A High Power Density Ku‐Band GaN Power Amplifier Based on Device‐Level Thermal Analysis

ABSTRACT This paper introduces a new design method for a high‐power density GaN MMIC amplifier operating in the Ku‐band. A thermal model to investigate the thermal distribution of power amplifiers is proposed to achieve optimal performance in terms of power density, chip size, and channel temperatur...

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Veröffentlicht in:	International journal of numerical modelling 2024-11, Vol.37 (6), p.n/a
Hauptverfasser:	Zhou, Jiuding, Yi, Chupeng, Liu, Wenliang, Lu, Yang, Ma, Xiaohua, Zhao, Yuanfu, Hao, Yue
Format:	Artikel
Sprache:	eng
Schlagworte:	Design analysis Design techniques Electric power distribution gallium nitride Gallium nitrides high power amplifier Ku‐band Layouts MMIC (circuits) Power amplifiers Pulse duration Thermal analysis Thermal coupling thermal resistance Thermal simulation
Online-Zugang:	Volltext
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