Impacts of p-AlGaN Electron Blocking Layer for the Performance of Low Current Injected Green GaN-Based Micro-LEDs

This work investigates the impacts of the p-AlGaN electron blocking layer (EBL) on the performance of low current injected green GaN-based micro-light-emitting-diodes ( \mu -LEDs). The peak-EQE corresponded current density of \mu -LEDs with and without EBL are measured at 0.83 and 0.5 A/cm2, respec...

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Veröffentlicht in:IEEE transactions on electron devices 2024-01, Vol.71 (12), p.7563-7568
Hauptverfasser: Lai, Chao-Hsu, Yang, Dongkai, Lin, Zong-Min, Gong, Honglin, Liu, Hsin-Ysu, Wang, Yunan, Zhu, Lihong, Chen, Zhong, Wu, Tingzhu, Lai, Shouqiang, Lu, Yijun
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container_title IEEE transactions on electron devices
container_volume 71
creator Lai, Chao-Hsu
Yang, Dongkai
Lin, Zong-Min
Gong, Honglin
Liu, Hsin-Ysu
Wang, Yunan
Zhu, Lihong
Chen, Zhong
Wu, Tingzhu
Lai, Shouqiang
Lu, Yijun
description This work investigates the impacts of the p-AlGaN electron blocking layer (EBL) on the performance of low current injected green GaN-based micro-light-emitting-diodes ( \mu -LEDs). The peak-EQE corresponded current density of \mu -LEDs with and without EBL are measured at 0.83 and 0.5 A/cm2, respectively. In addition, the related carrier transport mechanisms in these devices are analyzed by using the ABC + f(n) model. The wavelength shifts indicate that there are weakened quantum-confined stark effect (QCSE) in the \mu -LEDs without p-AlGaN EBL. The polarization-induced phenomena such as band-bending, hole injection, and electron confinement at the multiple q uantum wells (MQWs)/EBL or MQWs/p-GaN interface have been simulated and analyzed, and the Raman and X-ray diffraction reciprocal-space-mapping (XRD-RSM) validate the improvement of crystal quality of green InGaN/GaN MQWs by removing the p-AlGaN EBL. Moreover, the results of surface temperature distribution indicated that the thermal performance of low-current injected green \mu -LEDs could also be improved by removing the p-AlGaN EBL.
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The peak-EQE corresponded current density of <inline-formula> <tex-math notation="LaTeX">\mu </tex-math></inline-formula>-LEDs with and without EBL are measured at 0.83 and 0.5 A/cm2, respectively. In addition, the related carrier transport mechanisms in these devices are analyzed by using the ABC + f(n) model. The wavelength shifts indicate that there are weakened quantum-confined stark effect (QCSE) in the <inline-formula> <tex-math notation="LaTeX">\mu </tex-math></inline-formula>-LEDs without p-AlGaN EBL. The polarization-induced phenomena such as band-bending, hole injection, and electron confinement at the multiple q uantum wells (MQWs)/EBL or MQWs/p-GaN interface have been simulated and analyzed, and the Raman and X-ray diffraction reciprocal-space-mapping (XRD-RSM) validate the improvement of crystal quality of green InGaN/GaN MQWs by removing the p-AlGaN EBL. Moreover, the results of surface temperature distribution indicated that the thermal performance of low-current injected green <inline-formula> <tex-math notation="LaTeX">\mu </tex-math></inline-formula>-LEDs could also be improved by removing the p-AlGaN EBL.]]></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2024.3472635</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Aluminum gallium nitrides ; Carrier transport ; Current density ; Electron blocking layer (EBL) ; Electrons ; Epitaxial growth ; Gallium ; Gallium nitrides ; green micro-light-emitting-diodes (μ-LEDs) ; Light emitting diodes ; low current density ; Low currents ; Performance evaluation ; Quantum well devices ; Stark effect ; Substrates ; Technological innovation ; Temperature distribution ; X-ray diffraction</subject><ispartof>IEEE transactions on electron devices, 2024-01, Vol.71 (12), p.7563-7568</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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The peak-EQE corresponded current density of <inline-formula> <tex-math notation="LaTeX">\mu </tex-math></inline-formula>-LEDs with and without EBL are measured at 0.83 and 0.5 A/cm2, respectively. In addition, the related carrier transport mechanisms in these devices are analyzed by using the ABC + f(n) model. The wavelength shifts indicate that there are weakened quantum-confined stark effect (QCSE) in the <inline-formula> <tex-math notation="LaTeX">\mu </tex-math></inline-formula>-LEDs without p-AlGaN EBL. The polarization-induced phenomena such as band-bending, hole injection, and electron confinement at the multiple q uantum wells (MQWs)/EBL or MQWs/p-GaN interface have been simulated and analyzed, and the Raman and X-ray diffraction reciprocal-space-mapping (XRD-RSM) validate the improvement of crystal quality of green InGaN/GaN MQWs by removing the p-AlGaN EBL. Moreover, the results of surface temperature distribution indicated that the thermal performance of low-current injected green <inline-formula> <tex-math notation="LaTeX">\mu </tex-math></inline-formula>-LEDs could also be improved by removing the p-AlGaN EBL.]]