Charge transport properties of high-mobility indium-gallium-zinc oxide thin-film transistors fabricated through atomic-layer deposition

Atomic-layer deposition (ALD) is considered a promising method for the fabrication of high-quality indium-gallium-zinc oxide (IGZO) films because of its excellent film conformity and ability to suppress impurities. However, the charge transport properties of thin-film transistors (TFTs) with ALD-bas...

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Veröffentlicht in:	Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2024-12, Vol.12 (47), p.1971-1977
Hauptverfasser:	Park, Sang-Joon, Park, Se-Ryong, Na, Jong Mu, Jeon, Woo-Seok, Kang, Youngjin, Ham, Sukhun, Kim, Yong-Hoon, Chung, Yung-Bin, Ha, Tae-Jun
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic layer epitaxy Channels Charge transport Gallium Indium Indium gallium zinc oxide Semiconductor devices Sol-gel processes Temperature dependence Thin film transistors Threshold voltage Time dependence Time domain analysis Transient analysis Transistors Transport properties Zinc oxides
Online-Zugang:	Volltext
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