Two-photon absorption in silicon using the real density matrix approach

Two-photon absorption in indirect gap semiconductors is a frequently encountered, but not well-understood phenomenon. To address this, the real-density matrix approach is applied to describe two-photon absorption in silicon through the excitonic response to the interacting fields. This approach prod...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	The Journal of chemical physics 2024-10, Vol.161 (14)
Hauptverfasser:	Ziemkiewicz, David, Knez, David, Garcia, Evan P., Zielińska-Raczyńska, Sylwia, Czajkowski, Gerard, Salandrino, Alessandro, Kharintsev, Sergey S., Noskov, Aleksei I., Potma, Eric O., Fishman, Dmitry A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorptivity Bulk density Photon absorption Photons Silicon
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue	14
container_start_page
container_title	The Journal of chemical physics
container_volume	161
creator	Ziemkiewicz, David Knez, David Garcia, Evan P. Zielińska-Raczyńska, Sylwia Czajkowski, Gerard Salandrino, Alessandro Kharintsev, Sergey S. Noskov, Aleksei I. Potma, Eric O. Fishman, Dmitry A.
description	Two-photon absorption in indirect gap semiconductors is a frequently encountered, but not well-understood phenomenon. To address this, the real-density matrix approach is applied to describe two-photon absorption in silicon through the excitonic response to the interacting fields. This approach produces an analytical expression for the dispersion of the two-photon absorption coefficient for indirect-gap materials and can be used to explain trends in reported experimental data for bulk silicon both old and new with minimal fitting.
doi_str_mv	10.1063/5.0219329
format	Article
fullrecord	<record><control><sourceid>proquest_pubme</sourceid><recordid>TN_cdi_proquest_journals_3115584490</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3115503686</sourcerecordid><originalsourceid>FETCH-LOGICAL-c273t-feb7f2018b6c483c1cbef5868d9ae6511e5e308fca8f3b11834424b1d46f7e403</originalsourceid><addsrcrecordid>eNp9kEFLwzAYhoMobk4P_gEpeFGhM2nSNDnK0CkMvMxzSdPEZbRNTVJ0_96MTg8ePH0vHw_v9_EAcIngHEGK7_M5zBDHGT8CUwQZTwvK4TGYwrhOOYV0As6830IIUZGRUzDBHPMMETwFy_WnTfuNDbZLROWt64OJ0XSJN42RMQ7edO9J2KjEKdEkteq8CbukFcGZr0T0vbNCbs7BiRaNVxeHOQNvT4_rxXO6el2-LB5WqcwKHFKtqkJnELGKSsKwRLJSOmeU1VwomiOkcoUh01IwjSuEGCYkIxWqCdWFIhDPwM3YG89-DMqHsjVeqqYRnbKDLzFCeQ4xZTSi13_QrR1cF78bKUYI3xfejpR01nundNk70wq3KxEs93bLvDzYjezVoXGoWlX_kj86I3A3Al6aIPYm_2n7BjnVgJE</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>3115584490</pqid></control><display><type>article</type><title>Two-photon absorption in silicon using the real density matrix approach</title><source>AIP Journals Complete</source><creator>Ziemkiewicz, David ; Knez, David ; Garcia, Evan P. ; Zielińska-Raczyńska, Sylwia ; Czajkowski, Gerard ; Salandrino, Alessandro ; Kharintsev, Sergey S. ; Noskov, Aleksei I. ; Potma, Eric O. ; Fishman, Dmitry A.</creator><creatorcontrib>Ziemkiewicz, David ; Knez, David ; Garcia, Evan P. ; Zielińska-Raczyńska, Sylwia ; Czajkowski, Gerard ; Salandrino, Alessandro ; Kharintsev, Sergey S. ; Noskov, Aleksei I. ; Potma, Eric O. ; Fishman, Dmitry A.</creatorcontrib><description>Two-photon absorption in indirect gap semiconductors is a frequently encountered, but not well-understood phenomenon. To address this, the real-density matrix approach is applied to describe two-photon absorption in silicon through the excitonic response to the interacting fields. This approach produces an analytical expression for the dispersion of the two-photon absorption coefficient for indirect-gap materials and can be used to explain trends in reported experimental data for bulk silicon both old and new with minimal fitting.