A GaN‐on‐SiC Millimeter‐Wave Low Noise Amplifier Using Hybrid‐Matching Technique for 5G n258 Applications

ABSTRACT This letter details the design and implementation of a millimeter‐wave (mm‐Wave) low noise amplifier (LNA) employing 150‐nm gallium nitride on silicon carbide (GaN‐on‐SiC) high electron mobility transistor technology, specifically tailored for fifth‐generation (5G) applications. The propose...

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Veröffentlicht in:	Microwave and optical technology letters 2024-11, Vol.66 (11), p.n/a
Hauptverfasser:	Lan, Liang, Zhang, Zhihao, Huang, Chaoyu, Zhang, Gary
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplifiers Co-design Design optimization gallium nitride on silicon carbide Gallium nitrides high electron mobility transistor High electron mobility transistors hybrid matching technique Low noise low noise amplifier Matching millimeter‐wave Semiconductor devices Silicon carbide Topology
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