Analysis of Random Discrete Dopants Embedded Nanowire Resonant Tunnelling Diodes for Generation of Physically Unclonable Functions

In this work, we have performed quantum mechanical simulations of current flow in double-barrier III-V (GaAs/AlGaAs) nanowire resonant tunneling diodes (RTDs). Our simulations are based on the non-equilibrium Green's function (NEGF) quantum transport formalism implemented within our in-house si...

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Veröffentlicht in:	IEEE transactions on nanotechnology 2024, Vol.23, p.815-821
Hauptverfasser:	Acharya, Pranav, Rezaei, Ali, Sengupta, Amretashis, Dutta, Tapas, Kumar, Naveen, Maciazek, Patryk, Asenov, Asen, Georgiev, Vihar
Format:	Artikel
Sprache:	eng
Schlagworte:	Dopants Electrons Formalism Gallium arsenide Green's function methods Green's functions Integrated circuit modeling Integrated simulation environment Mathematical models nano-electronics simulation software (NESS) Nanoscale devices Nanowires non-equilibrium Green's function (NEGF) Phonons physically unclonable functions (PUFs) Quantum confinement quantum device simulator Quantum mechanics Quantum transport Resonant tunneling Resonant tunneling devices resonant tunneling diodes (RTDs) Software Three-dimensional displays Tunnel diodes
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