Crystallization Behavior of the AgInSbTe Film
The sputtered films of Ag 4 3 In 6.2 Te 30.5 Sb 60 nominal composition subjected to the various laser powers treatment from the initializer are analyzed. The degree of crystallization of this sputtered film is significantly dependent on the laser powers. Extended X-ray absorption fine structure (EXA...
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| Veröffentlicht in: | IEEE transactions on magnetics 2011-03, Vol.47 (3), p.551-555 |
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| creator | Chen, Shi-Wei Yang, Chin-Tien Chiang, Donyau |
| description | The sputtered films of Ag 4 3 In 6.2 Te 30.5 Sb 60 nominal composition subjected to the various laser powers treatment from the initializer are analyzed. The degree of crystallization of this sputtered film is significantly dependent on the laser powers. Extended X-ray absorption fine structure (EXAFS) spectra indicate that, before initialization, the bonding distance between each element atom and the neighbor atoms maintains a fixed value roughly close to that in the crystal structure. It indicates the existence of short-range ordering in the amorphous structure of the film. The phase transformation of this alloy film can be processed just through a quite short displacement of atoms from the amorphous frame to the corresponding crystalline frame; consequently fast phase change is achieved. The discs of proper designed layer structure and initialization power treatment have excellent direct overwriting performance. |
| doi_str_mv | 10.1109/TMAG.2010.2098855 |
| format | Article |
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The degree of crystallization of this sputtered film is significantly dependent on the laser powers. Extended X-ray absorption fine structure (EXAFS) spectra indicate that, before initialization, the bonding distance between each element atom and the neighbor atoms maintains a fixed value roughly close to that in the crystal structure. It indicates the existence of short-range ordering in the amorphous structure of the film. The phase transformation of this alloy film can be processed just through a quite short displacement of atoms from the amorphous frame to the corresponding crystalline frame; consequently fast phase change is achieved. The discs of proper designed layer structure and initialization power treatment have excellent direct overwriting performance.</description><identifier>ISSN: 0018-9464</identifier><identifier>EISSN: 1941-0069</identifier><identifier>DOI: 10.1109/TMAG.2010.2098855</identifier><identifier>CODEN: IEMGAQ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Absorption ; AgInTeSb sputtered film ; Atomic structure ; Chemical bonds ; Crystal structure ; Crystallization ; direct overwriting ; Frames ; initialization power ; Jitter ; Lasers ; Magnetism ; Metals ; Order disorder ; Power lasers ; short-range ordering ; Sputtered films ; synchrotron light ; uncompleted crystallization phenomenon</subject><ispartof>IEEE transactions on magnetics, 2011-03, Vol.47 (3), p.551-555</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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The degree of crystallization of this sputtered film is significantly dependent on the laser powers. Extended X-ray absorption fine structure (EXAFS) spectra indicate that, before initialization, the bonding distance between each element atom and the neighbor atoms maintains a fixed value roughly close to that in the crystal structure. It indicates the existence of short-range ordering in the amorphous structure of the film. The phase transformation of this alloy film can be processed just through a quite short displacement of atoms from the amorphous frame to the corresponding crystalline frame; consequently fast phase change is achieved. The discs of proper designed layer structure and initialization power treatment have excellent direct overwriting performance.