Active interface characteristics of heterogeneously integrated GaAsSb/Si photodiodes

There is increased interest in the heterogeneous integration of various compound semiconductors with Si for a variety of electronic and photonic applications. This paper focuses on integrating GaAsSb (with absorption in the C-band at 1550 nm) with silicon to fabricate photodiodes, leveraging epitaxi...

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Veröffentlicht in:Applied physics letters 2024-10, Vol.125 (17)
Hauptverfasser: Muduli, Manisha, Xia, Yongkang, Lee, Seunghyun, Gajowski, Nathan, Chae, Chris, Rajan, Siddharth, Hwang, Jinwoo, Arafin, Shamsul, Krishna, Sanjay
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Sprache:eng
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Zusammenfassung:There is increased interest in the heterogeneous integration of various compound semiconductors with Si for a variety of electronic and photonic applications. This paper focuses on integrating GaAsSb (with absorption in the C-band at 1550 nm) with silicon to fabricate photodiodes, leveraging epitaxial layer transfer (ELT) methods. Two ELT techniques—nanomembrane transfer printing and macro-transfer printing—are compared for transferring GaAsSb films from InP substrates to Si, forming PIN diodes. Characterization through atomic force microscopy and transmission electron microscopy exhibits a high-quality, defect-free interface. Current–voltage (IV) measurements and capacitance–voltage analysis validate the quality and functionality of the heterostructures. Photocurrent measurements at room temperature and 200 K demonstrate the device's photo-response at 1.55 μm, highlighting the presence of an active interface.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0230901