</description><identifier>ISSN: 0021-9606</identifier><identifier>ISSN: 1089-7690</identifier><identifier>EISSN: 1089-7690</identifier><identifier>DOI: 10.1063/5.0219329</identifier><identifier>PMID: 39392143</identifier><identifier>CODEN: JCPSA6</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>Absorptivity ; Bulk density ; Photon absorption ; Photons ; Silicon</subject><ispartof>The Journal of chemical physics, 2024-10, Vol.161 (14)</ispartof><rights>Author(s)</rights><rights>2024 Author(s). Published under an exclusive license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c273t-feb7f2018b6c483c1cbef5868d9ae6511e5e308fca8f3b11834424b1d46f7e403</cites><orcidid>0000-0003-3916-6131 ; 0000-0001-6287-2128 ; 0000-0002-7346-9753 ; 0000-0003-0889-2093 ; 0000-0001-9908-2138 ; 0000-0002-5788-3401 ; 0009-0004-6884-0222 ; 0000-0002-3307-882X ; 0000-0002-0346-691X ; 0000-0002-8643-9764</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jcp/article-lookup/doi/10.1063/5.0219329$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,4498,27901,27902,76126</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/39392143$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Ziemkiewicz, David</creatorcontrib><creatorcontrib>Knez, David</creatorcontrib><creatorcontrib>Garcia, Evan P.</creatorcontrib><creatorcontrib>Zielińska-Raczyńska, Sylwia</creatorcontrib><creatorcontrib>Czajkowski, Gerard</creatorcontrib><creatorcontrib>Salandrino, Alessandro</creatorcontrib><creatorcontrib>Kharintsev, Sergey S.</creatorcontrib><creatorcontrib>Noskov, Aleksei I.</creatorcontrib><creatorcontrib>Potma, Eric O.</creatorcontrib><creatorcontrib>Fishman, Dmitry A.</creatorcontrib><title>Two-photon absorption in silicon using the real density matrix approach</title><title>The Journal of chemical physics</title><addtitle>J Chem Phys</addtitle><description>Two-photon absorption in indirect gap semiconductors is a frequently encountered, but not well-understood phenomenon. To address this, the real-density matrix approach is applied to describe two-photon absorption in silicon through the excitonic response to the interacting fields. This approach produces an analytical expression for the dispersion of the two-photon absorption coefficient for indirect-gap materials and can be used to explain trends in reported experimental data for bulk silicon both old and new with minimal fitting.</description><subject>Absorptivity</subject><subject>Bulk density</subject><subject>Photon absorption</subject><subject>Photons</subject><subject>Silicon</subject><issn>0021-9606</issn><issn>1089-7690</issn><issn>1089-7690</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp9kEFLwzAYhoMobk4P_gEpeFGhM2nSNDnK0CkMvMxzSdPEZbRNTVJ0_96MTg8ePH0vHw_v9_EAcIngHEGK7_M5zBDHGT8CUwQZTwvK4TGYwrhOOYV0As6830IIUZGRUzDBHPMMETwFy_WnTfuNDbZLROWt64OJ0XSJN42RMQ7edO9J2KjEKdEkteq8CbukFcGZr0T0vbNCbs7BiRaNVxeHOQNvT4_rxXO6el2-LB5WqcwKHFKtqkJnELGKSsKwRLJSOmeU1VwomiOkcoUh01IwjSuEGCYkIxWqCdWFIhDPwM3YG89-DMqHsjVeqqYRnbKDLzFCeQ4xZTSi13_QrR1cF78bKUYI3xfejpR01nundNk70wq3KxEs93bLvDzYjezVoXGoWlX_kj86I3A3Al6aIPYm_2n7BjnVgJE</recordid><startdate>20241014</startdate><enddate>20241014</enddate><creator>Ziemkiewicz, David</creator><creator>Knez, David</creator><creator>Garcia, Evan P.</creator><creator>Zielińska-Raczyńska, Sylwia</creator><creator>Czajkowski, Gerard</creator><creator>Salandrino, Alessandro</creator><creator>Kharintsev, Sergey S.</creator><creator>Noskov, Aleksei I.</creator><creator>Potma, Eric O.</creator><creator>Fishman, Dmitry A.</creator><general>American Institute of Physics</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0003-3916-6131</orcidid><orcidid>https://orcid.org/0000-0001-6287-2128</orcidid><orcidid>https://orcid.org/0000-0002-7346-9753</orcidid><orcidid>https://orcid.org/0000-0003-0889-2093</orcidid><orcidid>https://orcid.org/0000-0001-9908-2138</orcidid><orcidid>https://orcid.org/0000-0002-5788-3401</orcidid><orcidid>https://orcid.org/0009-0004-6884-0222</orcidid><orcidid>https://orcid.org/0000-0002-3307-882X</orcidid><orcidid>https://orcid.org/0000-0002-0346-691X</orcidid><orcidid>https://orcid.org/0000-0002-8643-9764</orcidid></search><sort><creationdate>20241014</creationdate><title>Two-photon absorption in silicon using the real density matrix approach</title><author>Ziemkiewicz, David ; Knez, David ; Garcia, Evan P. ; Zielińska-Raczyńska, Sylwia ; Czajkowski, Gerard ; Salandrino, Alessandro ; Kharintsev, Sergey S. ; Noskov, Aleksei I. ; Potma, Eric O. ; Fishman, Dmitry A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c273t-feb7f2018b6c483c1cbef5868d9ae6511e5e308fca8f3b11834424b1d46f7e403</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Absorptivity</topic><topic>Bulk density</topic><topic>Photon absorption</topic><topic>Photons</topic><topic>Silicon</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ziemkiewicz, David</creatorcontrib><creatorcontrib>Knez, David</creatorcontrib><creatorcontrib>Garcia, Evan P.