</description><subject>Absorption</subject><subject>AgInTeSb sputtered film</subject><subject>Atomic structure</subject><subject>Chemical bonds</subject><subject>Crystal structure</subject><subject>Crystallization</subject><subject>direct overwriting</subject><subject>Frames</subject><subject>initialization power</subject><subject>Jitter</subject><subject>Lasers</subject><subject>Magnetism</subject><subject>Metals</subject><subject>Order disorder</subject><subject>Power lasers</subject><subject>short-range ordering</subject><subject>Sputtered films</subject><subject>synchrotron light</subject><subject>uncompleted crystallization phenomenon</subject><issn>0018-9464</issn><issn>1941-0069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkE1Lw0AQhhdRsFZ_gHgJXjyl7nc2x1psLVQ8mPuym8zaLWm27qZC_fWmVDwIA8MLzzsMD0K3BE8IweVj9TpdTCgeIsWlUkKcoREpOckxluU5GmFMVF5yyS_RVUqbIXJB8Ajls3hIvWlb_216H7rsCdbmy4eYBZf1a8imH8vu3VaQzX27vUYXzrQJbn73GFXz52r2kq_eFsvZdJXXtJB9TpUgjAFT1hQOOC5oQ6WUDkxNiavd8JO1jjNZKqOKmjvmGrCcK9tQ2xg2Rg-ns7sYPveQer31qYa2NR2EfdJKck6FUHIg7_-Rm7CP3fCbVoLTgrJhxoicoDqGlCI4vYt-a-JBE6yP9vTRnj7a07_2hs7dqeMB4I8XBSWKYPYD4SFpvw</recordid><startdate>201103</startdate><enddate>201103</enddate><creator>Chen, Shi-Wei</creator><creator>Yang, Chin-Tien</creator><creator>Chiang, Donyau</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>201103</creationdate><title>Crystallization Behavior of the AgInSbTe Film</title><author>Chen, Shi-Wei ; Yang, Chin-Tien ; Chiang, Donyau</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c276t-285133e38ba7fe4072d2666feac21fcf006bbf43698a87c4f3fdeb448bd2bda3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Absorption</topic><topic>AgInTeSb sputtered film</topic><topic>Atomic structure</topic><topic>Chemical bonds</topic><topic>Crystal structure</topic><topic>Crystallization</topic><topic>direct overwriting</topic><topic>Frames</topic><topic>initialization power</topic><topic>Jitter</topic><topic>Lasers</topic><topic>Magnetism</topic><topic>Metals</topic><topic>Order disorder</topic><topic>Power lasers</topic><topic>short-range ordering</topic><topic>Sputtered films</topic><topic>synchrotron light</topic><topic>uncompleted crystallization phenomenon</topic><toplevel>online_resources</toplevel><creatorcontrib>Chen, Shi-Wei</creatorcontrib><creatorcontrib>Yang, Chin-Tien</creatorcontrib><creatorcontrib>Chiang, Donyau</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on magnetics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chen, Shi-Wei</au><au>Yang, Chin-Tien</au><au>Chiang, Donyau</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Crystallization Behavior of the AgInSbTe Film</atitle><jtitle>IEEE transactions on magnetics</jtitle><stitle>TMAG</stitle><date>2011-03</date><risdate>2011</risdate><volume>47</volume><issue>3</issue><spage>551</spage><epage>555</epage><pages>551-555</pages><issn>0018-9464</issn><eissn>1941-0069</eissn><coden>IEMGAQ</coden><abstract>The sputtered films of Ag 4 3 In 6.2 Te 30.5 Sb 60 nominal composition subjected to the various laser powers treatment from the initializer are analyzed. The degree of crystallization of this sputtered film is significantly dependent on the laser powers. Extended X-ray absorption fine structure (EXAFS) spectra indicate that, before initialization, the bonding distance between each element atom and the neighbor atoms maintains a fixed value roughly close to that in the crystal structure. It indicates the existence of short-range ordering in the amorphous structure of the film. The phase transformation of this alloy film can be processed just through a quite short displacement of atoms from the amorphous frame to the corresponding crystalline frame; consequently fast phase change is achieved. The discs of proper designed layer structure and initialization power treatment have excellent direct overwriting performance.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TMAG.2010.2098855</doi><tpages>5</tpages></addata></record> |
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| subjects | Absorption AgInTeSb sputtered film Atomic structure Chemical bonds Crystal structure Crystallization direct overwriting Frames initialization power Jitter Lasers Magnetism Metals Order disorder Power lasers short-range ordering Sputtered films synchrotron light uncompleted crystallization phenomenon |
| title | Crystallization Behavior of the AgInSbTe Film |
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