Detection and Localization of Defects in Monocrystalline Silicon Solar Cell

Near-surface defects in solar cell wafer have undesirable influence upon device properties, as its efficiency and lifetime. When reverse-bias voltage is applied to the wafer, a magnitude of electric signals from defects can be measured electronically, but the localization of defects is difficult usi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Advances in optical technologies 2010, Vol.2010 (2010), p.1-5
Hauptverfasser: Tománek, P., Škarvada, P., Macků, R., Grmela, L.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 5
container_issue 2010
container_start_page 1
container_title Advances in optical technologies
container_volume 2010
creator Tománek, P.
Škarvada, P.
Macků, R.
Grmela, L.
description Near-surface defects in solar cell wafer have undesirable influence upon device properties, as its efficiency and lifetime. When reverse-bias voltage is applied to the wafer, a magnitude of electric signals from defects can be measured electronically, but the localization of defects is difficult using classical optical far-field methods. Therefore, the paper introduces a novel combination of electric and optical methods showing promise of being useful in detection and localization of defects with resolution of 250 nm using near-field nondestructive characterization techniques. The results of mapped topography, local surface reflection, and local light to electric energy conversion measurement in areas with small defects strongly support the development and further evaluation of the technique.
doi_str_mv 10.1155/2010/805325
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_855522870</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2285097621</sourcerecordid><originalsourceid>FETCH-LOGICAL-a3795-ea66ef84244a53168a37e446c83ad36b20a9e981be0d91a42864e50ebf4689e23</originalsourceid><addsrcrecordid>eNqF0EtLAzEUBeAgCtbqyrUwuFRG855kKa0vrLiorkM6cwdT4qQmU6T-elNH3brK5dyPJByEjgm-IESIS4oJvlRYMCp20IhIVZWS42r3d2aa7aODlJYYS6qJHKGHKfRQ9y50he2aYhZq692n_Q5CW0yhzdtUuK54DF2o4yb11nvXQTF33tVZzYO3sZiA94dor7U-wdHPOUYvN9fPk7ty9nR7P7malZZVWpRgpYRWccq5FSx_LMfAuawVsw2TC4qtBq3IAnCjieVUSQ4Cw6LlUmmgbIxOh3tXMbyvIfVmGdaxy08aJYSgVFU4o_MB1TGkFKE1q-jebNwYgs22LLMtywxlZX026FfXNfbD_YNPBgyZQGv_MNeaS8q-AM5ocUI</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>855522870</pqid></control><display><type>article</type><title>Detection and Localization of Defects in Monocrystalline Silicon Solar Cell</title><source>Wiley-Blackwell Open Access Collection</source><source>Alma/SFX Local Collection</source><source>EZB Electronic Journals Library</source><creator>Tománek, P. ; Škarvada, P. ; Macků, R. ; Grmela, L.</creator><contributor>Polyanskii, Peter V.</contributor><creatorcontrib>Tománek, P. ; Škarvada, P. ; Macků, R. ; Grmela, L. ; Polyanskii, Peter V.</creatorcontrib><description>Near-surface defects in solar cell wafer have undesirable influence upon device properties, as its efficiency and lifetime. When reverse-bias voltage is applied to the wafer, a magnitude of electric signals from defects can be measured electronically, but the localization of defects is difficult using classical optical far-field methods. Therefore, the paper introduces a novel combination of electric and optical methods showing promise of being useful in detection and localization of defects with resolution of 250 nm using near-field nondestructive characterization techniques. The results of mapped topography, local surface reflection, and local light to electric energy conversion measurement in areas with small defects strongly support the development and further evaluation of the technique.