Impact of dark current on pinned photo-diode capacitance of CMOS image sensor in low illumination regime

Applications for quanta and space sensing both depend on efficient low-light imaging. To precisely optimize and design image sensor pixels for these applications, it is crucial to analyze the mechanisms behind dark current generation, considering factors such as temperature, trap cross-section and t...

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Veröffentlicht in:Optoelectronics letters 2024-11, Vol.20 (11), p.654-657
Hauptverfasser: Suharwerdi, Mohsin, Qazi, Gausia
Format: Artikel
Sprache:eng
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