Charge transport properties of high-mobility indium-gallium-zinc oxide thin-film transistors fabricated through atomic-layer deposition
Atomic-layer deposition (ALD) is considered a promising method for the fabrication of high-quality indium-gallium-zinc oxide (IGZO) films because of its excellent film conformity and ability to suppress impurities. However, the charge transport properties of thin-film transistors (TFTs) with ALD-bas...
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| Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2024-12, Vol.12 (47), p.1971-1977 |
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| container_end_page | 1977 |
|---|---|
| container_issue | 47 |
| container_start_page | 1971 |
| container_title | Journal of materials chemistry. C, Materials for optical and electronic devices |
| container_volume | 12 |
| creator | Park, Sang-Joon Park, Se-Ryong Na, Jong Mu Jeon, Woo-Seok Kang, Youngjin Ham, Sukhun Kim, Yong-Hoon Chung, Yung-Bin Ha, Tae-Jun |
| description | Atomic-layer deposition (ALD) is considered a promising method for the fabrication of high-quality indium-gallium-zinc oxide (IGZO) films because of its excellent film conformity and ability to suppress impurities. However, the charge transport properties of thin-film transistors (TFTs) with ALD-based IGZO active channels do not align with existing multiple-trapping- and-release models. In this study, high-mobility TFTs, designed for low-voltage (5 V) operation, are developed with ALD-based IGZO channels, which exhibit a high field-effect mobility of 14 cm
2
V
−1
s
−1
, on/off ratio of 3.8 × 10
8
, threshold voltage of −0.5 V, and low subthreshold swing of 86 mV dec
−1
. The charge transport properties of IGZO TFTs fabricated through ALD are investigated by temperature-dependent mobility and time-domain transient analyses and compared with those of IGZO TFTs fabricated through sol-gel coating and sputtering using the same device configuration for the first time. The ALD-based IGZO TFT exhibits a signficantly lower activation energy and higher carrier velocity (3 meV and 9000 cm s
−1
, respectively) compared with those of the sol-gel-based IGZO TFT (65 meV and 2000 cm s
−1
) and sputter-based IGZO TFT (37 meV and 4000 cm s
−1
), which is ascribed to the enhanced metal-oxygen bonding states of the high-quality IGZO film and interfaces between the channel and dielectric layers.
Charge transport properties of indium-gallium-zinc oxide thin-film transistors fabricated by atomic-layer deposition are investigated through comparative analyses based on steady-state DC and time-domain transient measurements. |
| doi_str_mv | 10.1039/d4tc03560g |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_3140861485</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3140861485</sourcerecordid><originalsourceid>FETCH-LOGICAL-c170t-51f2dfb4f82968399ea5bd563be391b7c6b7a99a2ae2b1299463e140f29fc3b53</originalsourceid><addsrcrecordid>eNpFkUFLxDAQhYMouOhevAsBb0I0adq0OUrVVVjwsp5LkiZtlrapSQquf8C_bdeVdS5vDt-8Yd4AcEXwHcGU39dpVJhmDDcnYJHgDKM8o-npsU_YOViGsMVzFYQVjC_Ad9kK32gYvRjC6HyEo3ej9tHqAJ2BrW1a1DtpOxt30A61nXrUiK7b65cdFHSftp7nWzsgY7v-4GRDdD5AI6S3SkRdz4B3U9NCEV1vFerETntY69EFG60bLsGZEV3Qyz-9AO_PT5vyBa3fVq_lwxopkuOIMmKS2sjUFAlnBeVci0zWGaNSU05krpjMBeciETqRJOE8ZVSTFJuEG0VlRi_AzcF3PvNj0iFWWzf5YV5Z0ZkrGEmLPXV7oJR3IXhtqtHbXvhdRXC1z7p6TDflb9arGb4-wD6oI_f_C_oDd1d-wA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>3140861485</pqid></control><display><type>article</type><title>Charge transport properties of high-mobility indium-gallium-zinc oxide thin-film transistors fabricated through atomic-layer deposition</title><source>Royal Society Of Chemistry Journals 2008-</source><creator>Park, Sang-Joon ; Park, Se-Ryong ; Na, Jong Mu ; Jeon, Woo-Seok ; Kang, Youngjin ; Ham, Sukhun ; Kim, Yong-Hoon ; Chung, Yung-Bin ; Ha, Tae-Jun</creator><creatorcontrib>Park, Sang-Joon ; Park, Se-Ryong ; Na, Jong Mu ; Jeon, Woo-Seok ; Kang, Youngjin ; Ham, Sukhun ; Kim, Yong-Hoon ; Chung, Yung-Bin ; Ha, Tae-Jun</creatorcontrib><description>Atomic-layer deposition (ALD) is considered a promising method for the fabrication of high-quality indium-gallium-zinc oxide (IGZO) films because of its excellent film conformity and ability to suppress impurities. However, the charge transport properties of thin-film transistors (TFTs) with ALD-based IGZO active channels do not align with existing multiple-trapping- and-release models. In this study, high-mobility TFTs, designed for low-voltage (5 V) operation, are developed with ALD-based IGZO channels, which exhibit a high field-effect mobility of 14 cm
