Spin Hall magnetic field sensing device using topological insulator
The “direct” spin Hall (DSH) effect has been intensively studied to manipulate the magnetic state in spin–orbit torque magnetic random access memory. Meanwhile, its reciprocal phenomenon, known as the “inverse” spin Hall (ISH) effect, has been studied as a method to read the magnetic state of a magn...
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| Veröffentlicht in: | Applied physics letters 2024-12, Vol.125 (24) |
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| container_title | Applied physics letters |
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| creator | Liu, Min Ruixian, Zhang Le, Quang York, Brian Hwang, Cherngye Liu, Xiaoyong Gribelyuk, Michael Xu, Xiaoyu Le, Son Maeda, Maki Fan, Tuo Tao, Yu Takano, Hisashi Hai, Pham Nam |
| description | The “direct” spin Hall (DSH) effect has been intensively studied to manipulate the magnetic state in spin–orbit torque magnetic random access memory. Meanwhile, its reciprocal phenomenon, known as the “inverse” spin Hall (ISH) effect, has been studied as a method to read the magnetic state of a magnetic element in a magnetic read head sensor and magnetoelectric spin–orbit logic device. This work studies a magnetic field sensing device structure in which the DSH effect is used for reading the magnetic state in a ferromagnetic (FM)/topological insulator (TI) heterostructure. We found that while the output of our DSH sensing device is consistent with that based on the ISH effect, the spin Hall angle calculated from its magnitude is colossal (θSH ∼ 164) and significantly higher than that (θSH ∼ 3.5) obtained from the second harmonic measurement. Our findings show that the giant DSH and ISH effects in TI-based heterostructures are useful for realizing next-generation magnetic read head device and have important implications for engineering topological quantum materials with high spin Hall performance. |
| doi_str_mv | 10.1063/5.0233246 |
| format | Article |
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Meanwhile, its reciprocal phenomenon, known as the “inverse” spin Hall (ISH) effect, has been studied as a method to read the magnetic state of a magnetic element in a magnetic read head sensor and magnetoelectric spin–orbit logic device. This work studies a magnetic field sensing device structure in which the DSH effect is used for reading the magnetic state in a ferromagnetic (FM)/topological insulator (TI) heterostructure. We found that while the output of our DSH sensing device is consistent with that based on the ISH effect, the spin Hall angle calculated from its magnitude is colossal (θSH ∼ 164) and significantly higher than that (θSH ∼ 3.5) obtained from the second harmonic measurement. Our findings show that the giant DSH and ISH effects in TI-based heterostructures are useful for realizing next-generation magnetic read head device and have important implications for engineering topological quantum materials with high spin Hall performance.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0233246</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Ferromagnetism ; Heterostructures ; Magnetic fields ; Random access memory ; Read heads ; Topological insulators</subject><ispartof>Applied physics letters, 2024-12, Vol.125 (24)</ispartof><rights>Author(s)</rights><rights>2024 Author(s). Published under an exclusive license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c226t-55cc804f01a56463a7f7602c3eaeb323a53d66f5295d92364533bbcd5b5cdbcb3</cites><orcidid>0000-0001-6710-4822 ; 0000-0002-6129-1169 ; 0000-0001-6685-4912 ; 0000-0003-4290-9928 ; 0000-0002-1298-2289 ; 0009-0001-6698-6912 ; 0000-0002-2661-8197 ; 0009-0002-2808-0498 ; 0000-0002-4991-5290 ; 0000-0003-4669-4282 ; 0000-0002-3969-0585</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/5.0233246$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4498,27901,27902,76127</link.rule.ids></links><search><creatorcontrib>Liu, Min</creatorcontrib><creatorcontrib>Ruixian, Zhang</creatorcontrib><creatorcontrib>Le, Quang</creatorcontrib><creatorcontrib>York, Brian</creatorcontrib><creatorcontrib>Hwang, Cherngye</creatorcontrib><creatorcontrib>Liu, Xiaoyong</creatorcontrib><creatorcontrib>Gribelyuk, Michael</creatorcontrib><creatorcontrib>Xu, Xiaoyu</creatorcontrib><creatorcontrib>Le, Son</creatorcontrib><creatorcontrib>Maeda, Maki</creatorcontrib><creatorcontrib>Fan, Tuo</creatorcontrib><creatorcontrib>Tao, Yu</creatorcontrib><creatorcontrib>Takano, Hisashi</creatorcontrib><creatorcontrib>Hai, Pham Nam</creatorcontrib><title>Spin Hall magnetic field sensing device using topological insulator</title><title>Applied physics letters</title><description>The “direct” spin Hall (DSH) effect has been intensively studied to manipulate the magnetic state in spin–orbit torque magnetic random access memory. 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| subjects | Ferromagnetism Heterostructures Magnetic fields Random access memory Read heads Topological insulators |
| title | Spin Hall magnetic field sensing device using topological insulator |
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