Effect of sintering temperature on doping with high content of Ce in Y3Al5O12
Y3Al5O12:Ce (YAG:Ce) is used as a yellow phosphor in combination with blue light emitting diodes (LEDs) in white LEDs. YAG crystals with a super-high content of Ce (SHYAGCe) and anomalous redshifts can be prepared using a polymerized complex method by employing low-temperature annealing prior to sin...
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| Veröffentlicht in: | Journal of the Ceramic Society of Japan 2024/11/01, Vol.132(11), pp.637-639 |
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| container_title | Journal of the Ceramic Society of Japan |
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| creator | Nakamura, Hitomi Akai, Tomoko |
| description | Y3Al5O12:Ce (YAG:Ce) is used as a yellow phosphor in combination with blue light emitting diodes (LEDs) in white LEDs. YAG crystals with a super-high content of Ce (SHYAGCe) and anomalous redshifts can be prepared using a polymerized complex method by employing low-temperature annealing prior to sintering. Low-temperature annealing at approximately 650–750 °C is essential for doping a high content of Ce in YAG. However, the effect of the sintering temperature on the formation of the crystal structure has not been investigated. In this paper, we study the effect of the sintering temperature on the crystal structure and luminescence property. A single phase of YAG crystals is formed only when sintering is performed at 1030–1080 °C. This implies that the sintering temperature affects the formation of SHYAGCe. |
| doi_str_mv | 10.2109/jcersj2.24083 |
| format | Article |
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YAG crystals with a super-high content of Ce (SHYAGCe) and anomalous redshifts can be prepared using a polymerized complex method by employing low-temperature annealing prior to sintering. Low-temperature annealing at approximately 650–750 °C is essential for doping a high content of Ce in YAG. However, the effect of the sintering temperature on the formation of the crystal structure has not been investigated. In this paper, we study the effect of the sintering temperature on the crystal structure and luminescence property. A single phase of YAG crystals is formed only when sintering is performed at 1030–1080 °C. 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This implies that the sintering temperature affects the formation of SHYAGCe.</description><subject>Annealing</subject><subject>Crystal structure</subject><subject>Doping</subject><subject>Light emitting diodes</subject><subject>Low temperature</subject><subject>Phosphor</subject><subject>Phosphors</subject><subject>Photoluminescence</subject><subject>Sintering</subject><subject>Sintering temperature</subject><subject>YAG</subject><subject>Yttrium-aluminum garnet</subject><issn>1882-0743</issn><issn>1348-6535</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNo90M9LwzAUB_AgCs7p0XvAc2d-LulxjE2FyS568BTS5mVt2dqaZIj_vV0nO4QXHp_3HnwReqRkxijJn5sSQmzYjAmi-RWaUC50NpdcXg9_rVlGlOC36C7GhpA5E1xP0PvKeygT7jyOdZsg1O0OJzj0EGw6BsBdi13Xn7o_dapwVe8qXHaDbMehJeC6xV98sZdbyu7Rjbf7CA__dYo-16uP5Wu22b68LRebrGSapAw89dZa4Yp54SxXXAplCSjnbF5Iqrzl0ivtGfdW-UKBdNKBJ1Ll4KymfIqeznv70H0fISbTdMfQDicNp0JImudMDyo7qzJ0MQbwpg_1wYZfQ4k5JWb-EzNjYoNfn30Tk93BRduQ6nIPF0358OhYxsELKCsbDLT8D0G2eLU</recordid><startdate>20241101</startdate><enddate>20241101</enddate><creator>Nakamura, Hitomi</creator><creator>Akai, Tomoko</creator><general>The Ceramic Society of Japan</general><general>Japan Science and Technology Agency</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20241101</creationdate><title>Effect of sintering temperature on doping with high content of Ce in Y3Al5O12</title><author>Nakamura, Hitomi ; Akai, Tomoko</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c280t-ef1faaa4db6bda373547a0e7dda9b517fa35f78f23fa7fb7e5d5def0579eda813</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Annealing</topic><topic>Crystal structure</topic><topic>Doping</topic><topic>Light emitting diodes</topic><topic>Low temperature</topic><topic>Phosphor</topic><topic>Phosphors</topic><topic>Photoluminescence</topic><topic>Sintering</topic><topic>Sintering temperature</topic><topic>YAG</topic><topic>Yttrium-aluminum garnet</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nakamura, Hitomi</creatorcontrib><creatorcontrib>Akai, Tomoko</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of the Ceramic Society of Japan</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nakamura, Hitomi</au><au>Akai, Tomoko</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of sintering temperature on doping with high content of Ce in Y3Al5O12</atitle><jtitle>Journal of the Ceramic Society of Japan</jtitle><addtitle>J. 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| ispartof | Journal of the Ceramic Society of Japan, 2024/11/01, Vol.132(11), pp.637-639 |
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| source | J-STAGE (Japan Science & Technology Information Aggregator, Electronic) Freely Available Titles - Japanese |
| subjects | Annealing Crystal structure Doping Light emitting diodes Low temperature Phosphor Phosphors Photoluminescence Sintering Sintering temperature YAG Yttrium-aluminum garnet |
| title | Effect of sintering temperature on doping with high content of Ce in Y3Al5O12 |
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