Investigating the impact of Gd3+ ion substitution in Sr2FeTiO6: insights into magnetic, electrical, and structural properties
In the present investigations, Gd 3+ ions were substituted at the Sr 2+ site through conventional solid state reaction technique. The influence of Gd 3+ ion substitution on the physical attributes of Sr 2 FeTiO 6 (SFTO) was meticulously examined. The basic structure of Sr 2 − x Gd x FeTiO 6 (SGFTO)...
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creator | Punitha, J. Stella Raji, Ramesh Kumar Kumar, K. Saravana Ramachandran, Tholkappiyan Hamed, Fathalla Nataraj, A. |
description | In the present investigations, Gd
3+
ions were substituted at the Sr
2+
site through conventional solid state reaction technique. The influence of Gd
3+
ion substitution on the physical attributes of Sr
2
FeTiO
6
(SFTO) was meticulously examined. The basic structure of Sr
2 − x
Gd
x
FeTiO
6
(SGFTO) (x = 0.2 to 0.8), was employed to start the Rietveld structural refinement of the powder X-ray diffraction patterns. This process confirmed the presence of a cubic structure with a space group of
Pm3m
. The replacement of Gd
3+
ions, noted for their larger ionic radii, led to a minor increase in the lattice parameters and the volume of the unit cell. The identity of the elements within the compound was determined by examining their oxidation states through X-ray photoelectron spectroscopy. The SEM images reveal that as Gd content increases in the SGFTO samples, the structure becomes denser and more agglomerated, with reduced porosity and less uniform particle sizes. This suggests that higher Gd content leads to a more compact morphology, potentially impacting the material’s electrochemical performance and mechanical stability. The use of diffuse reflectance measurements confirmed that the band gap values decreased slightly from 2.95 eV to 2.24 eV for the Sr
2 − x
Gd
x
FeTiO
6
(x = 0.2–0.8) materials, indicating that these synthesized samples exhibit semiconductor nature. The study investigated how often the dielectric constant and its behavior change with temperature, and these measurements proved that as the amount of Gd
3+
in the material increased from 0.2 to 0.8, the dielectric constant also increases. The research on magnetization showed that the prepared materials had a stronger magnetic property and displayed a antiferromagnetic behavior. All synthesized materials made in this way has the possibility to be used in today’s electronic devices, magneto-optical storage devices, and magneto-dielectric technologies.
Highlights
• The study investigates the substitution of Gd
3+
ions at the Sr
2+
site in Sr
2
FeTiO
6
using the solid-state reaction method, examining its impact on the material’s physical properties.
• Rietveld refinement of X-ray diffraction patterns confirmed that Sr
2-x
Gd
x
FeTiO
6
(x = 0.2–0.8) maintains a cubic symmetry with a
Pm3m
space group, with Gd
3+
ion substitution causing a slight increase in lattice parameters and unit cell volume.
• X-ray photoelectron spectroscopy and EDAX pattern analysis confirmed the presence and uniform distribu |
doi_str_mv | 10.1007/s00339-024-08012-6 |
format | Article |
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3+
ions were substituted at the Sr
2+
site through conventional solid state reaction technique. The influence of Gd
3+
ion substitution on the physical attributes of Sr
2
FeTiO
6
(SFTO) was meticulously examined. The basic structure of Sr
2 − x
Gd
x
FeTiO
6
(SGFTO) (x = 0.2 to 0.8), was employed to start the Rietveld structural refinement of the powder X-ray diffraction patterns. This process confirmed the presence of a cubic structure with a space group of
Pm3m
. The replacement of Gd
3+
ions, noted for their larger ionic radii, led to a minor increase in the lattice parameters and the volume of the unit cell. The identity of the elements within the compound was determined by examining their oxidation states through X-ray photoelectron spectroscopy. The SEM images reveal that as Gd content increases in the SGFTO samples, the structure becomes denser and more agglomerated, with reduced porosity and less uniform particle sizes. This suggests that higher Gd content leads to a more compact morphology, potentially impacting the material’s electrochemical performance and mechanical stability. The use of diffuse reflectance measurements confirmed that the band gap values decreased slightly from 2.95 eV to 2.24 eV for the Sr
2 − x
Gd
x
FeTiO
6
(x = 0.2–0.8) materials, indicating that these synthesized samples exhibit semiconductor nature. The study investigated how often the dielectric constant and its behavior change with temperature, and these measurements proved that as the amount of Gd
3+
in the material increased from 0.2 to 0.8, the dielectric constant also increases. The research on magnetization showed that the prepared materials had a stronger magnetic property and displayed a antiferromagnetic behavior. All synthesized materials made in this way has the possibility to be used in today’s electronic devices, magneto-optical storage devices, and magneto-dielectric technologies.
