Predicted Performance Improvement of Auger-Suppressed HgCdTe Photodiodes and [Formula Omitted] Heterojunction Detectors
Infrared detectors require cryogenic operation to suppress dark current, which is typically limited by Auger processes in narrow-band-gap semiconductor materials. Device structures designed to reduce carrier density under nonequilibrium reverse-bias operation provide a means to suppress Auger genera...
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Veröffentlicht in: | IEEE transactions on electron devices 2011-02, Vol.58 (2), p.501 |
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