2
V
−1
s
−1
, on/off ratio of 3.8 × 10
8
, threshold voltage of −0.5 V, and low subthreshold swing of 86 mV dec
−1
. The charge transport properties of IGZO TFTs fabricated through ALD are investigated by temperature-dependent mobility and time-domain transient analyses and compared with those of IGZO TFTs fabricated through sol-gel coating and sputtering using the same device configuration for the first time. The ALD-based IGZO TFT exhibits a signficantly lower activation energy and higher carrier velocity (3 meV and 9000 cm s
−1
, respectively) compared with those of the sol-gel-based IGZO TFT (65 meV and 2000 cm s
−1
) and sputter-based IGZO TFT (37 meV and 4000 cm s
−1
), which is ascribed to the enhanced metal-oxygen bonding states of the high-quality IGZO film and interfaces between the channel and dielectric layers.
Charge transport properties of indium-gallium-zinc oxide thin-film transistors fabricated by atomic-layer deposition are investigated through comparative analyses based on steady-state DC and time-domain transient measurements.</description><identifier>ISSN: 2050-7526</identifier><identifier>EISSN: 2050-7534</identifier><identifier>DOI: 10.1039/d4tc03560g</identifier><language>eng</language><publisher>Cambridge: Royal Society of Chemistry</publisher><subject>Atomic layer epitaxy ; Channels ; Charge transport ; Gallium ; Indium ; Indium gallium zinc oxide ; Semiconductor devices ; Sol-gel processes ; Temperature dependence ; Thin film transistors ; Threshold voltage ; Time dependence ; Time domain analysis ; Transient analysis ; Transistors ; Transport properties ; Zinc oxides</subject><ispartof>Journal of materials chemistry. C, Materials for optical and electronic devices, 2024-12, Vol.12 (47), p.1971-1977</ispartof><rights>Copyright Royal Society of Chemistry 2024</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c170t-51f2dfb4f82968399ea5bd563be391b7c6b7a99a2ae2b1299463e140f29fc3b53</cites><orcidid>0000-0002-0935-795X ; 0000-0003-0057-1893</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Park, Sang-Joon</creatorcontrib><creatorcontrib>Park, Se-Ryong</creatorcontrib><creatorcontrib>Na, Jong Mu</creatorcontrib><creatorcontrib>Jeon, Woo-Seok</creatorcontrib><creatorcontrib>Kang, Youngjin</creatorcontrib><creatorcontrib>Ham, Sukhun</creatorcontrib><creatorcontrib>Kim, Yong-Hoon</creatorcontrib><creatorcontrib>Chung, Yung-Bin</creatorcontrib><creatorcontrib>Ha, Tae-Jun</creatorcontrib><title>Charge transport properties of high-mobility indium-gallium-zinc oxide thin-film transistors fabricated through atomic-layer deposition</title><title>Journal of materials chemistry. C, Materials for optical and electronic devices</title><description>Atomic-layer deposition (ALD) is considered a promising method for the fabrication of high-quality indium-gallium-zinc oxide (IGZO) films because of its excellent film conformity and ability to suppress impurities. However, the charge transport properties of thin-film transistors (TFTs) with ALD-based IGZO active channels do not align with existing multiple-trapping- and-release models. In this study, high-mobility TFTs, designed for low-voltage (5 V) operation, are developed with ALD-based IGZO channels, which exhibit a high field-effect mobility of 14 cm
2
V
−1
s
−1
, on/off ratio of 3.8 × 10
8
, threshold voltage of −0.5 V, and low subthreshold swing of 86 mV dec
−1
. The charge transport properties of IGZO TFTs fabricated through ALD are investigated by temperature-dependent mobility and time-domain transient analyses and compared with those of IGZO TFTs fabricated through sol-gel coating and sputtering using the same device configuration for the first time. The ALD-based IGZO TFT exhibits a signficantly lower activation energy and higher carrier velocity (3 meV and 9000 cm s
−1
, respectively) compared with those of the sol-gel-based IGZO TFT (65 meV and 2000 cm s
−1
) and sputter-based IGZO TFT (37 meV and 4000 cm s
−1
), which is ascribed to the enhanced metal-oxygen bonding states of the high-quality IGZO film and interfaces between the channel and dielectric layers.
