Consistent Relationship Between the Tunnel Magnetoresistance of CoFeB/MgO/CoFeB Junctions and X-Ray Diffraction Properties
We have investigated the effect of Ar pressure during MgO sputtering on the tunnel magnetoresistance (TMR) and resistance area (RA) product of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs). The TMR of MTJs with a thin MgO tunnel barrier deposited at different Ar pressures (1.3, 4, 10, and 25 mTor...
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| Veröffentlicht in: | IEEE transactions on magnetics 2009-06, Vol.45 (6), p.2393-2395 |
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| creator | SHIN, Il-Jae MIN, Byoung-Chul HONG, Jin-Pyo SHIN, Kyung-Ho |
| description | We have investigated the effect of Ar pressure during MgO sputtering on the tunnel magnetoresistance (TMR) and resistance area (RA) product of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs). The TMR of MTJs with a thin MgO tunnel barrier deposited at different Ar pressures (1.3, 4, 10, and 25 mTorr) shows a consistent relationship with X-ray diffraction (XRD) properties of thick MgO films deposited with the same conditions. The deposition of the MgO-barrier at 1.3 mTorr results in a low TMR ratio and a high RA product due to the disordered MgO barrier and the oxidation of the bottom electrode of the MTJ, while the deposition at 25 mTorr results in a rough MgO barrier, and thereby gives rise to a large shift of switching field of the free layer due to the orange-peel coupling. |
| doi_str_mv | 10.1109/TMAG.2009.2018585 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_journals_856917608</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4957752</ieee_id><sourcerecordid>34482289</sourcerecordid><originalsourceid>FETCH-LOGICAL-c385t-8f2d68210352b421f0a7e0ac2d5de3fe1e5ba6992d81e1f7a082c6ce5cd55b7c3</originalsourceid><addsrcrecordid>eNp9kV9vFCEUxYnRxLX6AYwvxET7NF1gYAYe29VWTTc1zZr4Rljm0tJMYQtMTPvpZf-kDz74AtzL75zk3oPQe0pOKCVqvlqeXpwwQlQ9qBRSvEAzqjhtCOnUSzQjtdso3vHX6E3Od7XkgpIZelrEkH0uEAq-htEUX-tbv8FnUP4ABFxuAa-mEGDES3MToMQEW4EJFnB0eBHP4Wy-vLma7174xxTszgSbMODfzbV5xF-8c8ns2vhnihtIxUN-i145M2Z4d7iP0K_zr6vFt-by6uL74vSysa0UpZGODZ1klLSCrTmjjpgeiLFsEAO0DiiItemUYoOkQF1viGS2syDsIMS6t-0ROt77blJ8mCAXfe-zhXE0AeKUteyU5KxnfSU__5dsOZeMSVXBj_-Ad3FKoU6hpegU7TsiK0T3kE0x5wROb5K_N-lRU6K3oeltaHobmj6EVjWfDsYmWzPWrQXr87OQUdVKtuM-7DkPAM_fXIm-F6z9CxVHoHU</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>856917608</pqid></control><display><type>article</type><title>Consistent Relationship Between the Tunnel Magnetoresistance of CoFeB/MgO/CoFeB Junctions and X-Ray Diffraction Properties</title><source>IEEE Electronic Library (IEL)</source><creator>SHIN, Il-Jae ; MIN, Byoung-Chul ; HONG, Jin-Pyo ; SHIN, Kyung-Ho</creator><creatorcontrib>SHIN, Il-Jae ; MIN, Byoung-Chul ; HONG, Jin-Pyo ; SHIN, Kyung-Ho</creatorcontrib><description>We have investigated the effect of Ar pressure during MgO sputtering on the tunnel magnetoresistance (TMR) and resistance area (RA) product of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs). The TMR of MTJs with a thin MgO tunnel barrier deposited at different Ar pressures (1.3, 4, 10, and 25 mTorr) shows a consistent relationship with X-ray diffraction (XRD) properties of thick MgO films deposited with the same conditions. The deposition of the MgO-barrier at 1.3 mTorr results in a low TMR ratio and a high RA product due to the disordered MgO barrier and the oxidation of the bottom electrode of the MTJ, while the deposition at 25 mTorr results in a rough MgO barrier, and thereby gives rise to a large shift of switching field of the free layer due to the orange-peel coupling.