Nanosilicon Stabilized With Ligands: Effect of High‐Energy Proton Beam on Luminescent Properties
ABSTRACT Silicon nanopowders with nitrogen heterocyclic carbene (NHC) and butyl as stabilizing ligands were synthesized by bottom‐up chemical methods. Transmission electron microscopy (TEM) was used to obtain nanoparticle size distribution with 1.8–2.5‐nm average diameter. Optical characteristics (p...
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| Veröffentlicht in: | Surface and interface analysis 2024-12, Vol.56 (12), p.858-865 |
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| container_title | Surface and interface analysis |
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| creator | Aslanov, Leonid A. Zaitsev, Vladimir B. Zakharov, Valery N. Kudryavtsev, Igor K. Senyavin, Vladimir M. Lagov, Petr B. Romanteeva, Elena P. |
| description | ABSTRACT
Silicon nanopowders with nitrogen heterocyclic carbene (NHC) and butyl as stabilizing ligands were synthesized by bottom‐up chemical methods. Transmission electron microscopy (TEM) was used to obtain nanoparticle size distribution with 1.8–2.5‐nm average diameter. Optical characteristics (photoluminescence [PL] and infrared [IR] absorption spectra) of samples were investigated as fabricated and on different steps of irradiation by high‐energy 22.5‐MeV protons. The PL spectral changes are slightly different for two cases, but in general, we can see a decrease in luminescence amplitude with fluence growth up to 4·1014 cm−2, mainly for NHC‐stabilized nanosilicon. Main mechanisms of radiation‐induced changes in nanosilicon sample optical properties are discussed by the joint use of PL and IR spectra analysis. |
| doi_str_mv | 10.1002/sia.7354 |
| format | Article |
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Silicon nanopowders with nitrogen heterocyclic carbene (NHC) and butyl as stabilizing ligands were synthesized by bottom‐up chemical methods. Transmission electron microscopy (TEM) was used to obtain nanoparticle size distribution with 1.8–2.5‐nm average diameter. Optical characteristics (photoluminescence [PL] and infrared [IR] absorption spectra) of samples were investigated as fabricated and on different steps of irradiation by high‐energy 22.5‐MeV protons. The PL spectral changes are slightly different for two cases, but in general, we can see a decrease in luminescence amplitude with fluence growth up to 4·1014 cm−2, mainly for NHC‐stabilized nanosilicon. Main mechanisms of radiation‐induced changes in nanosilicon sample optical properties are discussed by the joint use of PL and IR spectra analysis.</description><identifier>ISSN: 0142-2421</identifier><identifier>EISSN: 1096-9918</identifier><identifier>DOI: 10.1002/sia.7354</identifier><language>eng</language><publisher>Bognor Regis: Wiley Subscription Services, Inc</publisher><subject>Absorption spectra ; Chemical synthesis ; Fluence ; high‐energy protons ; Infrared spectra ; Infrared spectroscopy ; Ligands ; Luminescence ; nanosilicon ; Optical properties ; Photoluminescence ; Proton beams ; Size distribution ; stable defects</subject><ispartof>Surface and interface analysis, 2024-12, Vol.56 (12), p.858-865</ispartof><rights>2024 John Wiley & Sons Ltd.</rights><rights>2024 John Wiley & Sons, Ltd.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c2184-87f483a632501dc891193286016e51b9bf1f129e268754aa5927c021a2e940b73</cites><orcidid>0000-0002-6987-7877 ; 0000-0002-0023-9770 ; 0000-0003-3195-7107 ; 0000-0002-0614-2902</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fsia.7354$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fsia.7354$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27901,27902,45550,45551</link.rule.ids></links><search><creatorcontrib>Aslanov, Leonid A.</creatorcontrib><creatorcontrib>Zaitsev, Vladimir B.</creatorcontrib><creatorcontrib>Zakharov, Valery N.</creatorcontrib><creatorcontrib>Kudryavtsev, Igor K.</creatorcontrib><creatorcontrib>Senyavin, Vladimir M.</creatorcontrib><creatorcontrib>Lagov, Petr B.</creatorcontrib><creatorcontrib>Romanteeva, Elena P.</creatorcontrib><title>Nanosilicon Stabilized With Ligands: Effect of High‐Energy Proton Beam on Luminescent Properties</title><title>Surface and interface analysis</title><description>ABSTRACT
Silicon nanopowders with nitrogen heterocyclic carbene (NHC) and butyl as stabilizing ligands were synthesized by bottom‐up chemical methods. Transmission electron microscopy (TEM) was used to obtain nanoparticle size distribution with 1.8–2.5‐nm average diameter. Optical characteristics (photoluminescence [PL] and infrared [IR] absorption spectra) of samples were investigated as fabricated and on different steps of irradiation by high‐energy 22.5‐MeV protons. The PL spectral changes are slightly different for two cases, but in general, we can see a decrease in luminescence amplitude with fluence growth up to 4·1014 cm−2, mainly for NHC‐stabilized nanosilicon. Main mechanisms of radiation‐induced changes in nanosilicon sample optical properties are discussed by the joint use of PL and IR spectra analysis.