Modeling and Simulation of Quantum State Distribution in Graphene Nanoribbon GaN/InSb TFETs for High-Precision Biosensing Applications

This study examines graphene nanoribbon tunnel field-effect transistors utilizing GaN/InSb (GR-GaN/InSb TFETs) with novel doping profiles aimed at enhancing performance in nanoscale applications, specifically for sub-5 nm technology. This study employs quantum simulations grounded in the Non-Equilib...

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Veröffentlicht in:	Sensing and imaging 2024-12, Vol.26 (1), Article 4
Hauptverfasser:	Kumaran, V. N. Senthil, Venkatesh, M., Alqahtani, Abdulrahman Saad, Elshafie, Hashim, Parthasarathy, P., Mubarakali, Azath
Format:	Artikel
Sprache:	eng
Schlagworte:	Biomolecules Biosensors Charge density Current voltage characteristics Doping Electrical Engineering Engineering Field effect transistors Gallium nitrides Graphene Green's functions Imaging Indium antimonide Intermetallic compounds Leakage current Microwaves Modulation Nanoribbons Performance enhancement Radiology RF and Optical Engineering Semiconductor devices Work functions
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