</description><identifier>ISSN: 0018-9464</identifier><identifier>EISSN: 1941-0069</identifier><identifier>DOI: 10.1109/TMAG.2009.2018585</identifier><identifier>CODEN: IEMGAQ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Argon ; Barriers ; Cross-disciplinary physics: materials science; rheology ; Deposition ; Diffraction ; Electrodes ; Exact sciences and technology ; Magnesium oxide ; Magnetic films ; Magnetic properties ; Magnetic tunnel junction ; Magnetic tunneling ; Magnetism ; Materials science ; Metals. Metallurgy ; MgO ; Other topics in materials science ; Oxidation ; Physics ; Production techniques ; rf sputtering ; Sputtering ; Surface treatment ; Tunnel junctions ; Tunnel magnetoresistance ; Tunneling magnetoresistance ; X-ray diffraction ; X-ray scattering ; X-rays</subject><ispartof>IEEE transactions on magnetics, 2009-06, Vol.45 (6), p.2393-2395</ispartof><rights>2009 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2009</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-8f2d68210352b421f0a7e0ac2d5de3fe1e5ba6992d81e1f7a082c6ce5cd55b7c3</citedby><cites>FETCH-LOGICAL-c385t-8f2d68210352b421f0a7e0ac2d5de3fe1e5ba6992d81e1f7a082c6ce5cd55b7c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4957752$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,792,23909,23910,25118,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4957752$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21938285$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>SHIN, Il-Jae</creatorcontrib><creatorcontrib>MIN, Byoung-Chul</creatorcontrib><creatorcontrib>HONG, Jin-Pyo</creatorcontrib><creatorcontrib>SHIN, Kyung-Ho</creatorcontrib><title>Consistent Relationship Between the Tunnel Magnetoresistance of CoFeB/MgO/CoFeB Junctions and X-Ray Diffraction Properties</title><title>IEEE transactions on magnetics</title><addtitle>TMAG</addtitle><description>We have investigated the effect of Ar pressure during MgO sputtering on the tunnel magnetoresistance (TMR) and resistance area (RA) product of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs). The TMR of MTJs with a thin MgO tunnel barrier deposited at different Ar pressures (1.3, 4, 10, and 25 mTorr) shows a consistent relationship with X-ray diffraction (XRD) properties of thick MgO films deposited with the same conditions. The deposition of the MgO-barrier at 1.3 mTorr results in a low TMR ratio and a high RA product due to the disordered MgO barrier and the oxidation of the bottom electrode of the MTJ, while the deposition at 25 mTorr results in a rough MgO barrier, and thereby gives rise to a large shift of switching field of the free layer due to the orange-peel coupling.</description><subject>Applied sciences</subject><subject>Argon</subject><subject>Barriers</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Deposition</subject><subject>Diffraction</subject><subject>Electrodes</subject><subject>Exact sciences and technology</subject><subject>Magnesium oxide</subject><subject>Magnetic films</subject><subject>Magnetic properties</subject><subject>Magnetic tunnel junction</subject><subject>Magnetic tunneling</subject><subject>Magnetism</subject><subject>Materials science</subject><subject>Metals. Metallurgy</subject><subject>MgO</subject><subject>Other topics in materials science</subject><subject>Oxidation</subject><subject>Physics</subject><subject>Production techniques</subject><subject>rf sputtering</subject><subject>Sputtering</subject><subject>Surface treatment</subject><subject>Tunnel junctions</subject><subject>Tunnel magnetoresistance</subject><subject>Tunneling magnetoresistance</subject><subject>X-ray diffraction</subject><subject>X-ray scattering</subject><subject>X-rays</subject><issn>0018-9464</issn><issn>1941-0069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kV9vFCEUxYnRxLX6AYwvxET7NF1gYAYe29VWTTc1zZr4Rljm0tJMYQtMTPvpZf-kDz74AtzL75zk3oPQe0pOKCVqvlqeXpwwQlQ9qBRSvEAzqjhtCOnUSzQjtdso3vHX6E3Od7XkgpIZelrEkH0uEAq-htEUX-tbv8FnUP4ABFxuAa-mEGDES3MToMQEW4EJFnB0eBHP4Wy-vLma7174xxTszgSbMODfzbV5xF-8c8ns2vhnihtIxUN-i145M2Z4d7iP0K_zr6vFt-by6uL74vSysa0UpZGODZ1klLSCrTmjjpgeiLFsEAO0DiiItemUYoOkQF1viGS2syDsIMS6t-0ROt77blJ8mCAXfe-zhXE0AeKUteyU5KxnfSU__5dsOZeMSVXBj_-Ad3FKoU6hpegU7TsiK0T3kE0x5wROb5K_N-lRU6K3oeltaHobmj6EVjWfDsYmWzPWrQXr87OQUdVKtuM-7DkPAM_fXIm-F6z9CxVHoHU</recordid><startdate>20090601</startdate><enddate>20090601</enddate><creator>SHIN, Il-Jae</creator><creator>MIN, Byoung-Chul</creator><creator>HONG, Jin-Pyo</creator><creator>SHIN, Kyung-Ho</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope><scope>7QF</scope></search><sort><creationdate>20090601</creationdate><title>Consistent