Modeling and Simulation of Quantum State Distribution in Graphene Nanoribbon GaN/InSb TFETs for High-Precision Biosensing Applications
This study examines graphene nanoribbon tunnel field-effect transistors utilizing GaN/InSb (GR-GaN/InSb TFETs) with novel doping profiles aimed at enhancing performance in nanoscale applications, specifically for sub-5 nm technology. This study employs quantum simulations grounded in the Non-Equilib...
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| creator | Kumaran, V. N. Senthil Venkatesh, M. Alqahtani, Abdulrahman Saad Elshafie, Hashim Parthasarathy, P. Mubarakali, Azath |
| description | This study examines graphene nanoribbon tunnel field-effect transistors utilizing GaN/InSb (GR-GaN/InSb TFETs) with novel doping profiles aimed at enhancing performance in nanoscale applications, specifically for sub-5 nm technology. This study employs quantum simulations grounded in the Non-Equilibrium Green’s Function (NEGF) formalism to model the I-V characteristics, subthreshold swing, charge density, and I
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ratios of the proposed designs. The tailored doping profiles effectively mitigate direct source-to-drain tunneling, a significant challenge in ultra-scaled GR-GaN/InSb TFETs, while also reducing ambipolar behavior and enhancing metrics such as leakage current, switching speed, and energy efficiency. Additionally, this work explores double-gate GR-GaN/InSb TFETs with dielectric modulation for ultra-sensitive biomolecule sensing applications. The results indicate that these novel device architectures surpass traditional FET-based sensors regarding electrical performance and scalability. The proposed device utilizes dielectric and work function modulation techniques to enhance sensitivity and overall functionality, making it a promising candidate for low-power, high-performance biosensing applications. |
| doi_str_mv | 10.1007/s11220-024-00527-9 |
| format | Article |
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ON
/I
OFF
ratios of the proposed designs. The tailored doping profiles effectively mitigate direct source-to-drain tunneling, a significant challenge in ultra-scaled GR-GaN/InSb TFETs, while also reducing ambipolar behavior and enhancing metrics such as leakage current, switching speed, and energy efficiency. Additionally, this work explores double-gate GR-GaN/InSb TFETs with dielectric modulation for ultra-sensitive biomolecule sensing applications. The results indicate that these novel device architectures surpass traditional FET-based sensors regarding electrical performance and scalability. The proposed device utilizes dielectric and work function modulation techniques to enhance sensitivity and overall functionality, making it a promising candidate for low-power, high-performance biosensing applications.</description><identifier>ISSN: 1557-2072</identifier><identifier>ISSN: 1557-2064</identifier><identifier>EISSN: 1557-2072</identifier><identifier>DOI: 10.1007/s11220-024-00527-9</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Biomolecules ; Biosensors ; Charge density ; Current voltage characteristics ; Doping ; Electrical Engineering ; Engineering ; Field effect transistors ; Gallium nitrides ; Graphene ; Green's functions ; Imaging ; Indium antimonide ; Intermetallic compounds ; Leakage current ; Microwaves ; Modulation ; Nanoribbons ; Performance enhancement ; Radiology ; RF and Optical Engineering ; Semiconductor devices ; Work functions</subject><ispartof>Sensing and imaging, 2024-12, Vol.26 (1), Article 4</ispartof><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2024 Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</rights><rights>Copyright Springer Nature B.V. 2024</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c200t-1959e3b11b68abb11971f2212bbeefcddf285f47d9257c43d87a7bce78ec4d8f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11220-024-00527-9$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11220-024-00527-9$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Kumaran, V. N. Senthil</creatorcontrib><creatorcontrib>Venkatesh, M.</creatorcontrib><creatorcontrib>Alqahtani, Abdulrahman Saad</creatorcontrib><creatorcontrib>Elshafie, Hashim</creatorcontrib><creatorcontrib>Parthasarathy, P.</creatorcontrib><creatorcontrib>Mubarakali, Azath</creatorcontrib><title>Modeling and Simulation of Quantum State Distribution in Graphene Nanoribbon GaN/InSb TFETs for High-Precision Biosensing Applications</title><title>Sensing and imaging</title><addtitle>Sens Imaging</addtitle><description>This study examines graphene nanoribbon tunnel field-effect transistors utilizing GaN/InSb (GR-GaN/InSb TFETs) with novel doping profiles aimed at enhancing performance in nanoscale applications, specifically for sub-5 nm technology. This study employs quantum simulations grounded in the Non-Equilibrium Green’s Function (NEGF) formalism to model the I-V characteristics, subthreshold swing, charge density, and I
