High-performance diamond radiation detectors produced by lift-off method
For stable semiconductor detector operation under harsh environments, an ideal single-crystal diamond without a charge trapping centre is required. For this study, a self-standing single-crystal CVD diamond was fabricated using a lift-off method. The reduction of charge trapping factors such as stru...
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| Veröffentlicht in: | Europhysics letters 2016-03, Vol.113 (6), p.62001-62001 |
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| container_end_page | 62001 |
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| container_issue | 6 |
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| container_title | Europhysics letters |
| container_volume | 113 |
| creator | Shimaoka, Takehiro Kaneko, Junichi H. Tsubota, Masakatsu Shimmyo, Hiroaki Watanabe, Hideyuki Chayahara, Akiyoshi Umezawa, Hitoshi Shikata, Shin-ichi |
| description | For stable semiconductor detector operation under harsh environments, an ideal single-crystal diamond without a charge trapping centre is required. For this study, a self-standing single-crystal CVD diamond was fabricated using a lift-off method. The reduction of charge trapping factors such as structural defects, point defects, and nitrogen impurities, was attempted using 0.2% of low-methane concentration growth and using a full metal seal chamber. A high-quality self-standing diamond with strong free-exciton recombination emission was obtained. Charge collection efficiencies were 100.1% for holes and 99.8% for electrons, provided that and . Energy resolutions were 0.38% for both holes and electrons. We produced a high-performance diamond radiation detector using the productive lift-off method. |
| doi_str_mv | 10.1209/0295-5075/113/62001 |
| format | Article |
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For this study, a self-standing single-crystal CVD diamond was fabricated using a lift-off method. The reduction of charge trapping factors such as structural defects, point defects, and nitrogen impurities, was attempted using 0.2% of low-methane concentration growth and using a full metal seal chamber. A high-quality self-standing diamond with strong free-exciton recombination emission was obtained. Charge collection efficiencies were 100.1% for holes and 99.8% for electrons, provided that and . Energy resolutions were 0.38% for both holes and electrons. 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| ispartof | Europhysics letters, 2016-03, Vol.113 (6), p.62001-62001 |
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| source | IOP Publishing Journals |
| subjects | 29.40.Wk 81.05.ug Chambers Charge Charge efficiency Crystal defects Diamonds Electrons Excitons Nitrogen Point defects Radiation detectors Semiconductors Single crystals Trapping |
| title | High-performance diamond radiation detectors produced by lift-off method |
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