Measurement of the Dispersion of χ(3)$\chi ^{(3)}$ of SiO2${\rm SiO}_2$ and SiN Across the THz and Far‐Infrared Frequency Bands

Terahertz (THz) radiation sources based on two‐color femtosecond plasmas in air are becoming a mature technology for coherent spectroscopy and strong‐field physics across the extended THz range to several tens of THz. The field‐resolved detection of such THz transients relies on the third‐order nonl...

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Veröffentlicht in:Laser & photonics reviews 2024-11, Vol.18 (11), p.n/a
Hauptverfasser: Zhou, Binbin, Rasmussen, Mattias, Zibod, Soheil, Yan, Siqi, Noori, Narwan Kabir, Nagy, Oliver, Ding, Yunhong, Lange, Simon Jappe, Dolgaleva, Ksenia, Boyd, Robert W., Jepsen, Peter Uhd
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container_issue 11
container_start_page
container_title Laser & photonics reviews
container_volume 18
creator Zhou, Binbin
Rasmussen, Mattias
Zibod, Soheil
Yan, Siqi
Noori, Narwan Kabir
Nagy, Oliver
Ding, Yunhong
Lange, Simon Jappe
Dolgaleva, Ksenia
Boyd, Robert W.
Jepsen, Peter Uhd
description Terahertz (THz) radiation sources based on two‐color femtosecond plasmas in air are becoming a mature technology for coherent spectroscopy and strong‐field physics across the extended THz range to several tens of THz. The field‐resolved detection of such THz transients relies on the third‐order nonlinearity of the detection medium. Here, a comparative measurement is demonstrated with air‐biased coherent detection (ABCD) and solid‐state biased detection (SSBCD) as a novel method to measure the dispersion of the magnitude and phase of the relevant third‐order nonlinearity χ(3)(2ω±Ω;ω,ω,±Ω)$\chi ^{(3)}(2\omega \pm \Omega;\omega,\omega,\pm \Omega)$ for fused silica (SiO2${\rm SiO}_2$) and silicon nitride (SiN). Based on the development of the ultrabroadband SSBCD device with a detection bandwidth exceeding 30 THz, χ(3)$\chi ^{(3)}$ measurements are obtained across the 1–28 THz frequency range, hence covering the THz and far‐infrared. It is shown that the vibrational modes in SiO2${\rm SiO}_2$ and SiN in the THz range lead to strong resonant enhancement and dispersion of the nonlinearity. The SSBCD devices operate down to nanojoule (nJ) probe energy, and their is demonstrated by measuring the dielectric function of the Lorentzian line profile of transverse‐optical (TO) phonon mode at 9 THz in single‐crystal gallium arsenide (GaAs) and observing the weak phonon combination bands near the TO phonon. Terahertz (THz) radiation sources using two‐color femtosecond plasmas in air are advancing coherent spectroscopy and strong‐field physics. A novel method combining air‐biased coherent detection (ABCD) and solid‐state biased detection (SSBCD) is introduced to measure third‐order nonlinearity in fused silica and silicon nitride. The new‐generation ultra‐broadband SSBCD device, with a bandwidth exceeding 30 THz, demonstrates strong resonant enhancement and dispersion, requiring minimal optical probe energy.
doi_str_mv 10.1002/lpor.202301321
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The SSBCD devices operate down to nanojoule (nJ) probe energy, and their is demonstrated by measuring the dielectric function of the Lorentzian line profile of transverse‐optical (TO) phonon mode at 9 THz in single‐crystal gallium arsenide (GaAs) and observing the weak phonon combination bands near the TO phonon. Terahertz (THz) radiation sources using two‐color femtosecond plasmas in air are advancing coherent spectroscopy and strong‐field physics. A novel method combining air‐biased coherent detection (ABCD) and solid‐state biased detection (SSBCD) is introduced to measure third‐order nonlinearity in fused silica and silicon nitride. 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The field‐resolved detection of such THz transients relies on the third‐order nonlinearity of the detection medium. Here, a comparative measurement is demonstrated with air‐biased coherent detection (ABCD) and solid‐state biased detection (SSBCD) as a novel method to measure the dispersion of the magnitude and phase of the relevant third‐order nonlinearity χ(3)(2ω±Ω;ω,ω,±Ω)$\chi ^{(3)}(2\omega \pm \Omega;\omega,\omega,\pm \Omega)$ for fused silica (SiO2${\rm SiO}_2$) and silicon nitride (SiN). Based on the development of the ultrabroadband SSBCD device with a detection bandwidth exceeding 30 THz, χ(3)$\chi ^{(3)}$ measurements are obtained across the 1–28 THz frequency range, hence covering the THz and far‐infrared. It is shown that the vibrational modes in SiO2${\rm SiO}_2$ and SiN in the THz range lead to strong resonant enhancement and dispersion of the nonlinearity. The SSBCD devices operate down to nanojoule (nJ) probe energy, and their is demonstrated by measuring the dielectric function of the Lorentzian line profile of transverse‐optical (TO) phonon mode at 9 THz in single‐crystal gallium arsenide (GaAs) and observing the weak phonon combination bands near the TO phonon. Terahertz (THz) radiation sources using two‐color femtosecond plasmas in air are advancing coherent spectroscopy and strong‐field physics. A novel method combining air‐biased coherent detection (ABCD) and solid‐state biased detection (SSBCD) is introduced to measure third‐order nonlinearity in fused silica and silicon nitride. 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source Wiley Online Library Journals Frontfile Complete
subjects Far infrared radiation
Frequency ranges
Fused silica
Gallium arsenide
Measuring instruments
nonlinear optics
Nonlinearity
Phonons
Radiation sources
Silicon dioxide
Silicon nitride
terahertz detection
Terahertz frequencies
terahertz optics
ultrafast optics
Vibration mode
title Measurement of the Dispersion of χ(3)$\chi ^{(3)}$ of SiO2${\rm SiO}_2$ and SiN Across the THz and Far‐Infrared Frequency Bands
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