Deposition of Bismuth Telluride Thick Film by Solidification under Centrifugal Pressure

Bismuth telluride alloys—Bi 0.5 Sb 1.5 Te 3 and Bi 1.8 Sb 0.2 Te 3.33 Se 0.17 —have been deposited on polycrystalline zirconia via solidification under centrifugal pressure. The crystal growth under centrifugal pressure was a process in which the starting powders charged in the groove patterns of th...

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Veröffentlicht in:	Journal of electronic materials 2009-07, Vol.38 (7), p.1089-1092
Hauptverfasser:	Kinemuchi, Yoshiaki, Aoki, Tomohiro, Kaga, Hisashi, Okanoue, Kumi, Ishiguro, Hirohide, Watari, Koji
Format:	Artikel
Sprache:	eng
Schlagworte:	Alloys Characterization and Evaluation of Materials Chemistry and Materials Science Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Electronics and Microelectronics Exact sciences and technology Instrumentation Materials Science Methods of deposition of films and coatings film growth and epitaxy Optical and Electronic Materials Physics Pressure Solid State Physics Solidification Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thermoelectric effects Thin film structure and morphology
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