Improvement of Contact Resistance and 3D Integration of 2D Material Field‐Effect Transistors Using Semi‐Metallic PtSe2 Contacts

In this work, the potential of 2D semi‐metallic PtSe2 as source/drain (S/D) contacts for 2D material field‐effect‐transistors (FETs) through theoretical and experimental investigations, is explored. From the density functional theory (DFT) calculations, semi‐metallic PtSe2 can inject electrons and h...

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Veröffentlicht in:Advanced functional materials 2024-10, Vol.34 (44), p.n/a
Hauptverfasser: Seo, Jae Eun, Gyeon, Minseung, Seok, Jisoo, Youn, Sukhyeong, Das, Tanmoy, Kwon, Seongdae, Kim, Tae Soo, Lee, Dae Kyu, Kwak, Joon Young, Kang, Kibum, Chang, Jiwon
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Sprache:eng
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