A [Formula Omitted]-Band Planar Active Integrated Bi-Directional Switching Heat Applicator With Uniform Heating Profile

The active source module implemented with GaAs-based multichip monolithic microwave integrated circuits delivers 1.4 W at 20 GHz into the co-integrated planar applicator, which has three planar coaxial apertures on each side for wide-area bi-directional hyperthermia.

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 2009-10, Vol.57 (10), p.2581
Hauptverfasser: Dongki Kim, Dongki Kim, Kihyun Kim, Kihyun Kim, Jungmin Oh, Jungmin Oh, Jeiwon Cho, Jeiwon Cho, Changyul Cheon, Changyul Cheon, Youngwoo Kwon, Youngwoo Kwon
Format: Artikel
Sprache:eng
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Zusammenfassung:The active source module implemented with GaAs-based multichip monolithic microwave integrated circuits delivers 1.4 W at 20 GHz into the co-integrated planar applicator, which has three planar coaxial apertures on each side for wide-area bi-directional hyperthermia.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2009.2029748