Mechanism of frequency-dependent gate breakdown in p-GaN/AlGaN/GaN HEMTs

In this Letter, time-dependent gate breakdown (TDB) characteristics under dynamic switching conditions were investigated in p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs) with either Schottky-type or Ohmic-type gates. The dynamic TDB of the Schottky-type devices increased with frequencie...

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Veröffentlicht in:	Applied physics letters 2024-10, Vol.125 (17)
Hauptverfasser:	Yin, Yulian, Liu, Xiaoyu, Tang, Xi, Xie, Xuan, Wang, Huan, Zhao, Changhui, Yang, Shu
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Breakdown Electroluminescence Energy bands Gallium nitrides High electron mobility transistors Hot electrons Radiative recombination Semiconductor devices Ultraviolet emission
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