Interfacial band bending and suppressing deep level defects via Eu-MOF-mediated cathode buffer layer in an MA-free inverted perovskite solar cell with high fill factor
Perovskite solar cells (PSCs) utilizing lead halides stand out as promising options within photovoltaic technology, characterized by their remarkable efficiency, cost-effectiveness, and scalable fabrication methodologies, as their efficiency approaches 26.1% in a single junction solar cell. To solve...
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| creator | Imran, Tahir Aziz, Hafiz Sartaj Iftikhar, Tayyaba Ahmad, Munir Xie, Haibing Su, Zhenghua Yan, Peiguang Liu, Zonghao Liang, Guangxing Chen, Wei Chen, Shuo |
| description | Perovskite solar cells (PSCs) utilizing lead halides stand out as promising options within photovoltaic technology, characterized by their remarkable efficiency, cost-effectiveness, and scalable fabrication methodologies, as their efficiency approaches 26.1% in a single junction solar cell. To solve the problem of deep-level surface defects and regulate band alignment at the interfaces, lead thiocyanate (Pb(SCN)
2
) as an additive is utilized in FACsPbI
3
-based PSCs. Additionally, a novel europium metal oxide framework (Eu-MOF) integrated into the buffer layer was demonstrated to partially infiltrate into PCBM, influencing the interfacial band bending. This cathode buffer layer (CBL) enhances electron transport while impeding the hole backflow at the back cathode interface. The Pb(SCN)
2
constituted device with Me-4PACz as the HTL and Eu-MOF modified CBL in the inverted structure boosted the efficiency up to 25.11% with excellent current density and fill factor of 25.85 mA cm
−2
and 85.11%, respectively. The champion device maintained 94% of its initial efficiency after 1000 h aging under a white LED equivalent of 1-sun illumination in ambient air at 65 °C. |
| doi_str_mv | 10.1039/D4EE02894E |
| format | Article |
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2
) as an additive is utilized in FACsPbI
3
-based PSCs. Additionally, a novel europium metal oxide framework (Eu-MOF) integrated into the buffer layer was demonstrated to partially infiltrate into PCBM, influencing the interfacial band bending. This cathode buffer layer (CBL) enhances electron transport while impeding the hole backflow at the back cathode interface. The Pb(SCN)
2
constituted device with Me-4PACz as the HTL and Eu-MOF modified CBL in the inverted structure boosted the efficiency up to 25.11% with excellent current density and fill factor of 25.85 mA cm
−2
and 85.11%, respectively. The champion device maintained 94% of its initial efficiency after 1000 h aging under a white LED equivalent of 1-sun illumination in ambient air at 65 °C.</description><identifier>ISSN: 1754-5692</identifier><identifier>EISSN: 1754-5706</identifier><identifier>DOI: 10.1039/D4EE02894E</identifier><language>eng</language><publisher>Cambridge: Royal Society of Chemistry</publisher><subject>Buffer layers ; Cathodes ; Cost effectiveness ; Efficiency ; Electron transport ; Europium ; Fabrication ; Halides ; Lead ; Lead compounds ; Metal halides ; Metal oxides ; Metal-organic frameworks ; Perovskites ; Photovoltaic cells ; Photovoltaics ; Solar cells ; Surface defects ; Thiocyanates</subject><ispartof>Energy & environmental science, 2024-10, Vol.17 (19), p.7234-7246</ispartof><rights>Copyright Royal Society of Chemistry 2024</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c218t-165a8fa73307ab46fd69c5b96b26510c0bc3f17a07deb459789bc0299e1c7be03</cites><orcidid>0000-0002-8969-8948 ; 0000-0003-1512-376X ; 0000-0002-0657-8423 ; 0000-0002-9033-4885 ; 0000-0003-2137-3933</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Imran, Tahir</creatorcontrib><creatorcontrib>Aziz, Hafiz Sartaj</creatorcontrib><creatorcontrib>Iftikhar, Tayyaba</creatorcontrib><creatorcontrib>Ahmad, Munir</creatorcontrib><creatorcontrib>Xie, Haibing</creatorcontrib><creatorcontrib>Su, Zhenghua</creatorcontrib><creatorcontrib>Yan, Peiguang</creatorcontrib><creatorcontrib>Liu, Zonghao</creatorcontrib><creatorcontrib>Liang, Guangxing</creatorcontrib><creatorcontrib>Chen, Wei</creatorcontrib><creatorcontrib>Chen, Shuo</creatorcontrib><title>Interfacial