Native Oxide Layer Role during Cryogenic‐Temperature Ion Implantations in Germanium

Herein, the structural properties and chemical composition of Ge samples implanted with tellurium at cryogenic temperatures are analyzed, focusing on the role of the native oxide. For germanium, cryogenic‐temperature implantation is a requirement to achieve hyperdoped impurity concentrations while s...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2024-12, Vol.221 (24), p.n/a
Hauptverfasser:	Caudevilla, Daniel, Pérez‐Zenteno, Francisco José, Duarte‐Cano, Sebastián, Algaidy, Sari, Benítez‐Fernández, Rafael, Godoy‐Pérez, Guilleromo, Olea, Javier, San Andrés, Enrique, García‐Hernansanz, Rodrigo, del Prado, Álvaro, Mártil, Ignacio, Pastor, David, García‐Hemme, Eric
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical composition cryogenic Cryogenic temperature Diffusion layers Germanium Germanium oxides hyperdoping Ion implantation ion implantations Laser beam melting Liquid nitrogen Room temperature Silicon substrates Tellurium Temperature
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