A [Formula Omitted]-Band Planar Active Integrated Bi-Directional Switching Heat Applicator With Uniform Heating Profile
The active source module implemented with GaAs-based multichip monolithic microwave integrated circuits delivers 1.4 W at 20 GHz into the co-integrated planar applicator, which has three planar coaxial apertures on each side for wide-area bi-directional hyperthermia.
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Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2009-10, Vol.57 (10), p.2581 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The active source module implemented with GaAs-based multichip monolithic microwave integrated circuits delivers 1.4 W at 20 GHz into the co-integrated planar applicator, which has three planar coaxial apertures on each side for wide-area bi-directional hyperthermia. |
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ISSN: | 0018-9480 1557-9670 |
DOI: | 10.1109/TMTT.2009.2029748 |