Highlights
• The study investigates the substitution of Gd
3+
ions at the Sr
2+
site in Sr
2
FeTiO
6
using the solid-state reaction method, examining its impact on the material’s physical properties.
• Rietveld refinement of X-ray diffraction patterns confirmed that Sr
2-x
Gd
x
FeTiO
6
(x = 0.2–0.8) maintains a cubic symmetry with a
Pm3m
space group, with Gd
3+
ion substitution causing a slight increase in lattice parameters and unit cell volume.
• X-ray photoelectron spectroscopy and EDAX pattern analysis confirmed the presence and uniform distribution of Sr, Gd, Fe, Ti and O elements, indicating a homogeneous and uniform structure.
• Diffuse reflectance measurements showed a reduction in band gap values from 2.95 eV to 2.24 eV with increasing Gd
3+
substitution, indicating a semiconductor-like nature of the synthesized samples.
• Dielectric constant measurements revealed a progressive increase with higher Gd content, while magnetization analysis indicated an enhanced magnetic nature with antiferromagnetic character, highlighting potential applications in electronic technologies, magneto-optical storage systems, and optoelectronic and sensor devices.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-024-08012-6</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Antiferromagnetism ; Characterization and Evaluation of Materials ; Condensed Matter Physics ; Cubic lattice ; Diffraction patterns ; Electrochemical analysis ; Electrons ; Energy gap ; Gadolinium ; Group theory ; Lattice parameters ; Machines ; Magnetic properties ; Magnetization ; Manufacturing ; Nanotechnology ; Optical and Electronic Materials ; Optical properties ; Optoelectronic devices ; Oxidation ; Pattern analysis ; Photoelectrons ; Physical properties ; Physics ; Physics and Astronomy ; Processes ; Reflectance ; Solid state ; Spectrum analysis ; Storage systems ; Substitution reactions ; Surfaces and Interfaces ; Thin Films ; Unit cell ; X ray photoelectron spectroscopy ; X ray powder diffraction ; X-ray diffraction</subject><ispartof>Applied physics. A, Materials science & processing, 2024-11, Vol.130 (11), Article 825</ispartof><rights>The Author(s), under exclusive licence to Springer-Verlag GmbH Germany, part of Springer Nature 2024. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c200t-151638b4035a243f28b7fa437fabd25d269641577e31e97f5a401501f7221c893</cites><orcidid>0000-0001-6729-5227 ; 0000-0002-4637-0870</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s00339-024-08012-6$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s00339-024-08012-6$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Punitha, J. Stella</creatorcontrib><creatorcontrib>Raji, Ramesh Kumar</creatorcontrib><creatorcontrib>Kumar, K. Saravana</creatorcontrib><creatorcontrib>Ramachandran, Tholkappiyan</creatorcontrib><creatorcontrib>Hamed, Fathalla</creatorcontrib><creatorcontrib>Nataraj, A.</creatorcontrib><title>Investigating the impact of Gd3+ ion substitution in Sr2FeTiO6: insights into magnetic, electrical, and structural properties</title><title>Applied physics. A, Materials science & processing</title><addtitle>Appl. Phys. A</addtitle><description>In the present investigations, Gd
3+
ions were substituted at the Sr
2+
site through conventional solid state reaction technique. The influence of Gd
3+
ion substitution on the physical attributes of Sr
2
FeTiO
6
(SFTO) was meticulously examined. The basic structure of Sr
2 − x
Gd
x
FeTiO
6
(SGFTO) (x = 0.2 to 0.8), was employed to start the Rietveld structural refinement of the powder X-ray diffraction patterns. This process confirmed the presence of a cubic structure with a space group of
Pm3m
. The replacement of Gd
3+
