Anomalous Effect of Hydrogen Dilution on the Crystallinity of ICPCVD-Grown Silicon Thin Films at Very Low Temperature
The structural properties of Si thin films deposited by inductively coupled plasma chemical vapor deposition at 150°C and at different dilution ratios of H 2 to SiH 4 + H 2 were studied. The crystallinity and grain sizes of Si films decreased with increasing H dilution ratios and the onset of the t...
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| Veröffentlicht in: | Journal of electronic materials 2010, Vol.39 (1), p.39-42 |
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| creator | Letha, A.J. Chan, F.M. Hwang, H.L. |
| description | The structural properties of Si thin films deposited by inductively coupled plasma chemical vapor deposition at 150°C and at different dilution ratios of H
2
to SiH
4
+ H
2
were studied. The crystallinity and grain sizes of Si films decreased with increasing H dilution ratios and the onset of the transition from polycrystalline Si (poly-Si) to amorphous Si (
a
-Si) was observed at a 98% H dilution ratio. This is an anomalous effect compared with the effect of H dilution on the morphology of Si films grown by conventional plasma- enhanced chemical vapor deposition processes. At a 99% H dilution ratio, the morphology completely changed to the amorphous state. The influence of radiofrequency (RF) power on crystallinity was also studied and the quality of poly-Si was improved by increasing the RF power. |
| doi_str_mv | 10.1007/s11664-009-0963-4 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_499152308</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2059325231</sourcerecordid><originalsourceid>FETCH-LOGICAL-c345t-bdf7eca4b54a5b1f983df16e96ae9778f7ef110dfff8beb03cc8a4ed0385c60d3</originalsourceid><addsrcrecordid>eNp1kE1rGzEQhkVpoG7SH9CbCPSoVGN9ePcYNp9gSCBu6E1otVKisJZcSUvYfx8Zh_QUGJjDPPPO8CD0E-gZULr6nQGk5ITSltBWMsK_oAUIzgg08u9XtKBMAhFLJr6h7zm_UAoCGlig6TzErR7jlPGlc9YUHB2-mYcUn2zAF36cio8B1yrPFndpzkWPow--zHvytrvvHi_IdYqvAT_40ZtKbp59wFd-3GasC360acbr-Io3druzSZcp2RN05PSY7Y_3foz-XF1uuhuyvru-7c7XxDAuCukHt7JG815wLXpwbcMGB9K2Utt2tWrq1AHQwTnX9LanzJhGcztQ1ggj6cCO0ekhd5fiv8nmol7ilEI9qXjbQvVBmwrBATIp5pysU7vktzrNCqjay1UHuarKVXu5itedX-_BOhs9uqSD8fljcbkUwIXcc8sDl-soPNn0_4HPw98AlOmLDA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>499152308</pqid></control><display><type>article</type><title>Anomalous Effect of Hydrogen Dilution on the Crystallinity of ICPCVD-Grown Silicon Thin Films at Very Low Temperature</title><source>SpringerLink Journals - AutoHoldings</source><creator>Letha, A.J. ; Chan, F.M. ; Hwang, H.L.</creator><creatorcontrib>Letha, A.J. ; Chan, F.M. ; Hwang, H.L.</creatorcontrib><description>The structural properties of Si thin films deposited by inductively coupled plasma chemical vapor deposition at 150°C and at different dilution ratios of H
2
to SiH
4
+ H
2
were studied. The crystallinity and grain sizes of Si films decreased with increasing H dilution ratios and the onset of the transition from polycrystalline Si (poly-Si) to amorphous Si (
a
-Si) was observed at a 98% H dilution ratio. This is an anomalous effect compared with the effect of H dilution on the morphology of Si films grown by conventional plasma- enhanced chemical vapor deposition processes. At a 99% H dilution ratio, the morphology completely changed to the amorphous state. The influence of radiofrequency (RF) power on crystallinity was also studied and the quality of poly-Si was improved by increasing the RF power.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-009-0963-4</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemical vapor deposition ; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Chemistry and Materials Science ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Crystallization ; Dilution ; Electronics and Microelectronics ; Exact sciences and technology ; Hydrogen ; Instrumentation ; Low temperature physics ; Materials Science ; Methods of deposition of films and coatings; film growth and epitaxy ; Optical and Electronic Materials ; Physics ; Solid State Physics ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology ; Thin films</subject><ispartof>Journal of electronic materials, 2010, Vol.39 (1), p.39-42</ispartof><rights>TMS 2009</rights><rights>2015 INIST-CNRS</rights><rights>Copyright Minerals, Metals & Materials Society Jan 2010</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c345t-bdf7eca4b54a5b1f983df16e96ae9778f7ef110dfff8beb03cc8a4ed0385c60d3</citedby><cites>FETCH-LOGICAL-c345t-bdf7eca4b54a5b1f983df16e96ae9778f7ef110dfff8beb03cc8a4ed0385c60d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-009-0963-4$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-009-0963-4$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,4010,27900,27901,27902,41464,42533,51294</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22514564$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Letha, A.J.</creatorcontrib><creatorcontrib>Chan, F.M.</creatorcontrib><creatorcontrib>Hwang, H.L.</creatorcontrib><title>Anomalous Effect of Hydrogen Dilution on the Crystallinity of ICPCVD-Grown Silicon Thin Films at Very Low Temperature</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>The structural properties of Si thin films deposited by inductively coupled plasma chemical vapor deposition at 150°C and at different dilution ratios of H
2
to SiH
4
+ H
2
were studied. The crystallinity and grain sizes of Si films decreased with increasing H dilution ratios and the onset of the transition from polycrystalline Si (poly-Si) to amorphous Si (