Charge transport properties of indium-gallium-zinc oxide thin-film transistors fabricated by atomic-layer deposition are investigated through comparative analyses based on steady-state DC and time-domain transient measurements.</description><subject>Atomic layer epitaxy</subject><subject>Channels</subject><subject>Charge transport</subject><subject>Gallium</subject><subject>Indium</subject><subject>Indium gallium zinc oxide</subject><subject>Semiconductor devices</subject><subject>Sol-gel processes</subject><subject>Temperature dependence</subject><subject>Thin film transistors</subject><subject>Threshold voltage</subject><subject>Time dependence</subject><subject>Time domain analysis</subject><subject>Transient analysis</subject><subject>Transistors</subject><subject>Transport properties</subject><subject>Zinc oxides</subject><issn>2050-7526</issn><issn>2050-7534</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNpFkUFLxDAQhYMouOhevAsBb0I0adq0OUrVVVjwsp5LkiZtlrapSQquf8C_bdeVdS5vDt-8Yd4AcEXwHcGU39dpVJhmDDcnYJHgDKM8o-npsU_YOViGsMVzFYQVjC_Ad9kK32gYvRjC6HyEo3ej9tHqAJ2BrW1a1DtpOxt30A61nXrUiK7b65cdFHSftp7nWzsgY7v-4GRDdD5AI6S3SkRdz4B3U9NCEV1vFerETntY69EFG60bLsGZEV3Qyz-9AO_PT5vyBa3fVq_lwxopkuOIMmKS2sjUFAlnBeVci0zWGaNSU05krpjMBeciETqRJOE8ZVSTFJuEG0VlRi_AzcF3PvNj0iFWWzf5YV5Z0ZkrGEmLPXV7oJR3IXhtqtHbXvhdRXC1z7p6TDflb9arGb4-wD6oI_f_C_oDd1d-wA</recordid><startdate>20241205</startdate><enddate>20241205</enddate><creator>Park, Sang-Joon</creator><creator>Park, Se-Ryong</creator><creator>Na, Jong Mu</creator><creator>Jeon, Woo-Seok</creator><creator>Kang, Youngjin</creator><creator>Ham, Sukhun</creator><creator>Kim, Yong-Hoon</creator><creator>Chung, Yung-Bin</creator><creator>Ha, Tae-Jun</creator><general>Royal Society of Chemistry</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-0935-795X</orcidid><orcidid>https://orcid.org/0000-0003-0057-1893</orcidid></search><sort><creationdate>20241205</creationdate><title>Charge transport properties of high-mobility indium-gallium-zinc oxide thin-film transistors fabricated through atomic-layer deposition</title><author>Park, Sang-Joon ; Park, Se-Ryong ; Na, Jong Mu ; Jeon, Woo-Seok ; Kang, Youngjin ; Ham, Sukhun ; Kim, Yong-Hoon ; Chung, Yung-Bin ; Ha, Tae-Jun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c170t-51f2dfb4f82968399ea5bd563be391b7c6b7a99a2ae2b1299463e140f29fc3b53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Atomic layer epitaxy</topic><topic>Channels</topic><topic>Charge transport</topic><topic>Gallium</topic><topic>Indium</topic><topic>Indium gallium zinc oxide</topic><topic>Semiconductor devices</topic><topic>Sol-gel processes</topic><topic>Temperature dependence</topic><topic>Thin film transistors</topic><topic>Threshold voltage</topic><topic>Time dependence</topic><topic>Time domain analysis</topic><topic>Transient analysis</topic><topic>Transistors</topic><topic>Transport properties</topic><topic>Zinc oxides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, Sang-Joon</creatorcontrib><creatorcontrib>Park, Se-Ryong</creatorcontrib><creatorcontrib>Na, Jong Mu</creatorcontrib><creatorcontrib>Jeon, Woo-Seok</creatorcontrib><creatorcontrib>Kang, Youngjin</creatorcontrib><creatorcontrib>Ham, Sukhun</creatorcontrib><creatorcontrib>Kim, Yong-Hoon</creatorcontrib><creatorcontrib>Chung, Yung-Bin</creatorcontrib><creatorcontrib>Ha, Tae-Jun</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, Sang-Joon</au><au>Park, Se-Ryong</au><au>Na, Jong