Effect of Growth Temperature on InP QD Lasers

We describe the effect of growth temperature on the optical absorption, gain, and threshold current density of 730-nm emitting, metal-organic vapor phase epitaxy (MOVPE) grown, InP-AlGaInP quantum-dot lasers. Decreasing the growth temperature from 750°C to 690°C leads to an increase in ground state...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE photonics technology letters 2010-01, Vol.22 (2), p.88-90
Hauptverfasser:	Smowton, P.M., Al-Ghamdi, M.S., Shutts, S., Edwards, G., Hutchings, M., Krysa, A.B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Biomedical optical imaging Conferences Density Epitaxial growth Fiber optics Gain Indium phosphide Land surface temperature Laser modes Lasers Optical fibers Optical sensors Quantum dot lasers Quantum dots semiconductor laser Semiconductor lasers semiconductor materials Stimulated emission Threshold current Threshold currents Vapor phase epitaxy
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	We describe the effect of growth temperature on the optical absorption, gain, and threshold current density of 730-nm emitting, metal-organic vapor phase epitaxy (MOVPE) grown, InP-AlGaInP quantum-dot lasers. Decreasing the growth temperature from 750°C to 690°C leads to an increase in ground state absorption, while sufficient optical gain and low 300 K threshold current density is obtained in the growth temperature window between 710°C and 730°C . Wider (16 nm compared to 8 nm) interlayer barriers lead to lower threshold current density with 300 K values as low as 165 Acm -2 for 2-mm-long lasers with uncoated facets.
ISSN:	1041-1135 1941-0174
DOI:	10.1109/LPT.2009.2036245