ions, noted for their larger ionic radii, led to a minor increase in the lattice parameters and the volume of the unit cell. The identity of the elements within the compound was determined by examining their oxidation states through X-ray photoelectron spectroscopy. The SEM images reveal that as Gd content increases in the SGFTO samples, the structure becomes denser and more agglomerated, with reduced porosity and less uniform particle sizes. This suggests that higher Gd content leads to a more compact morphology, potentially impacting the material’s electrochemical performance and mechanical stability. The use of diffuse reflectance measurements confirmed that the band gap values decreased slightly from 2.95 eV to 2.24 eV for the Sr
2 − x
Gd
x
FeTiO
6
(x = 0.2–0.8) materials, indicating that these synthesized samples exhibit semiconductor nature. The study investigated how often the dielectric constant and its behavior change with temperature, and these measurements proved that as the amount of Gd
3+
in the material increased from 0.2 to 0.8, the dielectric constant also increases. The research on magnetization showed that the prepared materials had a stronger magnetic property and displayed a antiferromagnetic behavior. All synthesized materials made in this way has the possibility to be used in today’s electronic devices, magneto-optical storage devices, and magneto-dielectric technologies.
Highlights
• The study investigates the substitution of Gd
3+
ions at the Sr
2+
site in Sr
2
FeTiO
6
using the solid-state reaction method, examining its impact on the material’s physical properties.
• Rietveld refinement of X-ray diffraction patterns confirmed that Sr
2-x
Gd
x
FeTiO
6
(x = 0.2–0.8) maintains a cubic symmetry with a
Pm3m
space group, with Gd
3+
ion substitution causing a slight increase in lattice parameters and unit cell volume.
• X-ray photoelectron spectroscopy and EDAX pattern analysis confirmed the presence and uniform distribution of Sr, Gd, Fe, Ti and O elements, indicating a homogeneous and uniform structure.
• Diffuse reflectance measurements showed a reduction in band gap values from 2.95 eV to 2.24 eV with increasing Gd
3+
substitution, indicating a semiconductor-like nature of the synthesized samples.
• Dielectric constant measurements revealed a progressive increase with higher Gd content, while magnetization analysis indicated an enhanced magnetic nature with antiferromagnetic character, highlighting potential applications in electronic technologies, magneto-optical storage systems, and optoelectronic and sensor devices.</description><subject>Antiferromagnetism</subject><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Cubic lattice</subject><subject>Diffraction patterns</subject><subject>Electrochemical analysis</subject><subject>Electrons</subject><subject>Energy gap</subject><subject>Gadolinium</subject><subject>Group theory</subject><subject>Lattice parameters</subject><subject>Machines</subject><subject>Magnetic properties</subject><subject>Magnetization</subject><subject>Manufacturing</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Optical properties</subject><subject>Optoelectronic devices</subject><subject>Oxidation</subject><subject>Pattern analysis</subject><subject>Photoelectrons</subject><subject>Physical properties</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Processes</subject><subject>Reflectance</subject><subject>Solid state</subject><subject>Spectrum analysis</subject><subject>Storage systems</subject><subject>Substitution reactions</subject><subject>Surfaces and Interfaces</subject><subject>Thin Films</subject><subject>Unit cell</subject><subject>X ray photoelectron spectroscopy</subject><subject>X ray powder diffraction</subject><subject>X-ray