Mu</au><au>Jeon, Woo-Seok</au><au>Kang, Youngjin</au><au>Ham, Sukhun</au><au>Kim, Yong-Hoon</au><au>Chung, Yung-Bin</au><au>Ha, Tae-Jun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Charge transport properties of high-mobility indium-gallium-zinc oxide thin-film transistors fabricated through atomic-layer deposition</atitle><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle><date>2024-12-05</date><risdate>2024</risdate><volume>12</volume><issue>47</issue><spage>1971</spage><epage>1977</epage><pages>1971-1977</pages><issn>2050-7526</issn><eissn>2050-7534</eissn><abstract>Atomic-layer deposition (ALD) is considered a promising method for the fabrication of high-quality indium-gallium-zinc oxide (IGZO) films because of its excellent film conformity and ability to suppress impurities. However, the charge transport properties of thin-film transistors (TFTs) with ALD-based IGZO active channels do not align with existing multiple-trapping- and-release models. In this study, high-mobility TFTs, designed for low-voltage (5 V) operation, are developed with ALD-based IGZO channels, which exhibit a high field-effect mobility of 14 cm
2
V
−1
s
−1
, on/off ratio of 3.8 × 10
8
, threshold voltage of −0.5 V, and low subthreshold swing of 86 mV dec
−1
. The charge transport properties of IGZO TFTs fabricated through ALD are investigated by temperature-dependent mobility and time-domain transient analyses and compared with those of IGZO TFTs fabricated through sol-gel coating and sputtering using the same device configuration for the first time. The ALD-based IGZO TFT exhibits a signficantly lower activation energy and higher carrier velocity (3 meV and 9000 cm s
−1
, respectively) compared with those of the sol-gel-based IGZO TFT (65 meV and 2000 cm s
−1
) and sputter-based IGZO TFT (37 meV and 4000 cm s
−1
), which is ascribed to the enhanced metal-oxygen bonding states of the high-quality IGZO film and interfaces between the channel and dielectric layers.
Charge transport properties of indium-gallium-zinc oxide thin-film transistors fabricated by atomic-layer deposition are investigated through comparative analyses based on steady-state DC and time-domain transient measurements.</abstract><cop>Cambridge</cop><pub>Royal Society of Chemistry</pub><doi>10.1039/d4tc03560g</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0002-0935-795X</orcidid><orcidid>https://orcid.org/0000-0003-0057-1893</orcidid></addata></record> |
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| identifier | ISSN: 2050-7526 |
| ispartof | Journal of materials chemistry. C, Materials for optical and electronic devices, 2024-12, Vol.12 (47), p.1971-1977 |
| issn | 2050-7526 2050-7534 |
| language | eng |
| recordid | cdi_proquest_journals_3140861485 |
| source | Royal Society Of Chemistry Journals 2008- |
| subjects | Atomic layer epitaxy Channels Charge transport Gallium Indium Indium gallium zinc oxide Semiconductor devices Sol-gel processes Temperature dependence Thin film transistors Threshold voltage Time dependence Time domain analysis Transient analysis Transistors Transport properties Zinc oxides |
| title | Charge transport properties of high-mobility indium-gallium-zinc oxide thin-film transistors fabricated through atomic-layer deposition |
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