Electronic States of the Conduction Band of Ultrathin Furan-Phenylene Co-Oligomer Films on the Surfaces of Oxidized Silicon and Layer-by-Layer Grown Zinc Oxide
The results of studying the electronic states of the conduction band of ultrathin films of furan-phenylene co-oligomer 1,4-bis(5-phenylfuran-2-yl)benzene and the results of analyzing the interfacial potential barrier upon the formation of these films on the surfaces of (SiO 2 ) n -Si and layer-by-la...
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| Veröffentlicht in: | Crystallography reports 2024-08, Vol.69 (4), p.556-560 |
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| creator | Komolov, A. S. Pronin, I. A. Lazneva, E. F. Sobolev, V. S. Dubov, E. A. Komolova, A. A. Zhizhin, E. V. Pudikov, D. A. Pshenichnyuk, S. A. Becker, Ch. S. Kazantsev, M. S. Akbarova, F. Dj Sharopov, U. B. |
| description | The results of studying the electronic states of the conduction band of ultrathin films of furan-phenylene co-oligomer 1,4-bis(5-phenylfuran-2-yl)benzene and the results of analyzing the interfacial potential barrier upon the formation of these films on the surfaces of (SiO
2
)
n
-Si and layer-by-layer deposited ZnO are presented. The formation of a (8–10)-nm-thick co-oligomer film was investigated by total current spectroscopy; the energy range from 5 to 20 eV above
E
F
was analyzed. Furan-phenylene co-oligomer films on the (SiO
2
)
n
-Si surface have a domain structure with a characteristic domain size of ~1 × 1 µm and surface roughness within a domain of no more than 1 nm. The films on the ZnO surface have a granular structure with a grain height of 40–50 nm. |
| doi_str_mv | 10.1134/S1063774524601266 |
| format | Article |
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2
)
n
-Si and layer-by-layer deposited ZnO are presented. The formation of a (8–10)-nm-thick co-oligomer film was investigated by total current spectroscopy; the energy range from 5 to 20 eV above
E
F
was analyzed. Furan-phenylene co-oligomer films on the (SiO
2
)
n
-Si surface have a domain structure with a characteristic domain size of ~1 × 1 µm and surface roughness within a domain of no more than 1 nm. The films on the ZnO surface have a granular structure with a grain height of 40–50 nm.</description><identifier>ISSN: 1063-7745</identifier><identifier>EISSN: 1562-689X</identifier><identifier>DOI: 10.1134/S1063774524601266</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Benzene ; Conduction bands ; Crystallography and Scattering Methods ; Electron states ; Nanomaterials and Ceramics ; Oligomers ; Physics ; Physics and Astronomy ; Silicon dioxide ; Surface roughness ; Thin films ; Zinc oxide</subject><ispartof>Crystallography reports, 2024-08, Vol.69 (4), p.556-560</ispartof><rights>Pleiades Publishing, Inc. 2024. ISSN 1063-7745, Crystallography Reports, 2024, Vol. 69, No. 4, pp. 556–560. © Pleiades Publishing, Inc., 2024.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c198t-afbb769150f55430c8dace0edbc77a339b37eeae95c3885fa48d8bd66248601a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063774524601266$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063774524601266$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Komolov, A. S.</creatorcontrib><creatorcontrib>Pronin, I. A.</creatorcontrib><creatorcontrib>Lazneva, E. F.</creatorcontrib><creatorcontrib>Sobolev, V. S.</creatorcontrib><creatorcontrib>Dubov, E. A.</creatorcontrib><creatorcontrib>Komolova, A. A.</creatorcontrib><creatorcontrib>Zhizhin, E. V.</creatorcontrib><creatorcontrib>Pudikov, D. A.</creatorcontrib><creatorcontrib>Pshenichnyuk, S. A.</creatorcontrib><creatorcontrib>Becker, Ch. S.</creatorcontrib><creatorcontrib>Kazantsev, M. S.</creatorcontrib><creatorcontrib>Akbarova, F. Dj</creatorcontrib><creatorcontrib>Sharopov, U. B.</creatorcontrib><title>Electronic States of the Conduction Band of Ultrathin Furan-Phenylene Co-Oligomer Films on the Surfaces of Oxidized Silicon and Layer-by-Layer Grown Zinc Oxide</title><title>Crystallography reports</title><addtitle>Crystallogr. Rep</addtitle><description>The results of studying the electronic states of the conduction band of ultrathin films of furan-phenylene co-oligomer 1,4-bis(5-phenylfuran-2-yl)benzene and the results of analyzing the interfacial potential barrier upon the formation of these films on the surfaces of (SiO
2
)
n
-Si and layer-by-layer deposited ZnO are presented. The formation of a (8–10)-nm-thick co-oligomer film was investigated by total current spectroscopy; the energy range from 5 to 20 eV above
E
F
was analyzed. Furan-phenylene co-oligomer films on the (SiO
2
)
n
