Slotted vertical wall for decoupling and beam tilt correction
An intra-band pattern-corrected decoupling vertical conducting wall is realized by dielectric substrate with conductor cladding on both side wall between two tightly spaced H-plane microstrip patches with λ0/20 edge-to-edge spacing. The wall is grounded and two symmetrical slots are etched on the ve...
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Veröffentlicht in: | International journal of microwave and wireless technologies 2024-02, Vol.16 (1), p.162-166 |
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Format: | Artikel |
Sprache: | eng |
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