Determination of the conduction and valence band offsets at the Co3O4/3C-SiC p-n heterojunction

The band offsets of semiconductor heterojunctions are critical parameters for the design of electronic and optoelectronic devices. In this work, we report the fabrication of a Co3O4/3C-SiC p-n heterojunction and the determination of the conduction band and valence band offsets at the Co3O4/3C-SiC he...

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Veröffentlicht in:Applied physics letters 2024-10, Vol.125 (16)
Hauptverfasser: Zeng, Hui, Wang, Weimin, Ivanov, Ivan G., Darakchieva, Vanya, Sun, Jianwu
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Sprache:eng
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Zusammenfassung:The band offsets of semiconductor heterojunctions are critical parameters for the design of electronic and optoelectronic devices. In this work, we report the fabrication of a Co3O4/3C-SiC p-n heterojunction and the determination of the conduction band and valence band offsets at the Co3O4/3C-SiC heterojunction. Our results reveal that the Co3O4/3C-SiC p-n heterojunction exhibits a type-II band alignment, with a conduction band offset of 0.75 eV and a valence band offset of 0.96 eV. These experimental findings are crucial for the design and development of 3C-SiC devices for electronic and optoelectronic applications.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0226900