ON
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ratios of the proposed designs. The tailored doping profiles effectively mitigate direct source-to-drain tunneling, a significant challenge in ultra-scaled GR-GaN/InSb TFETs, while also reducing ambipolar behavior and enhancing metrics such as leakage current, switching speed, and energy efficiency. Additionally, this work explores double-gate GR-GaN/InSb TFETs with dielectric modulation for ultra-sensitive biomolecule sensing applications. The results indicate that these novel device architectures surpass traditional FET-based sensors regarding electrical performance and scalability. 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N. Senthil</creatorcontrib><creatorcontrib>Venkatesh, M.</creatorcontrib><creatorcontrib>Alqahtani, Abdulrahman Saad</creatorcontrib><creatorcontrib>Elshafie, Hashim</creatorcontrib><creatorcontrib>Parthasarathy, P.</creatorcontrib><creatorcontrib>Mubarakali, Azath</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Health & Medical Complete (Alumni)</collection><jtitle>Sensing and imaging</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kumaran, V. N. Senthil</au><au>Venkatesh, M.</au><au>Alqahtani, Abdulrahman Saad</au><au>Elshafie, Hashim</au><au>Parthasarathy, P.</au><au>Mubarakali, Azath</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Modeling and Simulation of Quantum State Distribution in Graphene Nanoribbon GaN/InSb TFETs for High-Precision Biosensing Applications</atitle><jtitle>Sensing and imaging</jtitle><stitle>Sens Imaging</stitle><date>2024-12-02</date><risdate>2024</risdate><volume>26</volume><issue>1</issue><artnum>4</artnum><issn>1557-2072</issn><issn>1557-2064</issn><eissn>1557-2072</eissn><abstract>This study examines graphene nanoribbon tunnel field-effect transistors utilizing GaN/InSb (GR-GaN/InSb TFETs) with novel doping profiles aimed at enhancing performance in nanoscale applications, specifically for sub-5 nm technology. This study employs quantum simulations grounded in the Non-Equilibrium Green’s Function (NEGF) formalism to model the I-V characteristics, subthreshold swing, charge density, and I
ON
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ratios of the proposed designs. The tailored doping profiles effectively mitigate direct source-to-drain tunneling, a significant challenge in ultra-scaled GR-GaN/InSb TFETs, while also reducing ambipolar behavior and enhancing metrics such as leakage current, switching speed, and energy efficiency. Additionally, this work explores double-gate GR-GaN/InSb TFETs with dielectric modulation for ultra-sensitive biomolecule sensing applications. The results indicate that these novel device architectures surpass traditional FET-based sensors regarding electrical performance and scalability. The proposed device utilizes dielectric and work function modulation techniques to enhance sensitivity and overall functionality, making it a promising candidate for low-power, high-performance biosensing applications.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11220-024-00527-9</doi></addata></record> |
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| subjects | Biomolecules Biosensors Charge density Current voltage characteristics Doping Electrical Engineering Engineering Field effect transistors Gallium nitrides Graphene Green's functions Imaging Indium antimonide Intermetallic compounds Leakage current Microwaves Modulation Nanoribbons Performance enhancement Radiology RF and Optical Engineering Semiconductor devices Work functions |
| title | Modeling and Simulation of Quantum State Distribution in Graphene Nanoribbon GaN/InSb TFETs for High-Precision Biosensing Applications |
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