Reversible Polarity Control in 2D MoTe2 Field‐Effect Transistors for Complementary Logic Gate Applications

Precise control over polarity in field‐effect transistors (FETs) plays a pivotal role in the design and construction of complementary metal–oxide–semiconductor (CMOS) logic circuits. In particular, achieving such precise polarity control in 2D semiconductors is crucial for the further development of...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Advanced functional materials 2024-10, Vol.34 (41), p.n/a
Hauptverfasser:	Yu, Byoung‐Soo, Kim, Wonsik, Jang, Jisu, Lee, Je‐Jun, Hong, Jung Pyo, Kwon, Namhee, Kim, Seunghwan, Ha, Aelim, Kim, Hong‐Kyu, Ahn, Jae‐Pyoung, Jeong, Kwangsik, Taniguchi, Takashi, Watanabe, Kenji, Wang, Gunuk, Ahn, Jongtae, Park, Soohyung, Hwang, Do Kyung
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Carrier density CMOS Density functional theory Field effect transistors field‐effect transistor logic application Logic circuits Molybdenum compounds MoTe2 Photoelectric emission reversible polarity control Tellurides Transistors Voltage gain
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!