</description><identifier>ISSN: 1687-6393</identifier><identifier>EISSN: 1687-6407</identifier><identifier>DOI: 10.1155/2010/805325</identifier><language>eng</language><publisher>Cairo, Egypt: Hindawi Puplishing Corporation</publisher><subject>Efficiency ; Electric currents ; Electric noise ; Electric properties ; Light ; Methods ; Microscopy ; Photovoltaic cells ; Silicon wafers ; Solar energy</subject><ispartof>Advances in optical technologies, 2010, Vol.2010 (2010), p.1-5</ispartof><rights>Copyright © 2010</rights><rights>Copyright © 2010 P. Tománek et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a3795-ea66ef84244a53168a37e446c83ad36b20a9e981be0d91a42864e50ebf4689e23</citedby><cites>FETCH-LOGICAL-a3795-ea66ef84244a53168a37e446c83ad36b20a9e981be0d91a42864e50ebf4689e23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4024,27923,27924,27925</link.rule.ids></links><search><contributor>Polyanskii, Peter V.</contributor><creatorcontrib>Tománek, P.</creatorcontrib><creatorcontrib>Škarvada, P.</creatorcontrib><creatorcontrib>Macků, R.</creatorcontrib><creatorcontrib>Grmela, L.</creatorcontrib><title>Detection and Localization of Defects in Monocrystalline Silicon Solar Cell</title><title>Advances in optical technologies</title><description>Near-surface defects in solar cell wafer have undesirable influence upon device properties, as its efficiency and lifetime. When reverse-bias voltage is applied to the wafer, a magnitude of electric signals from defects can be measured electronically, but the localization of defects is difficult using classical optical far-field methods. Therefore, the paper introduces a novel combination of electric and optical methods showing promise of being useful in detection and localization of defects with resolution of 250 nm using near-field nondestructive characterization techniques. The results of mapped topography, local surface reflection, and local light to electric energy conversion measurement in areas with small defects strongly support the development and further evaluation of the technique.</description><subject>Efficiency</subject><subject>Electric currents</subject><subject>Electric noise</subject><subject>Electric properties</subject><subject>Light</subject><subject>Methods</subject><subject>Microscopy</subject><subject>Photovoltaic cells</subject><subject>Silicon wafers</subject><subject>Solar energy</subject><issn>1687-6393</issn><issn>1687-6407</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>RHX</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNqF0EtLAzEUBeAgCtbqyrUwuFRG855kKa0vrLiorkM6cwdT4qQmU6T-elNH3brK5dyPJByEjgm-IESIS4oJvlRYMCp20IhIVZWS42r3d2aa7aODlJYYS6qJHKGHKfRQ9y50he2aYhZq692n_Q5CW0yhzdtUuK54DF2o4yb11nvXQTF33tVZzYO3sZiA94dor7U-wdHPOUYvN9fPk7ty9nR7P7malZZVWpRgpYRWccq5FSx_LMfAuawVsw2TC4qtBq3IAnCjieVUSQ4Cw6LlUmmgbIxOh3tXMbyvIfVmGdaxy08aJYSgVFU4o_MB1TGkFKE1q-jebNwYgs22LLMtywxlZX026FfXNfbD_YNPBgyZQGv_MNeaS8q-AM5ocUI</recordid><startdate>2010</startdate><enddate>2010</enddate><creator>Tománek, P.</creator><creator>Škarvada, P.</creator><creator>Macků, R.</creator><creator>Grmela, L.</creator><general>Hindawi Puplishing Corporation</general><general>Hindawi Publishing Corporation</general><general>Hindawi Limited</general><scope>ADJCN</scope><scope>AHFXO</scope><scope>RHU</scope><scope>RHW</scope><scope>RHX</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>BHPHI</scope><scope>BKSAR</scope><scope>CCPQU</scope><scope>CWDGH</scope><scope>DWQXO</scope><scope>F1W</scope><scope>H96</scope><scope>HCIFZ</scope><scope>L.G</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PCBAR</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope></search><sort><creationdate>2010</creationdate><title>Detection and Localization of Defects in Monocrystalline Silicon Solar Cell</title><author>Tománek, P. ; Škarvada, P. ; Macků, R. ; Grmela, L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a3795-ea66ef84244a53168a37e446c83ad36b20a9e981be0d91a42864e50ebf4689e23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Efficiency</topic><topic>Electric currents</topic><topic>Electric noise</topic><topic>Electric properties</topic><topic>Light</topic><topic>Methods</topic><topic>Microscopy</topic><topic>Photovoltaic cells</topic><topic>Silicon wafers</topic><topic>Solar energy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tománek, P.</creatorcontrib><creatorcontrib>Škarvada, P.</creatorcontrib><creatorcontrib>Macků, R.</creatorcontrib><creatorcontrib>Grmela, L.