</description><subject>Absorption spectra</subject><subject>Chemical synthesis</subject><subject>Fluence</subject><subject>high‐energy protons</subject><subject>Infrared spectra</subject><subject>Infrared spectroscopy</subject><subject>Ligands</subject><subject>Luminescence</subject><subject>nanosilicon</subject><subject>Optical properties</subject><subject>Photoluminescence</subject><subject>Proton beams</subject><subject>Size distribution</subject><subject>stable defects</subject><issn>0142-2421</issn><issn>1096-9918</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp1kMFKAzEQhoMoWKvgIwS8eNmaSbLZxFst1RYWFap4DNlt0qa0uzXZUurJR_AZfRK31qunf2C-fwY-hC6B9IAQehO96WUs5UeoA0SJRCmQx6hDgNOEcgqn6CzGBSFEMik6qHg0VR390pd1hSeNKdrxw07xm2_mOPczU03jLR46Z8sG1w6P_Gz-_fk1rGyY7fBzqJu2d2fNCreZb1a-srG0VbNfrW1ovI3n6MSZZbQXf9lFr_fDl8EoyZ8exoN-npQUJE9k5rhkRjCaEpiWUgEoRqUgIGwKhSocOKDKUiGzlBuTKpqVhIKhVnFSZKyLrg5316F-39jY6EW9CVX7UjOgTHABnLTU9YEqQx1jsE6vg1-ZsNNA9N6gbg3qvcEWTQ7o1i_t7l9OT8b9X_4HVoFxEw</recordid><startdate>202412</startdate><enddate>202412</enddate><creator>Aslanov, Leonid A.</creator><creator>Zaitsev, Vladimir B.</creator><creator>Zakharov, Valery N.</creator><creator>Kudryavtsev, Igor K.</creator><creator>Senyavin, Vladimir M.</creator><creator>Lagov, Petr B.</creator><creator>Romanteeva, Elena P.</creator><general>Wiley Subscription Services, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-6987-7877</orcidid><orcidid>https://orcid.org/0000-0002-0023-9770</orcidid><orcidid>https://orcid.org/0000-0003-3195-7107</orcidid><orcidid>https://orcid.org/0000-0002-0614-2902</orcidid></search><sort><creationdate>202412</creationdate><title>Nanosilicon Stabilized With Ligands: Effect of High‐Energy Proton Beam on Luminescent Properties</title><author>Aslanov, Leonid A. ; Zaitsev, Vladimir B. ; Zakharov, Valery N. ; Kudryavtsev, Igor K. ; Senyavin, Vladimir M. ; Lagov, Petr B. ; Romanteeva, Elena P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2184-87f483a632501dc891193286016e51b9bf1f129e268754aa5927c021a2e940b73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Absorption spectra</topic><topic>Chemical synthesis</topic><topic>Fluence</topic><topic>high‐energy protons</topic><topic>Infrared spectra</topic><topic>Infrared spectroscopy</topic><topic>Ligands</topic><topic>Luminescence</topic><topic>nanosilicon</topic><topic>Optical properties</topic><topic>Photoluminescence</topic><topic>Proton beams</topic><topic>Size distribution</topic><topic>stable defects</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Aslanov, Leonid A.</creatorcontrib><creatorcontrib>Zaitsev, Vladimir B.</creatorcontrib><creatorcontrib>Zakharov, Valery N.</creatorcontrib><creatorcontrib>Kudryavtsev, Igor K.</creatorcontrib><creatorcontrib>Senyavin, Vladimir M.</creatorcontrib><creatorcontrib>Lagov, Petr B.</creatorcontrib><creatorcontrib>Romanteeva, Elena P.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Surface and interface analysis</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Aslanov, Leonid A.</au><au>Zaitsev, Vladimir B.</au><au>Zakharov, Valery N.</au><au>Kudryavtsev, Igor K.</au><au>Senyavin, Vladimir M.</au><au>Lagov, Petr B.</au><au>Romanteeva, Elena P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Nanosilicon Stabilized With Ligands: Effect of High‐Energy Proton Beam on Luminescent Properties</atitle><jtitle>Surface and interface analysis</jtitle><date>2024-12</date><risdate>2024</risdate><volume>56</volume><issue>12</issue><spage>858</spage><epage>865</epage><pages>858-865</pages><issn>0142-2421</issn><eissn>1096-9918</eissn><abstract>ABSTRACT
Silicon nanopowders with nitrogen heterocyclic carbene (NHC) and butyl as stabilizing ligands were synthesized by bottom‐up chemical methods. Transmission electron microscopy (TEM) was used to obtain nanoparticle size distribution with 1.8–2.5‐nm average diameter. Optical characteristics (photoluminescence [PL] and infrared [IR] absorption spectra) of samples were investigated as fabricated and on different steps of irradiation by high‐energy 22.5‐MeV protons. The PL spectral changes are slightly different for two cases, but in general, we can see a decrease in luminescence amplitude with fluence growth up to 4·1014 cm−2, mainly for NHC‐stabilized nanosilicon. Main mechanisms of radiation‐induced changes in nanosilicon sample optical properties are discussed by the joint use of PL and IR spectra analysis.</abstract><cop>Bognor Regis</cop><pub>Wiley Subscription Services, Inc</pub><doi>10.1002/sia.7354</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-6987-7877</orcidid><orcidid>https://orcid.org/0000-0002-0023-9770</orcidid><orcidid>https://orcid.org/0000-0003-3195-7107</orcidid><orcidid>https://orcid.org/0000-0002-0614-2902</orcidid><oa>free_for_read</oa></addata></record> |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | Absorption spectra Chemical synthesis Fluence high‐energy protons Infrared spectra Infrared spectroscopy Ligands Luminescence nanosilicon Optical properties Photoluminescence Proton beams Size distribution stable defects |
| title | Nanosilicon Stabilized With Ligands: Effect of High‐Energy Proton Beam on Luminescent Properties |
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