Further evaluation of the shape of atomic Hirshfeld surfaces: M…H contacts and homoatomic bonds
It is well known that Hirshfeld surfaces provide an easy and straightforward way of analysing intermolecular interactions in the crystal environment. The use of atomic Hirshfeld surfaces has also demonstrated that such surfaces carry information related to chemical bonds which allow a deeper evaluat...
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Veröffentlicht in: | Acta crystallographica. Section C, Crystal structure communications Crystal structure communications, 2024-09, Vol.80 (9), p.478-486 |
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Sprache: | eng |
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Zusammenfassung: | It is well known that Hirshfeld surfaces provide an easy and straightforward way of analysing intermolecular interactions in the crystal environment. The use of atomic Hirshfeld surfaces has also demonstrated that such surfaces carry information related to chemical bonds which allow a deeper evaluation of the structures. Here we briefly summarize the approach of atomic Hirshfeld surfaces while further evaluating the kind of information that can be retrieved from them. We show that the analysis of the metal‐centre Hirshfeld surfaces from structures refined via Hirshfeld Atom Refinement (HAR) allow accurate evaluation of contacts of type M…H, and that such contacts can be related to the overall shape of the surfaces. The compounds analysed were tetraaquabis(3‐carboxypropionato)metal(II), [M(C4H3O4)2(H2O)4], for metal(II)/M = manganese/Mn, cobalt/Co, nickel/Ni and zinc/Zn. We also evaluate the sensitivity of the surfaces by an investigation of seemingly flat surfaces through analysis of the curvature functions in the direction of C—C bonds. The obtained values not only demonstrate variations in curvature but also show a correlation with the hybridization of the C atoms involved in the bond.
The sensitivity of atomic Hirshfeld surfaces is further validated through the evaluation of contacts of type M…H and through the variations in curvature for C—C bonds depending on the hybridization of the C atoms. |
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ISSN: | 2053-2296 0108-2701 2053-2296 1600-5759 |
DOI: | 10.1107/S2053229624007125 |