Vertical GaN PIN Structure with Intrinsic AlGaN Drift Layer Grown Using Metal‐Organic Chemical Vapor Deposition

In this study, it is aimed to examine the DC characteristics of a vertical PIN diode featuring AlGaN as the drift layers. In the investigation, observing the changes in DC characteristics with the variation of Al content (0%–4%) in the drift layers as well as its thickness is focused on. By applying...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2024-11, Vol.221 (21), p.n/a
Hauptverfasser:	Heo, Yunseok, Jeong, Joocheol, Mohan, Shyam, Kim, Minho, Park, Jooyong, Lee, Joonhyuk, Nam, Okhyun
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaN Aluminum gallium nitrides Breakdown Chemical vapor deposition Drift Electric potential Electron microscopes Gallium nitrides GaN Leakage current Luminescence metal‐organic chemical vapor deposition (MOCVD) Organic chemicals Organic chemistry Photoluminescence PIN diodes Power devices Thickness vertical PIN diodes Voltage
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