</creatorcontrib><collection>الدوريات العلمية والإحصائية - e-Marefa Academic and Statistical Periodicals</collection><collection>معرفة - المحتوى العربي الأكاديمي المتكامل - e-Marefa Academic Complete</collection><collection>Hindawi Publishing Complete</collection><collection>Hindawi Publishing Subscription Journals</collection><collection>Hindawi Publishing Open Access Journals</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni)</collection><collection>ProQuest Central</collection><collection>Advanced Technologies &amp; Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>AUTh Library subscriptions: ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest Natural Science Collection</collection><collection>Earth, Atmospheric &amp; Aquatic Science Collection</collection><collection>ProQuest One Community College</collection><collection>Middle East &amp; Africa Database</collection><collection>ProQuest Central Korea</collection><collection>ASFA: Aquatic Sciences and Fisheries Abstracts</collection><collection>Aquatic Science &amp; Fisheries Abstracts (ASFA) 2: Ocean Technology, Policy &amp; Non-Living Resources</collection><collection>SciTech Premium Collection</collection><collection>Aquatic Science &amp; Fisheries Abstracts (ASFA) Professional</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies &amp; Aerospace Database</collection><collection>ProQuest Advanced Technologies &amp; Aerospace Collection</collection><collection>Earth, Atmospheric &amp; Aquatic Science Database</collection><collection>Access via ProQuest (Open Access)</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><jtitle>Advances in optical technologies</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tománek, P.</au><au>Škarvada, P.</au><au>Macků, R.</au><au>Grmela, L.</au><au>Polyanskii, Peter V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Detection and Localization of Defects in Monocrystalline Silicon Solar Cell</atitle><jtitle>Advances in optical technologies</jtitle><date>2010</date><risdate>2010</risdate><volume>2010</volume><issue>2010</issue><spage>1</spage><epage>5</epage><pages>1-5</pages><issn>1687-6393</issn><eissn>1687-6407</eissn><abstract>Near-surface defects in solar cell wafer have undesirable influence upon device properties, as its efficiency and lifetime. When reverse-bias voltage is applied to the wafer, a magnitude of electric signals from defects can be measured electronically, but the localization of defects is difficult using classical optical far-field methods. Therefore, the paper introduces a novel combination of electric and optical methods showing promise of being useful in detection and localization of defects with resolution of 250 nm using near-field nondestructive characterization techniques. The results of mapped topography, local surface reflection, and local light to electric energy conversion measurement in areas with small defects strongly support the development and further evaluation of the technique.</abstract><cop>Cairo, Egypt</cop><pub>Hindawi Puplishing Corporation</pub><doi>10.1155/2010/805325</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 1687-6393
ispartof Advances in optical technologies, 2010, Vol.2010 (2010), p.1-5
issn 1687-6393
1687-6407
language eng
recordid cdi_proquest_journals_855522870
source Wiley-Blackwell Open Access Collection; Alma/SFX Local Collection; EZB Electronic Journals Library
subjects Efficiency
Electric currents
Electric noise
Electric properties
Light
Methods
Microscopy
Photovoltaic cells
Silicon wafers
Solar energy
title Detection and Localization of Defects in Monocrystalline Silicon Solar Cell
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-03T19%3A14%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Detection%20and%20Localization%20of%20Defects%20in%20Monocrystalline%20Silicon%20Solar%20Cell&rft.jtitle=Advances%20in%20optical%20technologies&rft.au=Tom%C3%A1nek,%20P.&rft.date=2010&rft.volume=2010&rft.issue=2010&rft.spage=1&rft.epage=5&rft.pages=1-5&rft.issn=1687-6393&rft.eissn=1687-6407&rft_id=info:doi/10.1155/2010/805325&rft_dat=%3Cproquest_cross%3E2285097621%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=855522870&rft_id=info:pmid/&rfr_iscdi=true