Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatment

In this study, high-performance InAlN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) are fabricated using HfAlOx-based charge-trapping layer dielectric stack combined with in situ O3 treatment. A positive threshold voltage shift (ΔVTH) of 8.9 V is achieved due to th...

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Veröffentlicht in:	Applied physics letters 2025-01, Vol.126 (1)
Hauptverfasser:	Du, Fangzhou, Jiang, Yang, Wang, Peiran, Wen, Kangyao, Tang, Chuying, He, Jiaqi, Deng, Chenkai, Zhang, Yi, Li, Mujun, Wang, Xiaohui, Hu, Qiaoyu, Yu, Wenyue, Wang, Qing, Yu, HongYu
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Current leakage Dielectric breakdown Failure rates Gallium nitrides High electron mobility transistors Insulators Leakage current MIS (semiconductors) Performance enhancement Photoelectrons Semiconductor devices Threshold voltage Trapping X ray photoelectron spectroscopy
Online-Zugang:	Volltext
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