Orientation-dependent strain and dislocation in HVPE-grown α-Ga2O3 epilayers on sapphire substrates

Orientation-dependent substrates provide effective platforms for achieving α-Ga2O3 with low dislocation densities, whereas the associated strain and dislocation dynamics have not been fully explored. Herein, we investigated the evolution of growth mode, interfacial strain, and dislocation propagatio...

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Veröffentlicht in:	Applied physics letters 2024-11, Vol.125 (20)
Hauptverfasser:	Zhang, Yijun, Shen, Yang, Cui, Mei, Liu, Jing, Xie, Dabao, Ren, Fangfang, Gu, Shulin, Zheng, Youdou, Zhang, Rong, Ye, Jiandong
Format:	Artikel
Sprache:	eng
Schlagworte:	Dislocation density Edge dislocations Epitaxial growth Gallium oxides Misfit dislocations Orientation Propagation modes Sapphire Strain analysis Stress relaxation Substrates Surface tension Tensile strain Tensors Vapor phase epitaxy
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