A GaN‐on‐SiC Millimeter‐Wave Low Noise Amplifier Using Hybrid‐Matching Technique for 5G n258 Applications
ABSTRACT This letter details the design and implementation of a millimeter‐wave (mm‐Wave) low noise amplifier (LNA) employing 150‐nm gallium nitride on silicon carbide (GaN‐on‐SiC) high electron mobility transistor technology, specifically tailored for fifth‐generation (5G) applications. The propose...
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| Veröffentlicht in: | Microwave and optical technology letters 2024-11, Vol.66 (11), p.n/a |
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| container_title | Microwave and optical technology letters |
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| creator | Lan, Liang Zhang, Zhihao Huang, Chaoyu Zhang, Gary |
| description | ABSTRACT
This letter details the design and implementation of a millimeter‐wave (mm‐Wave) low noise amplifier (LNA) employing 150‐nm gallium nitride on silicon carbide (GaN‐on‐SiC) high electron mobility transistor technology, specifically tailored for fifth‐generation (5G) applications. The proposed GaN‐based LNA integrates a hybrid matching topology alongside a co‐design strategy, thereby optimizing the noise figure (NF) by minimizing interstage matching components. The fabricated LNA, spanning a total chip area of 2.3 × 1.4 mm², exhibits a linear gain in the range of 17.41–19.2 dB and maintains an NF within 2.32–3.06 dB. Additionally, commendable input/output return losses exceeding 7.5 dB are achieved across the 23–27.5 GHz, with the apparatus consuming approximately 150 mW. |
| doi_str_mv | 10.1002/mop.70031 |
| format | Article |
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This letter details the design and implementation of a millimeter‐wave (mm‐Wave) low noise amplifier (LNA) employing 150‐nm gallium nitride on silicon carbide (GaN‐on‐SiC) high electron mobility transistor technology, specifically tailored for fifth‐generation (5G) applications. The proposed GaN‐based LNA integrates a hybrid matching topology alongside a co‐design strategy, thereby optimizing the noise figure (NF) by minimizing interstage matching components. The fabricated LNA, spanning a total chip area of 2.3 × 1.4 mm², exhibits a linear gain in the range of 17.41–19.2 dB and maintains an NF within 2.32–3.06 dB. Additionally, commendable input/output return losses exceeding 7.5 dB are achieved across the 23–27.5 GHz, with the apparatus consuming approximately 150 mW.</description><identifier>ISSN: 0895-2477</identifier><identifier>EISSN: 1098-2760</identifier><identifier>DOI: 10.1002/mop.70031</identifier><language>eng</language><publisher>New York: Wiley Subscription Services, Inc</publisher><subject>Amplifiers ; Co-design ; Design optimization ; gallium nitride on silicon carbide ; Gallium nitrides ; high electron mobility transistor ; High electron mobility transistors ; hybrid matching technique ; Low noise ; low noise amplifier ; Matching ; millimeter‐wave ; Semiconductor devices ; Silicon carbide ; Topology</subject><ispartof>Microwave and optical technology letters, 2024-11, Vol.66 (11), p.n/a</ispartof><rights>2024 Wiley Periodicals LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c1871-d6e036d56b6edf569c68bff36ef46f23ea6cf73e91bd8bea5b9b8d2152dfb2bd3</cites><orcidid>0009-0004-0001-6237</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fmop.70031$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fmop.70031$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,777,781,1412,27905,27906,45555,45556</link.rule.ids></links><search><creatorcontrib>Lan, Liang</creatorcontrib><creatorcontrib>Zhang, Zhihao</creatorcontrib><creatorcontrib>Huang, Chaoyu</creatorcontrib><creatorcontrib>Zhang, Gary</creatorcontrib><title>A GaN‐on‐SiC Millimeter‐Wave Low Noise Amplifier Using Hybrid‐Matching Technique for 5G n258 Applications</title><title>Microwave and optical technology letters</title><description>ABSTRACT
This letter details the design and implementation of a millimeter‐wave (mm‐Wave) low noise amplifier (LNA) employing 150‐nm gallium nitride on silicon carbide (GaN‐on‐SiC) high electron mobility transistor technology, specifically tailored for fifth‐generation (5G) applications. The proposed GaN‐based LNA integrates a hybrid matching topology alongside a co‐design strategy, thereby optimizing the noise figure (NF) by minimizing interstage matching components. The fabricated LNA, spanning a total chip area of 2.3 × 1.4 mm², exhibits a linear gain in the range of 17.41–19.2 dB and maintains an NF within 2.32–3.06 dB. Additionally, commendable input/output return losses exceeding 7.5 dB are achieved across the 23–27.5 GHz, with the apparatus consuming approximately 150 mW.