</creatorcontrib><creatorcontrib>Zielińska-Raczyńska, Sylwia</creatorcontrib><creatorcontrib>Czajkowski, Gerard</creatorcontrib><creatorcontrib>Salandrino, Alessandro</creatorcontrib><creatorcontrib>Kharintsev, Sergey S.</creatorcontrib><creatorcontrib>Noskov, Aleksei I.</creatorcontrib><creatorcontrib>Potma, Eric O.</creatorcontrib><creatorcontrib>Fishman, Dmitry A.</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><jtitle>The Journal of chemical physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ziemkiewicz, David</au><au>Knez, David</au><au>Garcia, Evan P.</au><au>Zielińska-Raczyńska, Sylwia</au><au>Czajkowski, Gerard</au><au>Salandrino, Alessandro</au><au>Kharintsev, Sergey S.</au><au>Noskov, Aleksei I.</au><au>Potma, Eric O.</au><au>Fishman, Dmitry A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Two-photon absorption in silicon using the real density matrix approach</atitle><jtitle>The Journal of chemical physics</jtitle><addtitle>J Chem Phys</addtitle><date>2024-10-14</date><risdate>2024</risdate><volume>161</volume><issue>14</issue><issn>0021-9606</issn><issn>1089-7690</issn><eissn>1089-7690</eissn><coden>JCPSA6</coden><abstract>Two-photon absorption in indirect gap semiconductors is a frequently encountered, but not well-understood phenomenon. To address this, the real-density matrix approach is applied to describe two-photon absorption in silicon through the excitonic response to the interacting fields. This approach produces an analytical expression for the dispersion of the two-photon absorption coefficient for indirect-gap materials and can be used to explain trends in reported experimental data for bulk silicon both old and new with minimal fitting.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><pmid>39392143</pmid><doi>10.1063/5.0219329</doi><tpages>15</tpages><orcidid>https://orcid.org/0000-0003-3916-6131</orcidid><orcidid>https://orcid.org/0000-0001-6287-2128</orcidid><orcidid>https://orcid.org/0000-0002-7346-9753</orcidid><orcidid>https://orcid.org/0000-0003-0889-2093</orcidid><orcidid>https://orcid.org/0000-0001-9908-2138</orcidid><orcidid>https://orcid.org/0000-0002-5788-3401</orcidid><orcidid>https://orcid.org/0009-0004-6884-0222</orcidid><orcidid>https://orcid.org/0000-0002-3307-882X</orcidid><orcidid>https://orcid.org/0000-0002-0346-691X</orcidid><orcidid>https://orcid.org/0000-0002-8643-9764</orcidid><oa>free_for_read</oa></addata></record>
fulltext	fulltext
identifier	ISSN: 0021-9606
ispartof	The Journal of chemical physics, 2024-10, Vol.161 (14)
issn	0021-9606 1089-7690 1089-7690
language	eng
recordid	cdi_proquest_journals_3115584490
source	AIP Journals Complete
subjects	Absorptivity Bulk density Photon absorption Photons Silicon
title	Two-photon absorption in silicon using the real density matrix approach
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-12T23%3A23%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pubme&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Two-photon%20absorption%20in%20silicon%20using%20the%20real%20density%20matrix%20approach&rft.jtitle=The%20Journal%20of%20chemical%20physics&rft.au=Ziemkiewicz,%20David&rft.date=2024-10-14&rft.volume=161&rft.issue=14&rft.issn=0021-9606&rft.eissn=1089-7690&rft.coden=JCPSA6&rft_id=info:doi/10.1063/5.0219329&rft_dat=%3Cproquest_pubme%3E3115503686%3C/proquest_pubme%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=3115584490&rft_id=info:pmid/39392143&rfr_iscdi=true