Electrothermal enhancement of β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors via back-end-of-line sputter-deposited AlN layer

The electrothermal device performance of β-(Al0.21Ga0.79)2O3/Ga2O3 heterostructure field-effect transistors (HFETs) was enhanced by incorporating a 400 nm thick AlN capping layer via back-end-of-line room-temperature reactive sputter deposition. The AlN-capped HFETs demonstrated DC power densities &...

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Veröffentlicht in:	Journal of applied physics 2024-12, Vol.136 (22)
Hauptverfasser:	Lundh, James Spencer, Cress, Cory, Jacobs, Alan G., Cheng, Zhe, Masten, Hannah N., Spencer, Joseph A., Sasaki, Kohei, Gallagher, James, Koehler, Andrew D., Konishi, Keita, Graham, Samuel, Kuramata, Akito, Anderson, Travis J., Tadjer, Marko J., Hobart, Karl D., Mastro, Michael A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Capping Deposition Electric fields Electrical resistivity Field effect transistors Gallium oxides Heat conductivity Heat generation Heat transfer Heterostructures Performance evaluation Room temperature Semiconductor devices Substrates Thermal analysis Thermal conductivity Thermal resistance Thermal simulation Transistors
Online-Zugang:	Volltext
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