Compact High-Precision Models for Silicon p-n Step Junction Avalanche-Breakdown Voltages
Advanced silicon impact-ionization models are linked with simple accurate 1-D breakdown-voltage formulas for p-n step junctions. The models are useful for ab initio calculations and improve the accuracy of older models due to a new parameterization based on a numerical simulation. New parameters for...
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| Veröffentlicht in: | IEEE transactions on electron devices 2011-03, Vol.58 (3), p.658-663 |
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| container_title | IEEE transactions on electron devices |
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| creator | Bauer, F D |
| description | Advanced silicon impact-ionization models are linked with simple accurate 1-D breakdown-voltage formulas for p-n step junctions. The models are useful for ab initio calculations and improve the accuracy of older models due to a new parameterization based on a numerical simulation. New parameters for effective impact-ionization coefficients are presented for Chynoweth and Fulop formulations. The parameter sets are based on impact-ionization models of Van Overstraeten and De Man and of the Universita di Bologna, including its recent updates. They allow quick computing of silicon p-n junction breakdown voltages from 10 V to 10 kV with maximum deviation from numerical data of ±5%. The new breakdown-voltage models account for the junction temperature and the depletion on both sides of the p-n junction. |
| doi_str_mv | 10.1109/TED.2010.2101077 |
| format | Article |
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The models are useful for ab initio calculations and improve the accuracy of older models due to a new parameterization based on a numerical simulation. New parameters for effective impact-ionization coefficients are presented for Chynoweth and Fulop formulations. The parameter sets are based on impact-ionization models of Van Overstraeten and De Man and of the Universita di Bologna, including its recent updates. They allow quick computing of silicon p-n junction breakdown voltages from 10 V to 10 kV with maximum deviation from numerical data of ±5%. The new breakdown-voltage models account for the junction temperature and the depletion on both sides of the p-n junction.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2010.2101077</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Analytical models ; Applied sciences ; Breakdown ; Compound structure devices ; Computational modeling ; Data models ; Deviation ; Doping ; Electric potential ; Electronics ; Exact sciences and technology ; Impact-ionization coefficients ; Ionization ; Mathematical models ; Numerical models ; P-n junctions ; Parametrization ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Semiconductor process modeling ; Silicon ; silicon p-n junction breakdown ; temperature dependence ; Voltage</subject><ispartof>IEEE transactions on electron devices, 2011-03, Vol.58 (3), p.658-663</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Mar 2011</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c352t-dd471bb1dee61727d4f08bd61b567471d0b8cb2262161878dc78fab5efbd27203</citedby><cites>FETCH-LOGICAL-c352t-dd471bb1dee61727d4f08bd61b567471d0b8cb2262161878dc78fab5efbd27203</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5699913$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27922,27923,54756</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5699913$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23938347$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Bauer, F D</creatorcontrib><title>Compact High-Precision Models for Silicon p-n Step Junction Avalanche-Breakdown Voltages</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>Advanced silicon impact-ionization models are linked with simple accurate 1-D breakdown-voltage formulas for p-n step junctions. The models are useful for ab initio calculations and improve the accuracy of older models due to a new parameterization based on a numerical simulation. New parameters for effective impact-ionization coefficients are presented for Chynoweth and Fulop formulations. The parameter sets are based on impact-ionization models of Van Overstraeten and De Man and of the Universita di Bologna, including its recent updates. They allow quick computing of silicon p-n junction breakdown voltages from 10 V to 10 kV with maximum deviation from numerical data of ±5%. The new breakdown-voltage models account for the junction temperature and the depletion on both sides of the p-n junction.</description><subject>Analytical models</subject><subject>Applied sciences</subject><subject>Breakdown</subject><subject>Compound structure devices</subject><subject>Computational modeling</subject><subject>Data models</subject><subject>Deviation</subject><subject>Doping</subject><subject>Electric potential</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Impact-ionization coefficients</subject><subject>Ionization</subject><subject>Mathematical models</subject><subject>Numerical models</subject><subject>P-n junctions</subject><subject>Parametrization</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductor process modeling</subject><subject>Silicon</subject><subject>silicon p-n junction breakdown</subject><subject>temperature dependence</subject><subject>Voltage</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkE1P3DAQQC1UJLZL70i9REgVp4DtxF_H7bItRYtaCYp6sxx7AoZsHOwsVf99He2KA5cZjefNaPwQOiH4nBCsLu5Wl-cU54qSHIU4QDPCmCgVr_kHNMOYyFJVsjpCH1N6yiWvazpDf5ZhMxg7Flf-4bH8FcH65ENf3AQHXSraEItb33mbn4ayL25HGIrrbW_HCVq8ms709hHKrxHMswt_--I-dKN5gHSMDlvTJfi0z3P0-9vqbnlVrn9-_7FcrEtbMTqWztWCNA1xAJwIKlzdYtk4ThrGRW453EjbUMop4UQK6ayQrWkYtI2jguJqjs52e4cYXraQRr3xyUKXD4OwTVpO_6SYqUyeviOfwjb2-TgtWUWZVIplCO8gG0NKEVo9RL8x8Z8mWE-idRatJ9F6LzqPfNnvNcmaro1ZiU9vc7SatNcT93nHeQB4azOulCJV9R9o0YVm</recordid><startdate>20110301</startdate><enddate>20110301</enddate><creator>Bauer, F D</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20110301</creationdate><title>Compact High-Precision Models for Silicon p-n Step Junction Avalanche-Breakdown Voltages</title><author>Bauer, F D</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c352t-dd471bb1dee61727d4f08bd61b567471d0b8cb2262161878dc78fab5efbd27203</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Analytical models</topic><topic>Applied sciences</topic><topic>Breakdown</topic><topic>Compound structure devices</topic><topic>Computational modeling</topic><topic>Data models</topic><topic>Deviation</topic><topic>Doping</topic><topic>Electric potential</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Impact-ionization coefficients</topic><topic>Ionization</topic><topic>Mathematical models</topic><topic>Numerical models</topic><topic>P-n junctions</topic><topic>Parametrization</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Semiconductor process modeling</topic><topic>Silicon</topic><topic>silicon p-n junction breakdown</topic><topic>temperature dependence</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bauer, F D</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bauer, F D</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Compact High-Precision Models for Silicon p-n Step Junction Avalanche-Breakdown Voltages</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2011-03-01</date><risdate>2011</risdate><volume>58</volume><issue>3</issue><spage>658</spage><epage>663</epage><pages>658-663</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Advanced silicon impact-ionization models are linked with simple accurate 1-D breakdown-voltage formulas for p-n step junctions. The models are useful for ab initio calculations and improve the accuracy of older models due to a new parameterization based on a numerical simulation. New parameters for effective impact-ionization coefficients are presented for Chynoweth and Fulop formulations. The parameter sets are based on impact-ionization models of Van Overstraeten and De Man and of the Universita di Bologna, including its recent updates. They allow quick computing of silicon p-n junction breakdown voltages from 10 V to 10 kV with maximum deviation from numerical data of ±5%. The new breakdown-voltage models account for the junction temperature and the depletion on both sides of the p-n junction.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2010.2101077</doi><tpages>6</tpages></addata></record> |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Analytical models Applied sciences Breakdown Compound structure devices Computational modeling Data models Deviation Doping Electric potential Electronics Exact sciences and technology Impact-ionization coefficients Ionization Mathematical models Numerical models P-n junctions Parametrization Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor process modeling Silicon silicon p-n junction breakdown temperature dependence Voltage |
| title | Compact High-Precision Models for Silicon p-n Step Junction Avalanche-Breakdown Voltages |
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