band bending and suppressing deep level defects via Eu-MOF-mediated cathode buffer layer in an MA-free inverted perovskite solar cell with high fill factor</title><title>Energy & environmental science</title><description>Perovskite solar cells (PSCs) utilizing lead halides stand out as promising options within photovoltaic technology, characterized by their remarkable efficiency, cost-effectiveness, and scalable fabrication methodologies, as their efficiency approaches 26.1% in a single junction solar cell. To solve the problem of deep-level surface defects and regulate band alignment at the interfaces, lead thiocyanate (Pb(SCN)
2
) as an additive is utilized in FACsPbI
3
-based PSCs. Additionally, a novel europium metal oxide framework (Eu-MOF) integrated into the buffer layer was demonstrated to partially infiltrate into PCBM, influencing the interfacial band bending. This cathode buffer layer (CBL) enhances electron transport while impeding the hole backflow at the back cathode interface. The Pb(SCN)
2
constituted device with Me-4PACz as the HTL and Eu-MOF modified CBL in the inverted structure boosted the efficiency up to 25.11% with excellent current density and fill factor of 25.85 mA cm
−2
and 85.11%, respectively. The champion device maintained 94% of its initial efficiency after 1000 h aging under a white LED equivalent of 1-sun illumination in ambient air at 65 °C.</description><subject>Buffer layers</subject><subject>Cathodes</subject><subject>Cost effectiveness</subject><subject>Efficiency</subject><subject>Electron transport</subject><subject>Europium</subject><subject>Fabrication</subject><subject>Halides</subject><subject>Lead</subject><subject>Lead compounds</subject><subject>Metal halides</subject><subject>Metal oxides</subject><subject>Metal-organic frameworks</subject><subject>Perovskites</subject><subject>Photovoltaic cells</subject><subject>Photovoltaics</subject><subject>Solar cells</subject><subject>Surface defects</subject><subject>Thiocyanates</subject><issn>1754-5692</issn><issn>1754-5706</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNpFkV9LwzAUxYMoOKcvfoKAb0I16b80j2N2OnDsRZ9Lkt6smV1bk7SyT-TXtGWKL_eeHxzOvXAQuqXkgZKIPz7FeU7CjMf5GZpRlsRBwkh6_qdTHl6iK-f2hKQhYXyGvteNB6uFMqLGUjQlltCUptnhSbu-6yw4N3EJ0OEaBqhHqUF5hwcjcN4Hm-0qOEBphIcSK-GrtgQse63B4locx2maMQ5vFoG2ACMNYCdvB7Yd3IfxgF1bC4sV1DX-Mr7CldlVWJsRx998a6_RhRa1g5vfPUfvq_xt-RK8bp_Xy8VroEKa-YCmici0YFFEmJBxqsuUq0TyVIZpQokiUkWaMkFYCTJOOMu4VCTkHKhiEkg0R3en3M62nz04X-zb3jbjySKilMZRnLBkdN2fXMq2zlnQRWfNQdhjQUkxFVH8FxH9AAZ5fOk</recordid><startdate>20241001</startdate><enddate>20241001</enddate><creator>Imran, Tahir</creator><creator>Aziz, Hafiz Sartaj</creator><creator>Iftikhar, Tayyaba</creator><creator>Ahmad, Munir</creator><creator>Xie, Haibing</creator><creator>Su, Zhenghua</creator><creator>Yan, Peiguang</creator><creator>Liu, Zonghao</creator><creator>Liang, Guangxing</creator><creator>Chen, Wei</creator><creator>Chen, Shuo</creator><general>Royal Society of Chemistry</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7ST</scope><scope>7TB</scope><scope>8FD</scope><scope>C1K</scope><scope>FR3</scope><scope>L7M</scope><scope>SOI</scope><orcidid>https://orcid.org/0000-0002-8969-8948</orcidid><orcidid>https://orcid.org/0000-0003-1512-376X</orcidid><orcidid>https://orcid.org/0000-0002-0657-8423</orcidid><orcidid>https://orcid.org/0000-0002-9033-4885</orcidid><orcidid>https://orcid.org/0000-0003-2137-3933</orcidid></search><sort><creationdate>20241001</creationdate><title>Interfacial band bending and suppressing deep level defects via Eu-MOF-mediated cathode buffer layer in an MA-free inverted perovskite solar cell with high fill factor</title><author>Imran, Tahir ; Aziz, Hafiz Sartaj ; Iftikhar, Tayyaba ; Ahmad, Munir ; Xie, Haibing ; Su, Zhenghua ; Yan, Peiguang ; Liu, Zonghao ; Liang, Guangxing ; Chen, Wei ; Chen, Shuo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c218t-165a8fa73307ab46fd69c5b96b26510c0bc3f17a07deb459789bc0299e1c7be03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Buffer layers</topic><topic>Cathodes</topic><topic>Cost effectiveness</topic><topic>Efficiency</topic><topic>Electron