diffraction</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp9UE1LwzAYDqLgnP4BTwGPrvrmo2nrTYabwmAH5zmkbdpldOlMUsGD_93MCt58D-8HPB-8D0LXBO4IQHbvARgrEqA8gRwITcQJmhDOaAKCwSmaQMGzJGeFOEcX3u8gFqd0gr5e7If2wbQqGNvisNXY7A-qCrhv8LJmt9j0FvuhjJgwhONhLH51dKE3Zi0e4uVNuw0-LqHHe9VaHUw1w7rTVXCmUt0MK1tjH9xQhcGpDh9cf9AuGO0v0VmjOq-vfucUvS2eNvPnZLVevswfV0lFAUJCUiJYXnJgqaKcNTQvs0ZxFltZ07SmohCcpFmmGdFF1qSKA0mBNBmlpMoLNkU3o260fh_iv3LXD85GS8kIhTRlvKARRUdU5XrvnW7kwZm9cp-SgDzGLMeYZYxZ_sQsRSSxkeQj2Lba_Un_w_oGa4V_mw</recordid><startdate>20241101</startdate><enddate>20241101</enddate><creator>Punitha, J. Stella</creator><creator>Raji, Ramesh Kumar</creator><creator>Kumar, K. Saravana</creator><creator>Ramachandran, Tholkappiyan</creator><creator>Hamed, Fathalla</creator><creator>Nataraj, A.</creator><general>Springer Berlin Heidelberg</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0001-6729-5227</orcidid><orcidid>https://orcid.org/0000-0002-4637-0870</orcidid></search><sort><creationdate>20241101</creationdate><title>Investigating the impact of Gd3+ ion substitution in Sr2FeTiO6: insights into magnetic, electrical, and structural properties</title><author>Punitha, J. Stella ; Raji, Ramesh Kumar ; Kumar, K. Saravana ; Ramachandran, Tholkappiyan ; Hamed, Fathalla ; Nataraj, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c200t-151638b4035a243f28b7fa437fabd25d269641577e31e97f5a401501f7221c893</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Antiferromagnetism</topic><topic>Characterization and Evaluation of Materials</topic><topic>Condensed Matter Physics</topic><topic>Cubic lattice</topic><topic>Diffraction patterns</topic><topic>Electrochemical analysis</topic><topic>Electrons</topic><topic>Energy gap</topic><topic>Gadolinium</topic><topic>Group theory</topic><topic>Lattice parameters</topic><topic>Machines</topic><topic>Magnetic properties</topic><topic>Magnetization</topic><topic>Manufacturing</topic><topic>Nanotechnology</topic><topic>Optical and Electronic Materials</topic><topic>Optical properties</topic><topic>Optoelectronic devices</topic><topic>Oxidation</topic><topic>Pattern analysis</topic><topic>Photoelectrons</topic><topic>Physical properties</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Processes</topic><topic>Reflectance</topic><topic>Solid state</topic><topic>Spectrum analysis</topic><topic>Storage systems</topic><topic>Substitution reactions</topic><topic>Surfaces and Interfaces</topic><topic>Thin Films</topic><topic>Unit cell</topic><topic>X ray photoelectron spectroscopy</topic><topic>X ray powder diffraction</topic><topic>X-ray diffraction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Punitha, J. Stella</creatorcontrib><creatorcontrib>Raji, Ramesh Kumar</creatorcontrib><creatorcontrib>Kumar, K. Saravana</creatorcontrib><creatorcontrib>Ramachandran, Tholkappiyan</creatorcontrib><creatorcontrib>Hamed, Fathalla</creatorcontrib><creatorcontrib>Nataraj, A.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Punitha, J. Stella</au><au>Raji, Ramesh Kumar</au><au>Kumar, K. Saravana</au><au>Ramachandran, Tholkappiyan</au><au>Hamed, Fathalla</au><au>Nataraj, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigating the impact of Gd3+ ion substitution in Sr2FeTiO6: insights into magnetic, electrical, and structural properties</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><stitle>Appl. Phys. A</stitle><date>2024-11-01</date><risdate>2024</risdate><volume>130</volume><issue>11</issue><artnum>825</artnum><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>In the present investigations, Gd
3+
ions were substituted at the Sr
2+
site through conventional solid state reaction technique. The influence of Gd
3+
ion substitution on the physical attributes of Sr
2
FeTiO
6
(SFTO) was meticulously examined. The basic structure of Sr
2 − x
Gd
x
FeTiO
6
(SGFTO) (x = 0.2 to 0.8), was employed to start the Rietveld structural refinement of the powder X-ray diffraction patterns. This process confirmed the presence of a cubic structure with a space group of