</description><subject>Amplifiers</subject><subject>Co-design</subject><subject>Design optimization</subject><subject>gallium nitride on silicon carbide</subject><subject>Gallium nitrides</subject><subject>high electron mobility transistor</subject><subject>High electron mobility transistors</subject><subject>hybrid matching technique</subject><subject>Low noise</subject><subject>low noise amplifier</subject><subject>Matching</subject><subject>millimeter‐wave</subject><subject>Semiconductor devices</subject><subject>Silicon carbide</subject><subject>Topology</subject><issn>0895-2477</issn><issn>1098-2760</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp1kE1OwzAQhS0EEqWw4AaWWLFI65_GTpZRBS1SW5BoxdKKE5u6SuLUbqm64wickZPgErZsZqSn7808PQBuMRpghMiwtu2AI0TxGehhlCYR4Qydgx5K0jgiI84vwZX3GxQQzkkPbDM4yRffn1-2CePVjOHcVJWp1U65ILzlHwrO7AEurPEKZnVbGW2Ugytvmnc4PUpnysDN812xPilLVawbs90rqK2D8QQ2JE5g1gZfke-Mbfw1uNB55dXN3-6D1ePDcjyNZs-Tp3E2iwqccByVTCHKyphJpkods7RgidSaMqVHTBOqclZoTlWKZZlIlccylUlJcExKLYksaR_cdXdbZ0MevxMbu3dNeCkopoRzOuJJoO47qnDWe6e0aJ2pc3cUGIlToyI0Kn4bDeywYw-mUsf_QTF_fukcP_Mye-Y</recordid><startdate>202411</startdate><enddate>202411</enddate><creator>Lan, Liang</creator><creator>Zhang, Zhihao</creator><creator>Huang, Chaoyu</creator><creator>Zhang, Gary</creator><general>Wiley Subscription Services, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope><orcidid>https://orcid.org/0009-0004-0001-6237</orcidid></search><sort><creationdate>202411</creationdate><title>A GaN‐on‐SiC Millimeter‐Wave Low Noise Amplifier Using Hybrid‐Matching Technique for 5G n258 Applications</title><author>Lan, Liang ; Zhang, Zhihao ; Huang, Chaoyu ; Zhang, Gary</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1871-d6e036d56b6edf569c68bff36ef46f23ea6cf73e91bd8bea5b9b8d2152dfb2bd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Amplifiers</topic><topic>Co-design</topic><topic>Design optimization</topic><topic>gallium nitride on silicon carbide</topic><topic>Gallium nitrides</topic><topic>high electron mobility transistor</topic><topic>High electron mobility transistors</topic><topic>hybrid matching technique</topic><topic>Low noise</topic><topic>low noise amplifier</topic><topic>Matching</topic><topic>millimeter‐wave</topic><topic>Semiconductor devices</topic><topic>Silicon carbide</topic><topic>Topology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lan, Liang</creatorcontrib><creatorcontrib>Zhang, Zhihao</creatorcontrib><creatorcontrib>Huang, Chaoyu</creatorcontrib><creatorcontrib>Zhang, Gary</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microwave and optical technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lan, Liang</au><au>Zhang, Zhihao</au><au>Huang, Chaoyu</au><au>Zhang, Gary</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A GaN‐on‐SiC Millimeter‐Wave Low Noise Amplifier Using Hybrid‐Matching Technique for 5G n258 Applications</atitle><jtitle>Microwave and optical technology letters</jtitle><date>2024-11</date><risdate>2024</risdate><volume>66</volume><issue>11</issue><epage>n/a</epage><issn>0895-2477</issn><eissn>1098-2760</eissn><abstract>ABSTRACT
This letter details the design and implementation of a millimeter‐wave (mm‐Wave) low noise amplifier (LNA) employing 150‐nm gallium nitride on silicon carbide (GaN‐on‐SiC) high electron mobility transistor technology, specifically tailored for fifth‐generation (5G) applications. The proposed GaN‐based LNA integrates a hybrid matching topology alongside a co‐design strategy, thereby optimizing the noise figure (NF) by minimizing interstage matching components. The fabricated LNA, spanning a total chip area of 2.3 × 1.4 mm², exhibits a linear gain in the range of 17.41–19.2 dB and maintains an NF within 2.32–3.06 dB. Additionally, commendable input/output return losses exceeding 7.5 dB are achieved across the 23–27.5 GHz, with the apparatus consuming approximately 150 mW.</abstract><cop>New York</cop><pub>Wiley Subscription Services, Inc</pub><doi>10.1002/mop.70031</doi><tpages>6</tpages><orcidid>https://orcid.org/0009-0004-0001-6237</orcidid></addata></record> |
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| subjects | Amplifiers Co-design Design optimization gallium nitride on silicon carbide Gallium nitrides high electron mobility transistor High electron mobility transistors hybrid matching technique Low noise low noise amplifier Matching millimeter‐wave Semiconductor devices Silicon carbide Topology |
| title | A GaN‐on‐SiC Millimeter‐Wave Low Noise Amplifier Using Hybrid‐Matching Technique for 5G n258 Applications |
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