Effect of Amorphous Si-Zn-Sn-O Passivation Layer on Si-In-Zn-O Thin Film Transistors
Bi-layer thin film transistors (TFTs) have been fabricated with improved field effect mobility and stability. These TFTs feature a unique channel structure comprising a dielectric layer, an amorphous-Si-In-Zn-O (a-SIZO) layer, and an amorphous-Si-Zn-Sn-O (a-SZTO) layer. Total resistance of the chann...
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| creator | Maurya, Sandeep Kumar Lee, Sang Yeol |
| description | Bi-layer thin film transistors (TFTs) have been fabricated with improved field effect mobility and stability. These TFTs feature a unique channel structure comprising a dielectric layer, an amorphous-Si-In-Zn-O (a-SIZO) layer, and an amorphous-Si-Zn-Sn-O (a-SZTO) layer. Total resistance of the channel and contact resistance between the electrode and channel were determined using transmission line method (TLM). Precisely deposited thin films via RF sputtering at room temperature, our TFTs, equipped with a bottom gate top contact and processed at 500
∘
C, exhibited outstanding characteristics. They showcased high mobilities exceeding 30 cm
2
V
-
1
s
-
1
, a current on/off ratio of approximately 10
9
, and a subthreshold swing (SS) value below 0.45 V decade
-
1
. Furthermore, these bi-layer TFTs demonstrated stability under negative and positive bias stress, indicating their potential for reliable performance across a range of applications and promising advancements in TFT technology. |
| doi_str_mv | 10.1007/s12633-024-03105-6 |
| format | Article |
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∘
C, exhibited outstanding characteristics. They showcased high mobilities exceeding 30 cm
2
V
-
1
s
-
1
, a current on/off ratio of approximately 10
9
, and a subthreshold swing (SS) value below 0.45 V decade
-
1
. Furthermore, these bi-layer TFTs demonstrated stability under negative and positive bias stress, indicating their potential for reliable performance across a range of applications and promising advancements in TFT technology.</description><identifier>ISSN: 1876-990X</identifier><identifier>EISSN: 1876-9918</identifier><identifier>DOI: 10.1007/s12633-024-03105-6</identifier><language>eng</language><publisher>Dordrecht: Springer Netherlands</publisher><subject>Amorphous silicon ; Bilayers ; Chemistry ; Chemistry and Materials Science ; Contact resistance ; Electrodes ; Environmental Chemistry ; Inorganic Chemistry ; Lasers ; Light emitting diodes ; Materials Science ; Optical Devices ; Optics ; Photonics ; Polymer Sciences ; Room temperature ; Semiconductor devices ; Stability ; Thin film transistors ; Thin films ; Transistors ; Transmission lines</subject><ispartof>SILICON, 2024-10, Vol.16 (15), p.5673-5679</ispartof><rights>The Author(s), under exclusive licence to Springer Nature B.V. 2024. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c200t-c5a4805086f9688978c47496d4d184924d7d8cde0ad7d91c9fc1c8f6c2c4a9203</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s12633-024-03105-6$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s12633-024-03105-6$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Maurya, Sandeep Kumar</creatorcontrib><creatorcontrib>Lee, Sang Yeol</creatorcontrib><title>Effect of Amorphous Si-Zn-Sn-O Passivation Layer on Si-In-Zn-O Thin Film Transistors</title><title>SILICON</title><addtitle>Silicon</addtitle><description>Bi-layer thin film transistors (TFTs) have been fabricated with improved field effect mobility and stability. These TFTs feature a unique channel structure comprising a dielectric layer, an amorphous-Si-In-Zn-O (a-SIZO) layer, and an amorphous-Si-Zn-Sn-O (a-SZTO) layer. Total resistance of the channel and contact resistance between the electrode and channel were determined using transmission line method (TLM). Precisely deposited thin films via RF sputtering at room temperature, our TFTs, equipped with a bottom gate top contact and processed at 500
∘
C, exhibited outstanding characteristics. They showcased high mobilities exceeding 30 cm
2
V
-
1
s
-
1
, a current on/off ratio of approximately 10
9
, and a subthreshold swing (SS) value below 0.45 V decade
-
1
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∘
C, exhibited outstanding characteristics. They showcased high mobilities exceeding 30 cm
2
V
-
1
s
-
1
, a current on/off ratio of approximately 10
9
, and a subthreshold swing (SS) value below 0.45 V decade
-
1
. Furthermore, these bi-layer TFTs demonstrated stability under negative and positive bias stress, indicating their potential for reliable performance across a range of applications and promising advancements in TFT technology.</abstract><cop>Dordrecht</cop><pub>Springer Netherlands</pub><doi>10.1007/s12633-024-03105-6</doi><tpages>7</tpages></addata></record> |
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| subjects | Amorphous silicon Bilayers Chemistry Chemistry and Materials Science Contact resistance Electrodes Environmental Chemistry Inorganic Chemistry Lasers Light emitting diodes Materials Science Optical Devices Optics Photonics Polymer Sciences Room temperature Semiconductor devices Stability Thin film transistors Thin films Transistors Transmission lines |
| title | Effect of Amorphous Si-Zn-Sn-O Passivation Layer on Si-In-Zn-O Thin Film Transistors |
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