Relationship Between the Tunnel Magnetoresistance of CoFeB/MgO/CoFeB Junctions and X-Ray Diffraction Properties</title><author>SHIN, Il-Jae ; MIN, Byoung-Chul ; HONG, Jin-Pyo ; SHIN, Kyung-Ho</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c385t-8f2d68210352b421f0a7e0ac2d5de3fe1e5ba6992d81e1f7a082c6ce5cd55b7c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Applied sciences</topic><topic>Argon</topic><topic>Barriers</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Deposition</topic><topic>Diffraction</topic><topic>Electrodes</topic><topic>Exact sciences and technology</topic><topic>Magnesium oxide</topic><topic>Magnetic films</topic><topic>Magnetic properties</topic><topic>Magnetic tunnel junction</topic><topic>Magnetic tunneling</topic><topic>Magnetism</topic><topic>Materials science</topic><topic>Metals. Metallurgy</topic><topic>MgO</topic><topic>Other topics in materials science</topic><topic>Oxidation</topic><topic>Physics</topic><topic>Production techniques</topic><topic>rf sputtering</topic><topic>Sputtering</topic><topic>Surface treatment</topic><topic>Tunnel junctions</topic><topic>Tunnel magnetoresistance</topic><topic>Tunneling magnetoresistance</topic><topic>X-ray diffraction</topic><topic>X-ray scattering</topic><topic>X-rays</topic><toplevel>online_resources</toplevel><creatorcontrib>SHIN, Il-Jae</creatorcontrib><creatorcontrib>MIN, Byoung-Chul</creatorcontrib><creatorcontrib>HONG, Jin-Pyo</creatorcontrib><creatorcontrib>SHIN, Kyung-Ho</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Aluminium Industry Abstracts</collection><jtitle>IEEE transactions on magnetics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SHIN, Il-Jae</au><au>MIN, Byoung-Chul</au><au>HONG, Jin-Pyo</au><au>SHIN, Kyung-Ho</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Consistent Relationship Between the Tunnel Magnetoresistance of CoFeB/MgO/CoFeB Junctions and X-Ray Diffraction Properties</atitle><jtitle>IEEE transactions on magnetics</jtitle><stitle>TMAG</stitle><date>2009-06-01</date><risdate>2009</risdate><volume>45</volume><issue>6</issue><spage>2393</spage><epage>2395</epage><pages>2393-2395</pages><issn>0018-9464</issn><eissn>1941-0069</eissn><coden>IEMGAQ</coden><abstract>We have investigated the effect of Ar pressure during MgO sputtering on the tunnel magnetoresistance (TMR) and resistance area (RA) product of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs). The TMR of MTJs with a thin MgO tunnel barrier deposited at different Ar pressures (1.3, 4, 10, and 25 mTorr) shows a consistent relationship with X-ray diffraction (XRD) properties of thick MgO films deposited with the same conditions. The deposition of the MgO-barrier at 1.3 mTorr results in a low TMR ratio and a high RA product due to the disordered MgO barrier and the oxidation of the bottom electrode of the MTJ, while the deposition at 25 mTorr results in a rough MgO barrier, and thereby gives rise to a large shift of switching field of the free layer due to the orange-peel coupling.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMAG.2009.2018585</doi><tpages>3</tpages></addata></record> |
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| subjects | Applied sciences Argon Barriers Cross-disciplinary physics: materials science rheology Deposition Diffraction Electrodes Exact sciences and technology Magnesium oxide Magnetic films Magnetic properties Magnetic tunnel junction Magnetic tunneling Magnetism Materials science Metals. Metallurgy MgO Other topics in materials science Oxidation Physics Production techniques rf sputtering Sputtering Surface treatment Tunnel junctions Tunnel magnetoresistance Tunneling magnetoresistance X-ray diffraction X-ray scattering X-rays |
| title | Consistent Relationship Between the Tunnel Magnetoresistance of CoFeB/MgO/CoFeB Junctions and X-Ray Diffraction Properties |
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