Exploring the Effect of Dy Doping on the Performance of Solution-Processed Indium Oxide Thin Films and Thin-Film Transistors

In this study, we prepared Dy-doped indium oxide (In2O3) thin-film transistors (TFTs) using a solution-based method. We conducted a comprehensive investigation into the effects of Dy doping concentration on the structure, surface morphology, optical properties, and energy band structure of In2O3 thi...

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Veröffentlicht in:	IEEE transactions on electron devices 2024-12, Vol.71 (12), p.7557-7562
Hauptverfasser:	Du, Hongguo, Tuokedaerhan, Kamale, Zhang, Renjia, Ibraimov, Margulan, Sagidolda, Yerulan
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier density Crystal defects Crystallization Doping DyInO Electrical properties Energy bands Flat panel displays Indium indium oxide (In₂O₃) Indium oxides Morphology Optical films Optical properties Performance evaluation Photoelectrons Physics Scanning electron microscopy Semiconductor devices solution method Substrates Surface morphology Thin film transistors Thin films thin-film transistors (TFTs) Threshold voltage Transistors X ray photoelectron spectroscopy
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