transport</topic><topic>Europium</topic><topic>Fabrication</topic><topic>Halides</topic><topic>Lead</topic><topic>Lead compounds</topic><topic>Metal halides</topic><topic>Metal oxides</topic><topic>Metal-organic frameworks</topic><topic>Perovskites</topic><topic>Photovoltaic cells</topic><topic>Photovoltaics</topic><topic>Solar cells</topic><topic>Surface defects</topic><topic>Thiocyanates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Imran, Tahir</creatorcontrib><creatorcontrib>Aziz, Hafiz Sartaj</creatorcontrib><creatorcontrib>Iftikhar, Tayyaba</creatorcontrib><creatorcontrib>Ahmad, Munir</creatorcontrib><creatorcontrib>Xie, Haibing</creatorcontrib><creatorcontrib>Su, Zhenghua</creatorcontrib><creatorcontrib>Yan, Peiguang</creatorcontrib><creatorcontrib>Liu, Zonghao</creatorcontrib><creatorcontrib>Liang, Guangxing</creatorcontrib><creatorcontrib>Chen, Wei</creatorcontrib><creatorcontrib>Chen, Shuo</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Environment Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Environment Abstracts</collection><jtitle>Energy & environmental science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Imran, Tahir</au><au>Aziz, Hafiz Sartaj</au><au>Iftikhar, Tayyaba</au><au>Ahmad, Munir</au><au>Xie, Haibing</au><au>Su, Zhenghua</au><au>Yan, Peiguang</au><au>Liu, Zonghao</au><au>Liang, Guangxing</au><au>Chen, Wei</au><au>Chen, Shuo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Interfacial band bending and suppressing deep level defects via Eu-MOF-mediated cathode buffer layer in an MA-free inverted perovskite solar cell with high fill factor</atitle><jtitle>Energy & environmental science</jtitle><date>2024-10-01</date><risdate>2024</risdate><volume>17</volume><issue>19</issue><spage>7234</spage><epage>7246</epage><pages>7234-7246</pages><issn>1754-5692</issn><eissn>1754-5706</eissn><abstract>Perovskite solar cells (PSCs) utilizing lead halides stand out as promising options within photovoltaic technology, characterized by their remarkable efficiency, cost-effectiveness, and scalable fabrication methodologies, as their efficiency approaches 26.1% in a single junction solar cell. To solve the problem of deep-level surface defects and regulate band alignment at the interfaces, lead thiocyanate (Pb(SCN)
2
) as an additive is utilized in FACsPbI
3
-based PSCs. Additionally, a novel europium metal oxide framework (Eu-MOF) integrated into the buffer layer was demonstrated to partially infiltrate into PCBM, influencing the interfacial band bending. This cathode buffer layer (CBL) enhances electron transport while impeding the hole backflow at the back cathode interface. The Pb(SCN)
2
constituted device with Me-4PACz as the HTL and Eu-MOF modified CBL in the inverted structure boosted the efficiency up to 25.11% with excellent current density and fill factor of 25.85 mA cm
−2
and 85.11%, respectively. The champion device maintained 94% of its initial efficiency after 1000 h aging under a white LED equivalent of 1-sun illumination in ambient air at 65 °C.</abstract><cop>Cambridge</cop><pub>Royal Society of Chemistry</pub><doi>10.1039/D4EE02894E</doi><tpages>13</tpages><orcidid>https://orcid.org/0000-0002-8969-8948</orcidid><orcidid>https://orcid.org/0000-0003-1512-376X</orcidid><orcidid>https://orcid.org/0000-0002-0657-8423</orcidid><orcidid>https://orcid.org/0000-0002-9033-4885</orcidid><orcidid>https://orcid.org/0000-0003-2137-3933</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1754-5692 |
| ispartof | Energy & environmental science, 2024-10, Vol.17 (19), p.7234-7246 |
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| language | eng |
| recordid | cdi_proquest_journals_3111434575 |
| source | Royal Society Of Chemistry Journals 2008- |
| subjects | Buffer layers Cathodes Cost effectiveness Efficiency Electron transport Europium Fabrication Halides Lead Lead compounds Metal halides Metal oxides Metal-organic frameworks Perovskites Photovoltaic cells Photovoltaics Solar cells Surface defects Thiocyanates |
| title | Interfacial band bending and suppressing deep level defects via Eu-MOF-mediated cathode buffer layer in an MA-free inverted perovskite solar cell with high fill factor |
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