Multiferroic properties and the layer-stacking quantum anomalous Hall effect in two-dimensional RuOHX (X = F, Cl, Br)

Exploring the physics coupled with layer degrees of freedom in materials has become a hot topic in quantum layertronics. We propose a robust second-order topological insulator monolayer RuOHX (X = F, Cl, and Br), a two-dimensional ferromagnetic semiconductor with large valley polarization, capable o...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 2024-10, Vol.125 (17)
Hauptverfasser:	Tian, Yuping, Wang, Chao-Bo, Li, Linyang, Kong, Xiangru, Gong, Wei-Jiang
Format:	Artikel
Sprache:	eng
Schlagworte:	Bilayers Ferroelectricity Ferromagnetic materials Interlayers Phase transitions Polarization (spin alignment) Quantum Hall effect Topological insulators
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!