-Si surface have a domain structure with a characteristic domain size of ~1 × 1 µm and surface roughness within a domain of no more than 1 nm. The films on the ZnO surface have a granular structure with a grain height of 40–50 nm.</description><subject>Benzene</subject><subject>Conduction bands</subject><subject>Crystallography and Scattering Methods</subject><subject>Electron states</subject><subject>Nanomaterials and Ceramics</subject><subject>Oligomers</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Silicon dioxide</subject><subject>Surface roughness</subject><subject>Thin films</subject><subject>Zinc oxide</subject><issn>1063-7745</issn><issn>1562-689X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp1kdFKwzAUhosoOKcP4F3A62jStGl6qcNNYTBhDsSbkqanW0aXzDRF58v4qqab4IV4lUPO938HzomiS0quKWXJzZwSzrIsSeOEExpzfhQNaMpjzEX-chzq0MZ9_zQ6a9s1IUQImgyir_sGlHfWaIXmXnpoka2RXwEaWVN1ymtr0J00Vf-9aLyTfqUNGndOGvy0ArNrwPQwnjV6aTfg0Fg3m2Axe8u8c7VUB-vsQ1f6Eyo0141WAei1U7kDh8sd3hdo4uy7Qa_aqD0O59FJLZsWLn7eYbQY3z-PHvB0Nnkc3U6xornwWNZlmfGcpqRO04QRJaowlUBVqiyTjOUlywAk5KliQqS1TEQlyorzOBFhX5INo6uDd-vsWwetL9a2cyaMLBilJKOc5Umg6IFSzratg7rYOr2RbldQUvR3KP7cIWTiQ6YNrFmC-zX_H_oGftuLpA</recordid><startdate>20240801</startdate><enddate>20240801</enddate><creator>Komolov, A. S.</creator><creator>Pronin, I. A.</creator><creator>Lazneva, E. F.</creator><creator>Sobolev, V. S.</creator><creator>Dubov, E. A.</creator><creator>Komolova, A. A.</creator><creator>Zhizhin, E. V.</creator><creator>Pudikov, D. A.</creator><creator>Pshenichnyuk, S. A.</creator><creator>Becker, Ch. S.</creator><creator>Kazantsev, M. S.</creator><creator>Akbarova, F. Dj</creator><creator>Sharopov, U. B.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20240801</creationdate><title>Electronic States of the Conduction Band of Ultrathin Furan-Phenylene Co-Oligomer Films on the Surfaces of Oxidized Silicon and Layer-by-Layer Grown Zinc Oxide</title><author>Komolov, A. S. ; Pronin, I. A. ; Lazneva, E. F. ; Sobolev, V. S. ; Dubov, E. A. ; Komolova, A. A. ; Zhizhin, E. V. ; Pudikov, D. A. ; Pshenichnyuk, S. A. ; Becker, Ch. S. ; Kazantsev, M. S. ; Akbarova, F. Dj ; Sharopov, U. B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c198t-afbb769150f55430c8dace0edbc77a339b37eeae95c3885fa48d8bd66248601a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Benzene</topic><topic>Conduction bands</topic><topic>Crystallography and Scattering Methods</topic><topic>Electron states</topic><topic>Nanomaterials and Ceramics</topic><topic>Oligomers</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Silicon dioxide</topic><topic>Surface roughness</topic><topic>Thin films</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Komolov, A. S.</creatorcontrib><creatorcontrib>Pronin, I. A.</creatorcontrib><creatorcontrib>Lazneva, E. F.</creatorcontrib><creatorcontrib>Sobolev, V. S.</creatorcontrib><creatorcontrib>Dubov, E. A.</creatorcontrib><creatorcontrib>Komolova, A. A.</creatorcontrib><creatorcontrib>Zhizhin, E. V.</creatorcontrib><creatorcontrib>Pudikov, D. A.</creatorcontrib><creatorcontrib>Pshenichnyuk, S. A.</creatorcontrib><creatorcontrib>Becker, Ch. S.</creatorcontrib><creatorcontrib>Kazantsev, M. S.</creatorcontrib><creatorcontrib>Akbarova, F. Dj</creatorcontrib><creatorcontrib>Sharopov, U. B.</creatorcontrib><collection>CrossRef</collection><jtitle>Crystallography reports</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Komolov, A. S.</au><au>Pronin, I. A.</au><au>Lazneva, E. F.</au><au>Sobolev, V. S.</au><au>Dubov, E. A.</au><au>Komolova, A. A.</au><au>Zhizhin, E. V.</au><au>Pudikov, D. A.</au><au>Pshenichnyuk, S. A.</au><au>Becker, Ch. S.</au><au>Kazantsev, M. S.</au><au>Akbarova, F. Dj</au><au>Sharopov, U. B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electronic States of the Conduction Band of Ultrathin Furan-Phenylene Co-Oligomer Films on the Surfaces of Oxidized Silicon and Layer-by-Layer Grown Zinc Oxide</atitle><jtitle>Crystallography reports</jtitle><stitle>Crystallogr. Rep</stitle><date>2024-08-01</date><risdate>2024</risdate><volume>69</volume><issue>4</issue><spage>556</spage><epage>560</epage><pages>556-560</pages><issn>1063-7745</issn><eissn>1562-689X</eissn><abstract>The results of studying the electronic states of the conduction band of ultrathin films of furan-phenylene co-oligomer 1,4-bis(5-phenylfuran-2-yl)benzene and the results of analyzing the interfacial potential barrier upon the formation of these films on the surfaces of (SiO
2
)
n
-Si and layer-by-layer deposited ZnO are presented. The formation of a (8–10)-nm-thick co-oligomer film was investigated by total current spectroscopy; the energy range from 5 to 20 eV above
E
F
was analyzed. Furan-phenylene co-oligomer films on the (SiO
2
)
n
-Si surface have a domain structure with a characteristic domain size of ~1 × 1 µm and surface roughness within a domain of no more than 1 nm. The films on the ZnO surface have a granular structure with a grain height of 40–50 nm.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063774524601266</doi><tpages>5</tpages></addata></record> |
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| subjects | Benzene Conduction bands Crystallography and Scattering Methods Electron states Nanomaterials and Ceramics Oligomers Physics Physics and Astronomy Silicon dioxide Surface roughness Thin films Zinc oxide |
| title | Electronic States of the Conduction Band of Ultrathin Furan-Phenylene Co-Oligomer Films on the Surfaces of Oxidized Silicon and Layer-by-Layer Grown Zinc Oxide |
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