Graphene-based modulator using GST-phase change material on semi-ellipsoid slot waveguide configuration

A novel electro-absorption modulator (EAM) operating at the 1550 nm wavelength has been proposed, comprising graphene layers integrated with semi-ellipsoidal hafnium dioxide (HfO2) nanostructures embedded in a silicon dioxide (SiO2) substrate. This unique design offers several key advantages, includ...

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Veröffentlicht in:	Indian journal of physics 2025-02, Vol.99 (2), p.357-366
Hauptverfasser:	Dalvand, H., Nikoufard, M., Zangeneh, H. R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Antimony Chemical potential Electroabsorption modulators Ellipsoids Germanium Graphene Hafnium oxide Light modulation Nanostructure Narrowband Optimization Phase change materials Polarization Silicon dioxide Silicon substrates Tellurides Waveguides
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