a
-Si) was observed at a 98% H dilution ratio. This is an anomalous effect compared with the effect of H dilution on the morphology of Si films grown by conventional plasma- enhanced chemical vapor deposition processes. At a 99% H dilution ratio, the morphology completely changed to the amorphous state. The influence of radiofrequency (RF) power on crystallinity was also studied and the quality of poly-Si was improved by increasing the RF power.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemical vapor deposition</subject><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Chemistry and Materials Science</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Crystallization</subject><subject>Dilution</subject><subject>Electronics and Microelectronics</subject><subject>Exact sciences and technology</subject><subject>Hydrogen</subject><subject>Instrumentation</subject><subject>Low temperature physics</subject><subject>Materials Science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Optical and Electronic Materials</subject><subject>Physics</subject><subject>Solid State Physics</subject><subject>Structure and morphology; thickness</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><subject>Thin films</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>BENPR</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp1kE1rGzEQhkVpoG7SH9CbCPSoVGN9ePcYNp9gSCBu6E1otVKisJZcSUvYfx8Zh_QUGJjDPPPO8CD0E-gZULr6nQGk5ITSltBWMsK_oAUIzgg08u9XtKBMAhFLJr6h7zm_UAoCGlig6TzErR7jlPGlc9YUHB2-mYcUn2zAF36cio8B1yrPFndpzkWPow--zHvytrvvHi_IdYqvAT_40ZtKbp59wFd-3GasC360acbr-Io3druzSZcp2RN05PSY7Y_3foz-XF1uuhuyvru-7c7XxDAuCukHt7JG815wLXpwbcMGB9K2Utt2tWrq1AHQwTnX9LanzJhGcztQ1ggj6cCO0ekhd5fiv8nmol7ilEI9qXjbQvVBmwrBATIp5pysU7vktzrNCqjay1UHuarKVXu5itedX-_BOhs9uqSD8fljcbkUwIXcc8sDl-soPNn0_4HPw98AlOmLDA</recordid><startdate>2010</startdate><enddate>2010</enddate><creator>Letha, A.J.</creator><creator>Chan, F.M.</creator><creator>Hwang, H.L.</creator><general>Springer US</general><general>Springer</general><general>Springer Nature B.V</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope></search><sort><creationdate>2010</creationdate><title>Anomalous Effect of Hydrogen Dilution on the Crystallinity of ICPCVD-Grown Silicon Thin Films at Very Low Temperature</title><author>Letha, A.J. ; Chan, F.M. ; Hwang, H.L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c345t-bdf7eca4b54a5b1f983df16e96ae9778f7ef110dfff8beb03cc8a4ed0385c60d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Chemical vapor deposition</topic><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Chemistry and Materials Science</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Crystallization</topic><topic>Dilution</topic><topic>Electronics and Microelectronics</topic><topic>Exact sciences and technology</topic><topic>Hydrogen</topic><topic>Instrumentation</topic><topic>Low temperature physics</topic><topic>Materials Science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Optical and Electronic Materials</topic><topic>Physics</topic><topic>Solid State Physics</topic><topic>Structure and morphology; thickness</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Letha, A.J.</creatorcontrib><creatorcontrib>Chan, F.M.</creatorcontrib><creatorcontrib>Hwang, H.L.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Letha, A.J.</au><au>Chan, F.M.</au><au>Hwang, H.L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Anomalous Effect of Hydrogen Dilution on the Crystallinity of ICPCVD-Grown Silicon Thin Films at Very Low Temperature</atitle><jtitle>Journal of electronic materials</jtitle><stitle>Journal of Elec Materi</stitle><date>2010</date><risdate>2010</risdate><volume>39</volume><issue>1</issue><spage>39</spage><epage>42</epage><pages>39-42</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><coden>JECMA5</coden><abstract>The structural properties of Si thin films deposited by inductively coupled plasma chemical vapor deposition at 150°C and at different dilution ratios of H
2
to SiH
4
+ H
2
were studied. The crystallinity and grain sizes of Si films decreased with increasing H dilution ratios and the onset of the transition from polycrystalline Si (poly-Si) to amorphous Si (
a
-Si) was observed at a 98% H dilution ratio. This is an anomalous effect compared with the effect of H dilution on the morphology of Si films grown by conventional plasma- enhanced chemical vapor deposition processes. At a 99% H dilution ratio, the morphology completely changed to the amorphous state. The influence of radiofrequency (RF) power on crystallinity was also studied and the quality of poly-Si was improved by increasing the RF power.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s11664-009-0963-4</doi><tpages>4</tpages></addata></record> |
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| subjects | Characterization and Evaluation of Materials Chemical vapor deposition Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Chemistry and Materials Science Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Crystallization Dilution Electronics and Microelectronics Exact sciences and technology Hydrogen Instrumentation Low temperature physics Materials Science Methods of deposition of films and coatings film growth and epitaxy Optical and Electronic Materials Physics Solid State Physics Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Thin films |
| title | Anomalous Effect of Hydrogen Dilution on the Crystallinity of ICPCVD-Grown Silicon Thin Films at Very Low Temperature |
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