Pm3m
. The replacement of Gd
3+
ions, noted for their larger ionic radii, led to a minor increase in the lattice parameters and the volume of the unit cell. The identity of the elements within the compound was determined by examining their oxidation states through X-ray photoelectron spectroscopy. The SEM images reveal that as Gd content increases in the SGFTO samples, the structure becomes denser and more agglomerated, with reduced porosity and less uniform particle sizes. This suggests that higher Gd content leads to a more compact morphology, potentially impacting the material’s electrochemical performance and mechanical stability. The use of diffuse reflectance measurements confirmed that the band gap values decreased slightly from 2.95 eV to 2.24 eV for the Sr
2 − x
Gd
x
FeTiO
6
(x = 0.2–0.8) materials, indicating that these synthesized samples exhibit semiconductor nature. The study investigated how often the dielectric constant and its behavior change with temperature, and these measurements proved that as the amount of Gd
3+
in the material increased from 0.2 to 0.8, the dielectric constant also increases. The research on magnetization showed that the prepared materials had a stronger magnetic property and displayed a antiferromagnetic behavior. All synthesized materials made in this way has the possibility to be used in today’s electronic devices, magneto-optical storage devices, and magneto-dielectric technologies.
Highlights
• The study investigates the substitution of Gd
3+
ions at the Sr
2+
site in Sr
2
FeTiO
6
using the solid-state reaction method, examining its impact on the material’s physical properties.
• Rietveld refinement of X-ray diffraction patterns confirmed that Sr
2-x
Gd
x
FeTiO
6
(x = 0.2–0.8) maintains a cubic symmetry with a
Pm3m
space group, with Gd
3+
ion substitution causing a slight increase in lattice parameters and unit cell volume.
• X-ray photoelectron spectroscopy and EDAX pattern analysis confirmed the presence and uniform distribution of Sr, Gd, Fe, Ti and O elements, indicating a homogeneous and uniform structure.
• Diffuse reflectance measurements showed a reduction in band gap values from 2.95 eV to 2.24 eV with increasing Gd
3+
substitution, indicating a semiconductor-like nature of the synthesized samples.
• Dielectric constant measurements revealed a progressive increase with higher Gd content, while magnetization analysis indicated an enhanced magnetic nature with antiferromagnetic character, highlighting potential applications in electronic technologies, magneto-optical storage systems, and optoelectronic and sensor devices.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00339-024-08012-6</doi><orcidid>https://orcid.org/0000-0001-6729-5227</orcidid><orcidid>https://orcid.org/0000-0002-4637-0870</orcidid></addata></record> |
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subjects | Antiferromagnetism Characterization and Evaluation of Materials Condensed Matter Physics Cubic lattice Diffraction patterns Electrochemical analysis Electrons Energy gap Gadolinium Group theory Lattice parameters Machines Magnetic properties Magnetization Manufacturing Nanotechnology Optical and Electronic Materials Optical properties Optoelectronic devices Oxidation Pattern analysis Photoelectrons Physical properties Physics Physics and Astronomy Processes Reflectance Solid state Spectrum analysis Storage systems Substitution reactions Surfaces and Interfaces Thin Films Unit cell X ray photoelectron spectroscopy X ray powder diffraction X-ray diffraction |
title | Investigating the impact of Gd3+ ion substitution in Sr2FeTiO6: insights into magnetic, electrical, and structural properties |
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