Electronic Transport and Interaction of Lattice Dynamics in Topological Nodalline Semimetal HfAs2 Single Crystals

Topological semimetals represent a novel class of quantum materials displaying non‐trivial topological states that host Dirac/Weyl fermions. The intersection of Dirac/Weyl points gives rise to essential properties in a wide range of innovative transport phenomena, including extreme magnetoresistance...

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Veröffentlicht in:Advanced functional materials 2024-10, Vol.34 (41), p.n/a
Hauptverfasser: Muhammad, Zahir, Hussain, Ghulam, Islam, Rajbul, Zawadzka, Natalia, Hossain, Md Shafayat, Iqbal, Obaid, Babiński, Adam, Molas, Maciej R., Xue, Fei, Zhang, Yue, Hasan, M. Zahid, Zhao, Weisheng
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container_issue 41
container_start_page
container_title Advanced functional materials
container_volume 34
creator Muhammad, Zahir
Hussain, Ghulam
Islam, Rajbul
Zawadzka, Natalia
Hossain, Md Shafayat
Iqbal, Obaid
Babiński, Adam
Molas, Maciej R.
Xue, Fei
Zhang, Yue
Hasan, M. Zahid
Zhao, Weisheng
description Topological semimetals represent a novel class of quantum materials displaying non‐trivial topological states that host Dirac/Weyl fermions. The intersection of Dirac/Weyl points gives rise to essential properties in a wide range of innovative transport phenomena, including extreme magnetoresistance, high mobilities, weak antilocalization, electron hydrodynamics, and various electro‐optical phenomena. In this study, the electronic, transport, phonon scattering, and interrelationships are explored in single crystals of the topological semimetal HfAs2. It reveals a weak antilocalization effect at low temperatures with high carrier density, which is attributed to perfectly compensated topological bulk and surface states. The angle‐resolved photoemission spectroscopy (ARPES) results show anisotropic Fermi surfaces and surface states indicative of the topological semimetal, further confirmed by first‐principle density functional theory (DFT) calculations. Moreover, the lattice dynamics in HfAs2 are investigated both with the Raman scattering and density functional theory. The phonon dispersion, density of states, lattice thermal conductivity, and the phonon lifetimes are computed to support the experimental findings. The softening of phonons, the broadening of Raman modes, and the reduction of phonon lifetimes with temperature suggest the enhancement of phonon anharmonicity in this new topological material, which is crucial for boosting the thermoelectric performance of topological semimetals. The newly grown HfAs2 single crystal shows the topological surface states, revealing the new topological semimetals. The transport results indicate the weak antilocalization effect at low temperatures further confirming the strong spin‐orbit coupling and disorder in this topological semimetal. Whereas, the Raman scattering and low lattice thermal conductivity exhibit a role in the disorder, which are further discussed to connect with the transport results in this sample.
doi_str_mv 10.1002/adfm.202316775
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It reveals a weak antilocalization effect at low temperatures with high carrier density, which is attributed to perfectly compensated topological bulk and surface states. The angle‐resolved photoemission spectroscopy (ARPES) results show anisotropic Fermi surfaces and surface states indicative of the topological semimetal, further confirmed by first‐principle density functional theory (DFT) calculations. Moreover, the lattice dynamics in HfAs2 are investigated both with the Raman scattering and density functional theory. The phonon dispersion, density of states, lattice thermal conductivity, and the phonon lifetimes are computed to support the experimental findings. The softening of phonons, the broadening of Raman modes, and the reduction of phonon lifetimes with temperature suggest the enhancement of phonon anharmonicity in this new topological material, which is crucial for boosting the thermoelectric performance of topological semimetals. The newly grown HfAs2 single crystal shows the topological surface states, revealing the new topological semimetals. The transport results indicate the weak antilocalization effect at low temperatures further confirming the strong spin‐orbit coupling and disorder in this topological semimetal. 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The angle‐resolved photoemission spectroscopy (ARPES) results show anisotropic Fermi surfaces and surface states indicative of the topological semimetal, further confirmed by first‐principle density functional theory (DFT) calculations. Moreover, the lattice dynamics in HfAs2 are investigated both with the Raman scattering and density functional theory. The phonon dispersion, density of states, lattice thermal conductivity, and the phonon lifetimes are computed to support the experimental findings. The softening of phonons, the broadening of Raman modes, and the reduction of phonon lifetimes with temperature suggest the enhancement of phonon anharmonicity in this new topological material, which is crucial for boosting the thermoelectric performance of topological semimetals. The newly grown HfAs2 single crystal shows the topological surface states, revealing the new topological semimetals. The transport results indicate the weak antilocalization effect at low temperatures further confirming the strong spin‐orbit coupling and disorder in this topological semimetal. 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subjects Anharmonicity
Bulk density
Carrier density
Crystal lattices
Density functional theory
Electron transport
electronic structures
Fermi surfaces
Fermions
Lattice vibration
Low temperature
Magnetic properties
Magnetoresistance
Magnetoresistivity
Metalloids
Optical properties
phonon dynamics
Phonons
Photoelectric emission
Raman spectra
Single crystals
Thermal conductivity
thermal properties
Thermoelectric materials
topological semimetals
Topology
Transport phenomena
weak antilocalization
title Electronic Transport and Interaction of Lattice Dynamics in Topological Nodalline Semimetal HfAs2 Single Crystals
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