Slotted vertical wall for decoupling and beam tilt correction

An intra-band pattern-corrected decoupling vertical conducting wall is realized by dielectric substrate with conductor cladding on both side wall between two tightly spaced H-plane microstrip patches with λ0/20 edge-to-edge spacing. The wall is grounded and two symmetrical slots are etched on the ve...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:International journal of microwave and wireless technologies 2024-02, Vol.16 (1), p.162-166
Hauptverfasser: Wang, Yiying, Zhang, Shengfei, Wang, Bo, Zhang, Hongxin, Jiang, Yannan, Pan, Wanghua, Kishk, Ahmed A.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!