Nonconducting RF and DC Hot Carrier Stresses in 14/16-nm FinFETs for RF Power Amplifiers

Hot carrier reliability under nonconducting (NC) RF and dc stresses is measured and modeled on 14/16-nm FinFETs used for RF PAs. The impact of stress on \textbf{I}-\textbf{V} and RF parameters is examined. RF parameter stress response suggests that degradations are located near the drain end of th...

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