></description><subject>Aluminum gallium nitrides</subject><subject>Carrier transport</subject><subject>Current density</subject><subject>Electron blocking layer (EBL)</subject><subject>Electrons</subject><subject>Epitaxial growth</subject><subject>Gallium</subject><subject>Gallium nitrides</subject><subject>green micro-light-emitting-diodes (μ-LEDs)</subject><subject>Light emitting diodes</subject><subject>low current density</subject><subject>Low currents</subject><subject>Performance evaluation</subject><subject>Quantum well devices</subject><subject>Stark effect</subject><subject>Substrates</subject><subject>Technological innovation</subject><subject>Temperature distribution</subject><subject>X-ray diffraction</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkEtPwzAQhC0EEqVw58DBEucUv2Inxz5CqRQeh3KOHGcDKWmc2qlQ_z2u2gOn3ZHmm10NQveUTCgl6dM6W0wYYWLChWKSxxdoRONYRakU8hKNCKFJlPKEX6Mb7zdBSiHYCO1W216bwWNb4z6atkv9hrMWzOBsh2etNT9N94VzfQCHa-vw8A34A1xYt7ozcMRy-4vne-egG_Cq2wQWKrx0AB0OadFM-6BfG-NslGcLf4uuat16uDvPMfp8ztbzlyh_X67m0zwyVMVDBMTIiilaKpawVJFEC1WmTKY8VrWuUzAG4pjXQhGmOeNKsbKsjJaVosSUFR-jx1Nu7-xuD34oNnbvunCy4FQQKagM_BiRkyu8572Duuhds9XuUFBSHIstQrHFsdjiXGxAHk5IAwD_7IrLmCn-B_6Vcs4</recordid><startdate>20240101</startdate><enddate>20240101</enddate><creator>Lai, Chao-Hsu</creator><creator>Yang, Dongkai</creator><creator>Lin, Zong-Min</creator><creator>Gong, Honglin</creator><creator>Liu, Hsin-Ysu</creator><creator>Wang, Yunan</creator><creator>Zhu, Lihong</creator><creator>Chen, Zhong</creator><creator>Wu, Tingzhu</creator><creator>Lai, Shouqiang</creator><creator>Lu, Yijun</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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The peak-EQE corresponded current density of <inline-formula> <tex-math notation="LaTeX">\mu </tex-math></inline-formula>-LEDs with and without EBL are measured at 0.83 and 0.5 A/cm2, respectively. In addition, the related carrier transport mechanisms in these devices are analyzed by using the ABC + f(n) model. The wavelength shifts indicate that there are weakened quantum-confined stark effect (QCSE) in the <inline-formula> <tex-math notation="LaTeX">\mu </tex-math></inline-formula>-LEDs without p-AlGaN EBL. The polarization-induced phenomena such as band-bending, hole injection, and electron confinement at the multiple q uantum wells (MQWs)/EBL or MQWs/p-GaN interface have been simulated and analyzed, and the Raman and X-ray diffraction reciprocal-space-mapping (XRD-RSM) validate the improvement of crystal quality of green InGaN/GaN MQWs by removing the p-AlGaN EBL. Moreover, the results of surface temperature distribution indicated that the thermal performance of low-current injected green <inline-formula> <tex-math notation="LaTeX">\mu </tex-math></inline-formula>-LEDs could also be improved by removing the p-AlGaN EBL.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2024.3472635</doi><tpages>6</tpages><orcidid>https://orcid.org/0009-0000-5497-4159</orcidid><orcidid>https://orcid.org/0000-0002-9647-1565</orcidid><orcidid>https://orcid.org/0000-0002-7919-1967</orcidid><orcidid>https://orcid.org/0000-0002-1247-6597</orcidid><orcidid>https://orcid.org/0000-0001-9453-6823</orcidid><orcidid>https://orcid.org/0000-0002-1473-2224</orcidid></addata></record>
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subjects Aluminum gallium nitrides
Carrier transport
Current density
Electron blocking layer (EBL)
Electrons
Epitaxial growth
Gallium
Gallium nitrides
green micro-light-emitting-diodes (μ-LEDs)
Light emitting diodes
low current density
Low currents
Performance evaluation
Quantum well devices
Stark effect
Substrates
Technological innovation
Temperature distribution
X-ray diffraction
title Impacts of p-AlGaN Electron Blocking Layer for the Performance of Low Current Injected Green GaN-Based Micro-LEDs
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