Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT

In this paper, we design and fabricate a Schottky-metal-insulator-semiconductor (MIS) cascode anode GaN lateral field-effect diode (CA-LFED) to achieve ultralow reverse leakage current ( I LEAK ). The device based on AlGaN/GaN high-electron-mobility-transistor (HEMT) includes a normally-off MIS-cont...

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Veröffentlicht in:	Science China. Information sciences 2025, Vol.68 (1), p.112403, Article 112403
Hauptverfasser:	Wang, Fangzhou, Gao, Changhong, Ding, Guojian, Yu, Cheng, Wang, Zhuocheng, Wang, Xiaohui, Feng, Qi, Yu, Ping, Zuo, Peng, Chen, Wanjun, Wang, Yang, Jia, Haiqiang, Chen, Hong, Zhang, Bo, Wang, Zeheng
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Computer Science Electric contacts Electric fields Gallium nitrides High electron mobility transistors Information Systems and Communication Service Insulators Leakage current MIS (semiconductors) Research Paper Semiconductor devices Voltage drop
Online-Zugang:	Volltext
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