Control of Surface Chemistry in Recess Etching toward Normally Off GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Reducing off‐state and gate leakage current is crucial in the development of metal–insulator–semiconductor high‐electron‐mobility transistors (MIS‐HEMTs). This work reports interface engineering in the gate recess region through low‐damage digital etching during the fabrication of normally off GaN M...

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Veröffentlicht in:	Physica status solidi. PSS-RRL. Rapid research letters 2024-09, Vol.18 (9), p.n/a
Hauptverfasser:	Luo, Tian, Yu, Zhehan, Dai, Yijun, Chen, Sitong, Ye, Fang, Xu, Wei, Ye, Jichun, Guo, Wei
Format:	Artikel
Sprache:	eng
Schlagworte:	Current leakage digital etching Gallium nitrides gate leakages High electron mobility transistors Leakage current metal–insulator–semiconductor high‐electron‐mobility transistors MIS (semiconductors) normally off Oxidation Plasma etching stoichiometric ratios Threshold voltage
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