Band Alignment of AlN/InGaZnO Heterojunction for Thin-Film Transistor Application

Uncrystallized indium-gallium-zinc-oxide (InGaZnO) thin-film transistors (TFTs) combined with an aluminum nitride (AlN) dielectric have been used to promote performance and steadiness. However, the high deposition temperature of AlN films limits their application in InGaZnO flexible TFTs. In this wo...

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Veröffentlicht in:	Electronics (Basel) 2024-12, Vol.13 (23), p.4602
Hauptverfasser:	Zhang, Hongpeng, Huang, Tianli, Cao, Rongjun, Wang, Chen, Peng, Bo, Wu, Jibao, Wang, Shaochong, Zheng, Kunwei, Jia, Renxu, Zhang, Yuming, Zhang, Hongyi
Format:	Artikel
Sprache:	eng
Schlagworte:	Alignment Aluminum compounds Aluminum nitride Atomic layer epitaxy Conduction bands Dielectric films Electrons Energy Gallium Heterojunctions Indium Indium gallium zinc oxide Low temperature Magnetron sputtering Nitrides Photoelectric emission Semiconductor devices Spectrum analysis Temperature Thin film transistors Thin films Transistors Ultraviolet spectra Valence band Zinc oxide
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