Compact High-Precision Models for Silicon p-n Step Junction Avalanche-Breakdown Voltages

Advanced silicon impact-ionization models are linked with simple accurate 1-D breakdown-voltage formulas for p-n step junctions. The models are useful for ab initio calculations and improve the accuracy of older models due to a new parameterization based on a numerical simulation. New parameters for...

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Veröffentlicht in:	IEEE transactions on electron devices 2011-03, Vol.58 (3), p.658-663
1. Verfasser:	Bauer, F D
Format:	Artikel
Sprache:	eng
Schlagworte:	Analytical models Applied sciences Breakdown Compound structure devices Computational modeling Data models Deviation Doping Electric potential Electronics Exact sciences and technology Impact-ionization coefficients Ionization Mathematical models Numerical models P-n junctions Parametrization Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor process modeling Silicon silicon p-n junction breakdown temperature dependence Voltage
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